MD886Z - Process for producing bismuth-antimony single-crystal semimetals - Google Patents

Process for producing bismuth-antimony single-crystal semimetals

Info

Publication number
MD886Z
MD886Z MDS20130055A MDS20130055A MD886Z MD 886 Z MD886 Z MD 886Z MD S20130055 A MDS20130055 A MD S20130055A MD S20130055 A MDS20130055 A MD S20130055A MD 886 Z MD886 Z MD 886Z
Authority
MD
Moldova
Prior art keywords
crystal
semimetals
antimony
bismuth
producing
Prior art date
Application number
MDS20130055A
Other languages
Romanian (ro)
Russian (ru)
Inventor
Альбина НИКОЛАЕВА
Павел БОДЮЛ
Леонид КОНОПКО
Ион ПОПОВ
Евгений МОЛОШНИК
Original Assignee
ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ filed Critical ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ
Priority to MDS20130055A priority Critical patent/MD886Z/en
Publication of MD886Y publication Critical patent/MD886Y/en
Publication of MD886Z publication Critical patent/MD886Z/en

Links

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention relates to the semimetal production technology, in particular to processes for producing single-crystal semimetals from semiconductors.The process for producing bismuth-antimony single-crystal semimetals comprises the smooth elastic extension of a bismuth-antimony single-crystal semiconductor wire with the antimony concentration of 7.5 at. % using an extension device, while concomitantly measuring the electrical resistance of the wire at the room temperature to the attainment of plastic extension.
MDS20130055A 2013-03-21 2013-03-21 Process for producing bismuth-antimony single-crystal semimetals MD886Z (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDS20130055A MD886Z (en) 2013-03-21 2013-03-21 Process for producing bismuth-antimony single-crystal semimetals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDS20130055A MD886Z (en) 2013-03-21 2013-03-21 Process for producing bismuth-antimony single-crystal semimetals

Publications (2)

Publication Number Publication Date
MD886Y MD886Y (en) 2015-02-28
MD886Z true MD886Z (en) 2015-09-30

Family

ID=52580538

Family Applications (1)

Application Number Title Priority Date Filing Date
MDS20130055A MD886Z (en) 2013-03-21 2013-03-21 Process for producing bismuth-antimony single-crystal semimetals

Country Status (1)

Country Link
MD (1) MD886Z (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD1172Z (en) * 2016-11-17 2018-02-28 ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ Process for producing a single-crystal bismuth-antimony semiconductor with zero forbidden energy band width
MD1173Z (en) * 2016-11-17 2018-02-28 ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ Process for producing a single-crystal bismuth-antimony semiconductor with zero forbidden energy band width
  • 2013

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Gitsu D.V., Huber T.E., Konopko L.A. and Nikolaeva A.A. Size Effects in Quantum Single Crystal Bismuth Wires in Glass Cove /Journal of Nanoelectronics and Optoelectronics, 2009, Vol. 4, Nr. 1, p. 49-51 *
Golin S. Band model for bismuth-antimony, Physical Review, vol. 176, 1968, p. 830-832 *
Попов И. А., Бодюл П. П., Молошник Е. Ф., Ботнарь О. Повышение термоэлектрической добротности тонких нитей Bi1-хSbх при упругом растяжении в магнитном поле, Термоэлектричество, №2, 2008, р. 38-47 *

Also Published As

Publication number Publication date
MD886Y (en) 2015-02-28

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Legal Events

Date Code Title Description
FG9Y Short term patent issued
KA4Y Short-term patent lapsed due to non-payment of fees (with right of restoration)