ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ
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Priority to MDS20130055ApriorityCriticalpatent/MD886Z/en
Publication of MD886YpublicationCriticalpatent/MD886Y/en
Publication of MD886ZpublicationCriticalpatent/MD886Z/en
The invention relates to the semimetal production technology, in particular to processes for producing single-crystal semimetals from semiconductors.The process for producing bismuth-antimony single-crystal semimetals comprises the smooth elastic extension of a bismuth-antimony single-crystal semiconductor wire with the antimony concentration of 7.5 at. % using an extension device, while concomitantly measuring the electrical resistance of the wire at the room temperature to the attainment of plastic extension.
MDS20130055A2013-03-212013-03-21Process for producing bismuth-antimony single-crystal semimetals
MD886Z
(en)
ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ
Process for producing a single-crystal bismuth-antimony semiconductor with zero forbidden energy band width
2013
2013-03-21MDMDS20130055Apatent/MD886Z/ennot_activeIP Right Cessation
Non-Patent Citations (3)
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Golin S. Band model for bismuth-antimony, Physical Review, vol. 176, 1968, p. 830-832*
Попов И. А., Бодюл П. П., Молошник Е. Ф., Ботнарь О. Повышение термоэлектрической добротности тонких нитей Bi1-хSbх при упругом растяжении в магнитном поле, Термоэлектричество, №2, 2008, р. 38-47*
Heat-resistant, silane-crosslinked resin molded article and production method for same, heat-resistant, silane-crosslinkable resin composition and production method for same, silane masterbatch, and heat-resistant product employing heat-resistant, silane-crosslinked resin molded article
Heat-resistant, silane-crosslinked resin molded article and production method for same, heat-resistant, silane-crosslinkable resin composition and production method for same, silane masterbatch, and heat-resistant product employing heat-resistant, silane-crosslinked resin molded article