MD827Z - Procedeu de obţinere a semiconductorilor monocristalini de bismut-stibiu - Google Patents

Procedeu de obţinere a semiconductorilor monocristalini de bismut-stibiu

Info

Publication number
MD827Z
MD827Z MDS20130078A MDS20130078A MD827Z MD 827 Z MD827 Z MD 827Z MD S20130078 A MDS20130078 A MD S20130078A MD S20130078 A MDS20130078 A MD S20130078A MD 827 Z MD827 Z MD 827Z
Authority
MD
Moldova
Prior art keywords
stibium
semiconductors
producing monocrystalline
bismuth
monocrystalline
Prior art date
Application number
MDS20130078A
Other languages
English (en)
Russian (ru)
Inventor
Альбина НИКОЛАЕВА
Павел БОДЮЛ
Леонид КОНОПКО
Ион ПОПОВ
Евгений МОЛОШНИК
Original Assignee
ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ
Институт Прикладной Физики Академии Наук Молдовы
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ, Институт Прикладной Физики Академии Наук Молдовы filed Critical ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ
Priority to MDS20130078A priority Critical patent/MD827Z/ro
Publication of MD827Y publication Critical patent/MD827Y/ro
Publication of MD827Z publication Critical patent/MD827Z/ro

Links

Landscapes

  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

Invenţia se referă la tehnologia de obţinere a semiconductorilor, în special la procedee de obţinere a semiconductorilor monocristalini din semimetale.Procedeul de obţinere a semiconductorilor monocristalini de Bi-Sb include întinderea elastică lină a unui fir monocristalin semimetalic de bismut-stibiu cu concentraţia stibiului de 25% at. cu ajutorul unui dispozitiv de întindere cu măsurarea concomitentă a rezistenţei electrice a firului la temperatura camerei până la atingerea întinderii plastice.
MDS20130078A 2013-05-02 2013-05-02 Procedeu de obţinere a semiconductorilor monocristalini de bismut-stibiu MD827Z (ro)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDS20130078A MD827Z (ro) 2013-05-02 2013-05-02 Procedeu de obţinere a semiconductorilor monocristalini de bismut-stibiu

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDS20130078A MD827Z (ro) 2013-05-02 2013-05-02 Procedeu de obţinere a semiconductorilor monocristalini de bismut-stibiu

Publications (2)

Publication Number Publication Date
MD827Y MD827Y (en) 2014-10-31
MD827Z true MD827Z (ro) 2015-05-31

Family

ID=51867924

Family Applications (1)

Application Number Title Priority Date Filing Date
MDS20130078A MD827Z (ro) 2013-05-02 2013-05-02 Procedeu de obţinere a semiconductorilor monocristalini de bismut-stibiu

Country Status (1)

Country Link
MD (1) MD827Z (ro)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD1173Z (ro) * 2016-11-17 2018-02-28 ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ Procedeu de obţinere a semiconductorului monocristalin de bismut-stibiu cu lăţimea benzii energetice interzise nulă
MD1172Z (ro) * 2016-11-17 2018-02-28 ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ Procedeu de obţinere a semiconductorului monocristalin de bismut-stibiu cu lăţimea benzii energetice interzise nulă
  • 2013

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Gitsu D.V., Huber T.E., Konopko L.A. and Nikolaeva A.A. Size Effects in Quantum Single Crystal Bismuth Wires in Glass Cove /Journal of Nanoelectronics and Optoelectronics, 2009, Vol. 4, Nr. 1, p. 49-51 *
Golin S. Band model for bismuth-antimony, Physical Review, vol. 176, 1968, p. 830-832 *
Попов И. А., Бодюл П. П., Молошник Е. Ф., Ботнарь О. Повышение термоэлектрической добротности тонких нитей Bi1–хSbх при упругом растяжении в магнитном поле, Термоэлектричество №2, 2008, р. 38-47 *

Also Published As

Publication number Publication date
MD827Y (en) 2014-10-31

Similar Documents

Publication Publication Date Title
GB2530195B (en) Selective epitaxially grown III-V materials based devices
EP2991129A4 (en) METHOD OF MANUFACTURING ORGANIC SEMICONDUCTOR THIN LAYER
EP2985614A4 (en) METHOD OF MANUFACTURING A SEMICONDUCTOR COMPONENT
EP2966702A4 (en) METHOD OF MANUFACTURING ORGANIC SEMICONDUCTOR THIN LAYER
EP3043355A4 (en) Flat electric wire, manufacturing method thereof, and electric device
EP3007221A4 (en) WIRING BOARD WITH THROUGH ELECTRODE, PRODUCTION METHOD THEREOF, AND SEMICONDUCTOR DEVICE
PL2994946T3 (pl) Sposób wytwarzania fotowoltaicznego urządzenia przy pomocy perowskitów
EP3007237A4 (en) LED PATTERN WAFER, EPITAKTIC WAFER WITH LEDS, AND METHOD OF PRODUCTION OF THE EPITACTIC WAFER WITH LEDS
EP3067920A4 (en) Semiconductor device and method for producing same
EP2955762A4 (en) LIGHT-EMITTING SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD
SG11201506429SA (en) Epitaxial silicon wafer and method for manufacturing same
EP3010037A4 (en) Silicon carbide semiconductor device manufacturing method
EP3018699A4 (en) Impurity-diffusing composition and method for producing semiconductor element
EP2837021A4 (en) MANUFACTURING A SEMICONDUCTOR DEVICE
EP3043356A4 (en) Flat electric wire, manufacturing method thereof, and electric device
EP2919273A4 (en) METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT
EP2966674A4 (en) METHOD FOR PRODUCING A SILICON CARBIDE SEMICONDUCTOR COMPONENT
EP3024018A4 (en) Semiconductor device, and method for manufacturing same
SG11201508619VA (en) Silicon wafer for solar cells and method for producing same
EP2905806A4 (en) METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH SILICON CARBIDE
MD827Z (ro) Procedeu de obţinere a semiconductorilor monocristalini de bismut-stibiu
EP3043359A4 (en) Superconducting wire material substrate, production method therefor, and superconducting wire material
MD886Z (ro) Procedeu de obţinere a semimetalelor monocristaline de bismut-stibiu
EP2894640A4 (en) TRANSPARENT CONNECTORS AND P-DOTING METHOD THEREFOR
EP2947690A4 (en) SILICON CARBIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR

Legal Events

Date Code Title Description
FG9Y Short term patent issued
KA4Y Short-term patent lapsed due to non-payment of fees (with right of restoration)