MD827Z - Method for producing monocrystalline bismuth-stibium semiconductors - Google Patents
Method for producing monocrystalline bismuth-stibium semiconductorsInfo
- Publication number
- MD827Z MD827Z MDS20130078A MDS20130078A MD827Z MD 827 Z MD827 Z MD 827Z MD S20130078 A MDS20130078 A MD S20130078A MD S20130078 A MDS20130078 A MD S20130078A MD 827 Z MD827 Z MD 827Z
- Authority
- MD
- Moldova
- Prior art keywords
- stibium
- semiconductors
- producing monocrystalline
- bismuth
- monocrystalline
- Prior art date
Links
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
The invention relates to the semiconductor production technology, in particular to methods for producing monocrystalline semiconductors from semimetals.The method for producing monocrystalline Bi-Sb semiconductors comprises the smooth elastic extension of a monocrystalline semimetallic bismuth-stibium wire with the stibium concentration of 25 at. % using an extension device with simultaneous measurement of wire electrical resistance at room temperature to the attainment of plastic extension.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDS20130078A MD827Z (en) | 2013-05-02 | 2013-05-02 | Method for producing monocrystalline bismuth-stibium semiconductors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDS20130078A MD827Z (en) | 2013-05-02 | 2013-05-02 | Method for producing monocrystalline bismuth-stibium semiconductors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MD827Y MD827Y (en) | 2014-10-31 |
| MD827Z true MD827Z (en) | 2015-05-31 |
Family
ID=51867924
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MDS20130078A MD827Z (en) | 2013-05-02 | 2013-05-02 | Method for producing monocrystalline bismuth-stibium semiconductors |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD827Z (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD1172Z (en) * | 2016-11-17 | 2018-02-28 | ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ | Process for producing a single-crystal bismuth-antimony semiconductor with zero forbidden energy band width |
| MD1173Z (en) * | 2016-11-17 | 2018-02-28 | ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ | Process for producing a single-crystal bismuth-antimony semiconductor with zero forbidden energy band width |
-
2013
- 2013-05-02 MD MDS20130078A patent/MD827Z/en not_active IP Right Cessation
Non-Patent Citations (3)
| Title |
|---|
| Gitsu D.V., Huber T.E., Konopko L.A. and Nikolaeva A.A. Size Effects in Quantum Single Crystal Bismuth Wires in Glass Cove /Journal of Nanoelectronics and Optoelectronics, 2009, Vol. 4, Nr. 1, p. 49-51 * |
| Golin S. Band model for bismuth-antimony, Physical Review, vol. 176, 1968, p. 830-832 * |
| Попов И. А., Бодюл П. П., Молошник Е. Ф., Ботнарь О. Повышение термоэлектрической добротности тонких нитей Bi1–хSbх при упругом растяжении в магнитном поле, Термоэлектричество №2, 2008, р. 38-47 * |
Also Published As
| Publication number | Publication date |
|---|---|
| MD827Y (en) | 2014-10-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG9Y | Short term patent issued | ||
| KA4Y | Short-term patent lapsed due to non-payment of fees (with right of restoration) |