MX167380B - Un metodo para sintetizar compuestos amorfos del grupo iiia-grupo va - Google Patents

Un metodo para sintetizar compuestos amorfos del grupo iiia-grupo va

Info

Publication number
MX167380B
MX167380B MX012229A MX1222988A MX167380B MX 167380 B MX167380 B MX 167380B MX 012229 A MX012229 A MX 012229A MX 1222988 A MX1222988 A MX 1222988A MX 167380 B MX167380 B MX 167380B
Authority
MX
Mexico
Prior art keywords
group
mixtures
iiia
general formula
equal
Prior art date
Application number
MX012229A
Other languages
English (en)
Inventor
Lawrence Daniel David
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of MX167380B publication Critical patent/MX167380B/es

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/0632—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/08—Other phosphides
    • C01B25/082—Other phosphides of boron, aluminium, gallium or indium
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/66—Arsenic compounds
    • C07F9/68—Arsenic compounds without As—C bonds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/90—Antimony compounds
    • C07F9/902—Compounds without antimony-carbon linkages
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/007—Preparing arsenides or antimonides, especially of the III-VI-compound type, e.g. aluminium or gallium arsenide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/02—Amorphous compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Catalysts (AREA)

Abstract

La presente invención se refiere a un método para sintetizar compuestos amorfos del Grupo IIIA-Grupo VA, el cual comprende las etapas de: a) mezclar cantidades equimolares de un derivado de tris (trialquilsililo) de un elemento del Grupo IIIA, con un haluro de un elemento del Grupo VA, en un sistema de solvente orgánico, caracterizado porque el elemento del Grupo IIIA es seleccionado del grupo que consiste en aluminio, boro, galio, indio y las mezclas de los mismos, y el elemento del Grupo VA es seleccionado del grupo que consiste en antimonio, arsénico, nitrógeno, fósforo y las mezclas de los mismos, b) hacer reaccionar los componentes de la mezcla de la etapa (a) para formar un aducto de la fórmula general: donde R es igual a un grupo alquilo; A es igual a aluminio, boro, galio, indio, las mezclas de los mismos; B es igual a antimonio, arsénico, nitrógeno, fósforo, o las mezclas de los mismos; y X es igual a bromo, cloro, flúor, o iodo y posteriormente a lo cual se forma un compuesto del Grupo IIIA-Grupo VA, teniendo la fórmula general AB y un subproducto de haluro que tiene la fórmula general R3SiX; y c) remover el subproducto de R3SiX para formar la fase condensada estequiométrica de AB.
MX012229A 1987-07-13 1988-07-12 Un metodo para sintetizar compuestos amorfos del grupo iiia-grupo va MX167380B (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/072,486 US4798701A (en) 1987-07-13 1987-07-13 Method of synthesizing amorphous group IIIA-group VA compounds

Publications (1)

Publication Number Publication Date
MX167380B true MX167380B (es) 1993-03-19

Family

ID=22107911

Family Applications (1)

Application Number Title Priority Date Filing Date
MX012229A MX167380B (es) 1987-07-13 1988-07-12 Un metodo para sintetizar compuestos amorfos del grupo iiia-grupo va

Country Status (7)

Country Link
US (1) US4798701A (es)
EP (1) EP0299212A3 (es)
JP (1) JPS6424006A (es)
AU (1) AU607236B2 (es)
BR (1) BR8803503A (es)
CA (1) CA1280873C (es)
MX (1) MX167380B (es)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4980490A (en) * 1987-11-03 1990-12-25 Cornell Research Foundation, Inc. [R(Cl)GaAs(SiR'3)2 ]n
US4902486A (en) * 1987-11-03 1990-02-20 Cornell Research Foundation, Inc. Novel gallium arsenide precursor and low temperature method of preparing gallium arsenide therefrom
US5505928A (en) * 1991-11-22 1996-04-09 The Regents Of University Of California Preparation of III-V semiconductor nanocrystals
US5474591A (en) * 1994-01-31 1995-12-12 Duke University Method of synthesizing III-V semiconductor nanocrystals
US6607829B1 (en) 1997-11-13 2003-08-19 Massachusetts Institute Of Technology Tellurium-containing nanocrystalline materials
US6207392B1 (en) * 1997-11-25 2001-03-27 The Regents Of The University Of California Semiconductor nanocrystal probes for biological applications and process for making and using such probes
WO2001033643A1 (en) 1999-10-29 2001-05-10 Ohio University BAND GAP ENGINEERING OF AMORPHOUS Al-Ga-N ALLOYS
WO2001091451A2 (en) 2000-05-23 2001-11-29 Ohio University Amorphous aluminum nitride emitter
JP2005097022A (ja) * 2003-09-22 2005-04-14 Japan Science & Technology Agency Ｉｉｉｂ族窒化物の合成方法
US8134175B2 (en) * 2005-01-11 2012-03-13 Massachusetts Institute Of Technology Nanocrystals including III-V semiconductors
US7641880B2 (en) * 2006-05-03 2010-01-05 Ohio University Room temperature synthesis of GaN nanopowder
EP2038456B1 (en) * 2006-06-09 2014-03-05 Soitec System and process for high volume deposition of gallium nitride
WO2008133660A2 (en) 2006-11-21 2008-11-06 Qd Vision, Inc. Nanocrystals including a group iiia element and a group va element, method, composition, device and other prodcucts
WO2008064077A2 (en) * 2006-11-22 2008-05-29 S.O.I.Tec Silicon On Insulator Technologies Methods for high volume manufacture of group iii-v semiconductor materials
KR101330156B1 (ko) 2006-11-22 2013-12-20 소이텍 삼염화 갈륨 주입 구조
US9481943B2 (en) 2006-11-22 2016-11-01 Soitec Gallium trichloride injection scheme
US9580836B2 (en) 2006-11-22 2017-02-28 Soitec Equipment for high volume manufacture of group III-V semiconductor materials
JP5244814B2 (ja) 2006-11-22 2013-07-24 ソイテック 化学気相成長チャンバ用の温度制御されたパージゲート弁を使用した方法、アセンブリ及びシステム
US9481944B2 (en) 2006-11-22 2016-11-01 Soitec Gas injectors including a funnel- or wedge-shaped channel for chemical vapor deposition (CVD) systems and CVD systems with the same
ATE546570T1 (de) 2006-11-22 2012-03-15 Soitec Silicon On Insulator Verfahren zur epitaktischen abscheidung von einkristallinen iii-v halbleitermaterial
WO2008064085A2 (en) * 2006-11-22 2008-05-29 S.O.I.Tec Silicon On Insulator Technologies Abatement system for gallium nitride reactor exhaust gases
WO2008064080A1 (en) * 2006-11-22 2008-05-29 S.O.I.Tec Silicon On Insulator Technologies High volume delivery system for gallium trichloride
EP2231898A2 (en) * 2007-12-20 2010-09-29 S.O.I.Tec Silicon on Insulator Technologies Methods for in-situ chamber cleaning process for high volume manufacture of semiconductor materials
FR2969137B1 (fr) * 2010-12-17 2015-01-02 Centre Nat Rech Scient Procede de preparation d'une composition de particules mixtes contenant des elements des colonnes 13 et 15

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU570239A1 (ru) * 1976-02-12 1979-02-10 Институт химии АН СССР "Способ получени кристаллических соединений а1у ву14
FR2403646A1 (fr) * 1977-09-16 1979-04-13 Anvar Procede de realisation d'un depot de compose semi-conducteur d'elements iii et v
US4230205A (en) * 1978-05-10 1980-10-28 Westinghouse Electric Corp. Elevator system
US4312970A (en) * 1981-02-20 1982-01-26 Dow Corning Corporation Silazane polymers from {R'3 Si}2 NH and organochlorosilanes
US4482669A (en) * 1984-01-19 1984-11-13 Massachusetts Institute Of Technology Preceramic organosilazane polymers
US4611035A (en) * 1984-02-10 1986-09-09 Minnesota Mining And Manufacturing Company Polyhydridosilanes and their conversion to pyropolymers
US4704444A (en) * 1984-02-10 1987-11-03 Minnesota Mining And Manufacturing Company Polyhydridosilanes and their conversion to pyropolymers
US4594264A (en) * 1984-11-20 1986-06-10 Hughes Aircraft Company Method for forming gallium arsenide from thin solid films of gallium-arsenic complexes

Also Published As

Publication number Publication date
BR8803503A (pt) 1989-01-31
AU607236B2 (en) 1991-02-28
US4798701A (en) 1989-01-17
CA1280873C (en) 1991-03-05
EP0299212A2 (en) 1989-01-18
JPH0474282B2 (es) 1992-11-25
AU1893288A (en) 1989-01-19
EP0299212A3 (en) 1990-11-07
JPS6424006A (en) 1989-01-26

Similar Documents

Publication Publication Date Title
MX167380B (es) Un metodo para sintetizar compuestos amorfos del grupo iiia-grupo va
Musalov et al. Stereoselective synthesis of (E, E)-bis (2-halovinyl) selenides and its derivatives based on selenium halides and acetylene
JP4524186B2 (ja) アリールアミンの製造方法
Sedenkova et al. Nitronium salts as novel reagents for the heterocyclization of gem-bromofluorocyclopropanes into pyrimidine derivatives
Isagawa et al. Catalysis by certain amines in an aqueous phase. Preparation of dichlorocyclopropane derivatives
ES8306751A1 (es) Un procedimiento para la preparacion de 2-guanidino-4-heteroariltiazoles.
Yang et al. Clean and economic synthesis of alkanesulfonyl chlorides from S-alkyl isothiourea salts via bleach oxidative chlorosulfonation
DK1194397T3 (da) Fremgangsmåde til fremstilling af (nitroxymethyl)phenylestere af salicylderivater
US2921955A (en) Carbonate derivatives of ethanolamines
KR950000718A (ko) 설폰화 아릴포스핀의 제조방법
KR960010667A (ko) 설폰화 포스핀, 이의 제조방법 및 촉매계 성분으로서의 이의 용도
US3758580A (en) Separation of tertiary chelating polyamines
De Ketelaere et al. Organo-group vb chemistry I. Synthesis and nmr spectra of some tertiary substituted arylarsines and arsine oxides
Kirsch et al. Imidyl radicals. 2. Radical Addition of N‐Chlorophthalimide and N‐Bromophthalimide to Alkenes
GB1113578A (en) Method of producing tertiary phosphines
Muathen Pyridinium dichlorobromate: A new stable brominating agent for aromatic compounds
KR930007960A (ko) 알릴포스핀 또는 비닐포스핀의 제조 방법
Beard et al. Reactions of dichlorine heptoxide with amines
ATE2612T1 (de) Verfahren zur reinigung von nassverfahrensphosphorsaeure.
Muylle et al. NMR study of donor-acceptor complexes—I. Proton magnetic resonance of substituted aryl-phosphorus compounds and their boronhalide complexes
Caminade et al. Ozonization: an efficient method for the oxidation of halophosphines
KR830001969A (ko) 할로겐화 화합물의 안정화 방법
GB937571A (en) Improvements in or relating to circuit elements
US4476059A (en) Chloroacetonitrile synthesis
US3162686A (en) Preparation of lower tetraalkyl quaternary ammonium nitrates