MD3511C2 - Process for magnesium diboride obtaining - Google Patents
Process for magnesium diboride obtaining Download PDFInfo
- Publication number
- MD3511C2 MD3511C2 MDA20050310A MD20050310A MD3511C2 MD 3511 C2 MD3511 C2 MD 3511C2 MD A20050310 A MDA20050310 A MD A20050310A MD 20050310 A MD20050310 A MD 20050310A MD 3511 C2 MD3511 C2 MD 3511C2
- Authority
- MD
- Moldova
- Prior art keywords
- container
- magnesium
- obtaining
- temperature
- placement
- Prior art date
Links
- PZKRHHZKOQZHIO-UHFFFAOYSA-N [B].[B].[Mg] Chemical compound [B].[B].[Mg] PZKRHHZKOQZHIO-UHFFFAOYSA-N 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 abstract 3
- 229910052749 magnesium Inorganic materials 0.000 abstract 3
- 239000011777 magnesium Substances 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000002243 precursor Substances 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
The invention relates to the electroenergetics, cryoelectronics, and may be used for obtaining superconducting compounds and materials.The process for magnesium diboride obtaining consists in the separate placement into a container of the metallic magnesium and of a boron-containing precursor, vacuumization of the container, hermetic sealing and heating thereof. After vacuumization the container is closed with a valve. The magnesium placement zone is heated up to the temperature of 650…750°C. Concomitantly, the valve zone temperature is decreased up to values lower than the value of the magnesium placement zone temperature and is maintained during 10 min. Then the temperature in the container is raised up to 650…750°C and is maintained during 10…60 min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20050310A MD3511C2 (en) | 2005-10-28 | 2005-10-28 | Process for magnesium diboride obtaining |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20050310A MD3511C2 (en) | 2005-10-28 | 2005-10-28 | Process for magnesium diboride obtaining |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| MD20050310A MD20050310A (en) | 2007-08-31 |
| MD3511B2 MD3511B2 (en) | 2008-02-29 |
| MD3511C2 true MD3511C2 (en) | 2008-09-30 |
Family
ID=38477220
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MDA20050310A MD3511C2 (en) | 2005-10-28 | 2005-10-28 | Process for magnesium diboride obtaining |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD3511C2 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030219911A1 (en) * | 2002-03-25 | 2003-11-27 | Xianghui Zeng | Method for producing boride thin films |
| US20050127353A1 (en) * | 2002-11-26 | 2005-06-16 | Suplinskas Raymond J. | Substrate and method for the formation of continuous magnesium diboride and doped magnesium diboride wires |
| RU2261233C1 (en) * | 2004-02-18 | 2005-09-27 | Научно-исследовательское учреждение Институт физики им. Л.В. Киренского Сибирского отделения РАН | Method of production of a porous high-temperature superconducting ceramics based on bismuth |
| US20070190704A1 (en) * | 2004-02-19 | 2007-08-16 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
-
2005
- 2005-10-28 MD MDA20050310A patent/MD3511C2/en not_active IP Right Cessation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030219911A1 (en) * | 2002-03-25 | 2003-11-27 | Xianghui Zeng | Method for producing boride thin films |
| US20050127353A1 (en) * | 2002-11-26 | 2005-06-16 | Suplinskas Raymond J. | Substrate and method for the formation of continuous magnesium diboride and doped magnesium diboride wires |
| RU2261233C1 (en) * | 2004-02-18 | 2005-09-27 | Научно-исследовательское учреждение Институт физики им. Л.В. Киренского Сибирского отделения РАН | Method of production of a porous high-temperature superconducting ceramics based on bismuth |
| US20070190704A1 (en) * | 2004-02-19 | 2007-08-16 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
Non-Patent Citations (3)
| Title |
|---|
| Moon H. and all. High critical densities in superconducting MgB2 thin films. Applied Physics Letters, 2001, v. 79, p. 2429-2431 * |
| Moon H. and all. High critical densities in superconducting MgB2 thin films. Applied Physics Letters. 2001, v. 79, p. 2429-2432 * |
| Reddy E. S., Schmitz G. J. Superconducting foams, Superconductor Science & Technology. 2002, vol. 15, p. L21-L24 * |
Also Published As
| Publication number | Publication date |
|---|---|
| MD20050310A (en) | 2007-08-31 |
| MD3511B2 (en) | 2008-02-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
| MM4A | Patent for invention definitely lapsed due to non-payment of fees |