MD3511C2 - Procedeu de obţinere a diborurii de magneziu - Google Patents

Procedeu de obţinere a diborurii de magneziu Download PDF

Info

Publication number
MD3511C2
MD3511C2 MDA20050310A MD20050310A MD3511C2 MD 3511 C2 MD3511 C2 MD 3511C2 MD A20050310 A MDA20050310 A MD A20050310A MD 20050310 A MD20050310 A MD 20050310A MD 3511 C2 MD3511 C2 MD 3511C2
Authority
MD
Moldova
Prior art keywords
container
magnesium
obtaining
temperature
placement
Prior art date
Application number
MDA20050310A
Other languages
English (en)
Russian (ru)
Other versions
MD20050310A (ro
MD3511B2 (ro
Inventor
Владимир ЗДРАВКОВ
Анатолие СИДОРЕНКО
Томас Кох
Томас ШИММЕЛ
Original Assignee
Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы filed Critical Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы
Priority to MDA20050310A priority Critical patent/MD3511C2/ro
Publication of MD20050310A publication Critical patent/MD20050310A/ro
Publication of MD3511B2 publication Critical patent/MD3511B2/ro
Publication of MD3511C2 publication Critical patent/MD3511C2/ro

Links

Landscapes

  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)

Abstract

Invenţia se referă la electroenergetică, crioelectronică şi poate fi utilizată pentru obţinerea compuşilor şi materialelor supraconductibile.Procedeul de obţinere a diborurii de magneziu constă în amplasarea separată într-un container a magneziului metalic şi a unui precursor ce conţine bor, vidarea containerului, ermetizarea şi încălzirea lui. După vidare containerul se închide cu un ventil. Zona de amplasare a magneziului se încălzeşte până la temperatura de 650…750°C. Concomitent, temperatura zonei ventilului se coboară până la valori mai mici ca valoarea temperaturii zonei de amplasare a magneziului şi se menţine timp de 10 min. Apoi temperatura în container se ridică până la 650...950°C şi se menţine timp de 10…60 min.
MDA20050310A 2005-10-28 2005-10-28 Procedeu de obţinere a diborurii de magneziu MD3511C2 (ro)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20050310A MD3511C2 (ro) 2005-10-28 2005-10-28 Procedeu de obţinere a diborurii de magneziu

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20050310A MD3511C2 (ro) 2005-10-28 2005-10-28 Procedeu de obţinere a diborurii de magneziu

Publications (3)

Publication Number Publication Date
MD20050310A MD20050310A (ro) 2007-08-31
MD3511B2 MD3511B2 (ro) 2008-02-29
MD3511C2 true MD3511C2 (ro) 2008-09-30

Family

ID=38477220

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20050310A MD3511C2 (ro) 2005-10-28 2005-10-28 Procedeu de obţinere a diborurii de magneziu

Country Status (1)

Country Link
MD (1) MD3511C2 (ro)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030219911A1 (en) * 2002-03-25 2003-11-27 Xianghui Zeng Method for producing boride thin films
US20050127353A1 (en) * 2002-11-26 2005-06-16 Suplinskas Raymond J. Substrate and method for the formation of continuous magnesium diboride and doped magnesium diboride wires
RU2261233C1 (ru) * 2004-02-18 2005-09-27 Научно-исследовательское учреждение Институт физики им. Л.В. Киренского Сибирского отделения РАН Способ получения пористой высокотемпературной сверхпроводящей керамики на основе висмута
US20070190704A1 (en) * 2004-02-19 2007-08-16 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030219911A1 (en) * 2002-03-25 2003-11-27 Xianghui Zeng Method for producing boride thin films
US20050127353A1 (en) * 2002-11-26 2005-06-16 Suplinskas Raymond J. Substrate and method for the formation of continuous magnesium diboride and doped magnesium diboride wires
RU2261233C1 (ru) * 2004-02-18 2005-09-27 Научно-исследовательское учреждение Институт физики им. Л.В. Киренского Сибирского отделения РАН Способ получения пористой высокотемпературной сверхпроводящей керамики на основе висмута
US20070190704A1 (en) * 2004-02-19 2007-08-16 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Moon H. and all. High critical densities in superconducting MgB2 thin films. Applied Physics Letters, 2001, v. 79, p. 2429-2431 *
Moon H. and all. High critical densities in superconducting MgB2 thin films. Applied Physics Letters. 2001, v. 79, p. 2429-2432 *
Reddy E. S., Schmitz G. J. Superconducting foams, Superconductor Science & Technology. 2002, vol. 15, p. L21-L24 *

Also Published As

Publication number Publication date
MD20050310A (ro) 2007-08-31
MD3511B2 (ro) 2008-02-29

Similar Documents

Publication Publication Date Title
CN101450499A (zh) 一种木材碳化方法
CN101649449A (zh) 硫化锌/硒化锌复合红外透过材料的制备方法及模具
MD3511C2 (ro) Procedeu de obţinere a diborurii de magneziu
TW200626735A (en) Organic materials for an evaporation source
WO2014079836A3 (en) Synthetic diamond heat spreaders
WO2009114157A3 (en) Feed material composition and handling in a channel induction furnace
TNSN07392A1 (en) Seal with expandable graphite
EP1867704A4 (en) SURFACE TREATMENT METHOD USING A DISCONNECTED COMPOUND, (LUBRICATE) COMPOSITION FOR SURFACE TREATMENT AND SURFACE TREATED ARTICLE
WO2009114159A3 (en) Feed material composition and handling in a channel induction furnace
CN202580597U (zh) 便携式液氮转运装置
CN210525396U (zh) 一种竹片油热处理窑
CN104496548B (zh) 一种金属陶瓷表面处理方法
IN2015DN02708A (ro)
CN102408243B (zh) 一种含碳耐火制品的加工方法
CN203987673U (zh) 一种刺针外置水袋简易式旋转自加热容器
CN209722029U (zh) 一种高温高压的炭化炉
CN206447932U (zh) 一种新型固体渗金属炉台结构
GR1006099B (el) Παρασκευη τρισδιαστατων μεταλλικων σπογγων ανοικτου κελιου με την μεθοδο εμποτισμου αφρου πολυουρεθανης και αντιστοιχων συγγενικων υλικων σε παχυρευστο μειγμα κονεως μεταλλου και αλατων
Hu et al. Diffusion study in interface of iridium/rhenium composite prepared by CVD.
TW200628074A (en) Bread paper container
RU2012110742A (ru) Способ изготовления изделий из композиционных материалов
KR101716290B1 (ko) 천연 자개를 이용한 수저통 제조 방법 및 이를 이용한 수저통
TW200611986A (en) Method used to fill hydrogen into zirconium alloy
Zhou et al. Evolvement of sintering shrinkage and chemical composition of millicron-Ti (CN) base cermets during sintering.
MX342557B (es) Metodo para impregnar crisoles y articulos refractarios.

Legal Events

Date Code Title Description
KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees