MD4552B1 - Process for producing tantalum or niobium arsenide single crystals - Google Patents
Process for producing tantalum or niobium arsenide single crystalsInfo
- Publication number
- MD4552B1 MD4552B1 MDA20170049A MD20170049A MD4552B1 MD 4552 B1 MD4552 B1 MD 4552B1 MD A20170049 A MDA20170049 A MD A20170049A MD 20170049 A MD20170049 A MD 20170049A MD 4552 B1 MD4552 B1 MD 4552B1
- Authority
- MD
- Moldova
- Prior art keywords
- niobium
- single crystals
- tantalum
- temperature
- zone
- Prior art date
Links
- 229910052715 tantalum Inorganic materials 0.000 title abstract 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title abstract 5
- 239000013078 crystal Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 3
- RDSGSPSSNTWRJB-UHFFFAOYSA-N arsanylidyneniobium Chemical compound [Nb]#[As] RDSGSPSSNTWRJB-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052758 niobium Inorganic materials 0.000 abstract 3
- 239000010955 niobium Substances 0.000 abstract 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 abstract 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 abstract 2
- 239000003708 ampul Substances 0.000 abstract 2
- 229910052785 arsenic Inorganic materials 0.000 abstract 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 2
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 229910052740 iodine Inorganic materials 0.000 abstract 2
- 239000011630 iodine Substances 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 238000003786 synthesis reaction Methods 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
The invention relates to the field of material production technology for electronic engineering, namely the field of producing materials in the form of single crystals and can be used in the production of niobium or tantalum arsenide single crystals.The process for producing tantalum or niobium arsenide single crystals by the chemical transport reaction method in a closed volume with a temperature gradient and using iodine as a transport agent, in which pieces of tantalum or niobium, arsenic and iodine films are loaded into ampoules and placed in a furnace with three temperature zones of 610°C, 850°C and 800°C, the 850°C zone is located in the middle of the ampoule, arsenic - in the zone with the temperature of 610°C, tantalum or niobium - in the zone with the temperature of 800°C, and the quantity of the transport agent is selected depending on the pressure limit of the ampoule selected for the synthesis.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20170049A MD4552C1 (en) | 2017-04-20 | 2017-04-20 | Process for producing tantalum or niobium arsenide single crystals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20170049A MD4552C1 (en) | 2017-04-20 | 2017-04-20 | Process for producing tantalum or niobium arsenide single crystals |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MD4552B1 true MD4552B1 (en) | 2018-02-28 |
| MD4552C1 MD4552C1 (en) | 2018-09-30 |
Family
ID=61282888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MDA20170049A MD4552C1 (en) | 2017-04-20 | 2017-04-20 | Process for producing tantalum or niobium arsenide single crystals |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD4552C1 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2296189C2 (en) * | 2001-06-06 | 2007-03-27 | АММОНО Сп.з о.о. | Method and apparatus for producing three-dimensional monocrystalline gallium-containing nitride (variants) |
-
2017
- 2017-04-20 MD MDA20170049A patent/MD4552C1/en not_active IP Right Cessation
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2296189C2 (en) * | 2001-06-06 | 2007-03-27 | АММОНО Сп.з о.о. | Method and apparatus for producing three-dimensional monocrystalline gallium-containing nitride (variants) |
Non-Patent Citations (5)
| Title |
|---|
| B. Q. Lv, H. M. Weng, B. B. Fu, X. P. Wang, H. Miao, J. Ma, P. Richard, X. C. Huang, L. X. Zhao, G. F. Chen, Z. Fang, X. Dai, T. Qian, and H. Ding, Experimental Discovery of Weyl Semimetal TaAs, Phys.Rev.X5, 031013 (2015) * |
| Chandra Shekhar, Vicky Sü and Marcus Schmidt, Mobility induced unsaturated high linear magnetoresistance in transition-metal monopnictides Weyl semimetals, arXiv:1606.06649v1[cond-mat.mtrl-sci] 21 June 2016 * |
| G. S. Sxini,". D. Calvert, AND J. B. Tayl. Preparation and characterization of crystals of Mx- and mx2-type awsenides of niobium and tantalum. Division of Applied Chemistry, National Research Council, Ottawa, Canada, Received October 19, 1963 * |
| T. Besara, D. Rhodes, K.-W. Chen, Q. Zhang, B. Zheng,Y. Xin, L. Balicas, R. E. Baumbach, and T. Siegrist, Non-stoichiometry and Defects in the Weyl Semimetals TaAs, TaP, NbP, and NbAs, arXiv:1511.03221v1 [cond-mat.mtrl-sci] 10 Nov 2015 * |
| Zhilin Li, Hongxiang Chen, Shifeng Jin, Di Gan, Wenjun Wang, Liwei Guo, and Xiaolong Chen,Weyl Semimetal TaAs: Crystal Growth, Morphology, and Thermodynamics, Cryst. Growth Des. 16 (3), pp 1172–1175 (2016) * |
Also Published As
| Publication number | Publication date |
|---|---|
| MD4552C1 (en) | 2018-09-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG4A | Patent for invention issued | ||
| KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
| MM4A | Patent for invention definitely lapsed due to non-payment of fees |