MD4734C1 - Process for producing ZnO ceramics with high resistance and controlled stoichiometric deviation - Google Patents

Process for producing ZnO ceramics with high resistance and controlled stoichiometric deviation

Info

Publication number
MD4734C1
MD4734C1 MDA20180065A MD20180065A MD4734C1 MD 4734 C1 MD4734 C1 MD 4734C1 MD A20180065 A MDA20180065 A MD A20180065A MD 20180065 A MD20180065 A MD 20180065A MD 4734 C1 MD4734 C1 MD 4734C1
Authority
MD
Moldova
Prior art keywords
high resistance
hcl
sintering
controlled stoichiometric
producing zno
Prior art date
Application number
MDA20180065A
Other languages
Romanian (ro)
Russian (ru)
Other versions
MD20180065A2 (en
MD4734B1 (en
Inventor
Глеб КОЛИБАБА
Виктор СУМАН
Думитру РУСНАК
Original Assignee
Государственный Университет Молд0
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Государственный Университет Молд0 filed Critical Государственный Университет Молд0
Priority to MDA20180065A priority Critical patent/MD4734C1/en
Publication of MD20180065A2 publication Critical patent/MD20180065A2/en
Publication of MD4734B1 publication Critical patent/MD4734B1/en
Publication of MD4734C1 publication Critical patent/MD4734C1/en

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  • Compositions Of Oxide Ceramics (AREA)
  • Conductive Materials (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention relates to semiconductor material production processes and can be used in semiconductor technology.The process, according to the invention, consists in sintering ZnO powders by the chemical transport reaction method in a closed volume at a sintering temperature of 900…150°C, for 48…72 hours, with a temperature gradient in the sintering region of ≤10°C/cm and a cooling rate of the resulting ceramics of ≤100°C/hour. As transport agents are used HCl with an initial pressure of 1…6 atm, H2 with an initial pressure of 50…200% of the initial HCl pressure, and C in the amount of ≤HCl mol.
MDA20180065A 2018-08-22 2018-08-22 Process for producing ZnO ceramics with high resistance and controlled stoichiometric deviation MD4734C1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20180065A MD4734C1 (en) 2018-08-22 2018-08-22 Process for producing ZnO ceramics with high resistance and controlled stoichiometric deviation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20180065A MD4734C1 (en) 2018-08-22 2018-08-22 Process for producing ZnO ceramics with high resistance and controlled stoichiometric deviation

Publications (3)

Publication Number Publication Date
MD20180065A2 MD20180065A2 (en) 2020-02-29
MD4734B1 MD4734B1 (en) 2020-12-31
MD4734C1 true MD4734C1 (en) 2021-07-31

Family

ID=69723327

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20180065A MD4734C1 (en) 2018-08-22 2018-08-22 Process for producing ZnO ceramics with high resistance and controlled stoichiometric deviation

Country Status (1)

Country Link
MD (1) MD4734C1 (en)

Also Published As

Publication number Publication date
MD20180065A2 (en) 2020-02-29
MD4734B1 (en) 2020-12-31

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Legal Events

Date Code Title Description
FG4A Patent for invention issued
KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)