MD1216G2 - Photodetector of ultra-violet radiation - Google Patents

Photodetector of ultra-violet radiation

Info

Publication number
MD1216G2
MD1216G2 MD97-0213A MD970213A MD1216G2 MD 1216 G2 MD1216 G2 MD 1216G2 MD 970213 A MD970213 A MD 970213A MD 1216 G2 MD1216 G2 MD 1216G2
Authority
MD
Moldova
Prior art keywords
ultra
violet radiation
semiconductors
photodetector
power width
Prior art date
Application number
MD97-0213A
Other languages
Romanian (ro)
Russian (ru)
Other versions
MD1216F1 (en
Inventor
Валериан ДОРОГАН
Татьяна ВИЕРУ
Valeriu Coseac
Florian Chirita
Original Assignee
Валериан ДОРОГАН
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Валериан ДОРОГАН filed Critical Валериан ДОРОГАН
Priority to MD97-0213A priority Critical patent/MD1216G2/en
Publication of MD1216F1 publication Critical patent/MD1216F1/en
Publication of MD1216G2 publication Critical patent/MD1216G2/en

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  • Light Receiving Elements (AREA)

Abstract

The invention relates to photodetectors on the semiconductors base, in particular, to photodetectors of ultra-violet radiation and can be used in the optoelectronic systems for determining the intensity and dose of ultra-violet radiation emitted by the Sun and other sources.In the structure of the photodetector of ultra-violet radiation with a superficial potential barrier formed of semiconductors A3B5 with the prohibited power width Eg1, solid solutions thereof with the prohibited power width Eg2 and SnO2 or ITO, in the semiconductors A3 B5 at a surface distance less than the absorption length of the visible radiation it is formed an isotype heterojunction between the semiconductors A3B5 and solid solutions thereof with the prohibited power width Eg2 > Eg1.The technical result consists in manufacturing of a photodetector sensitive solely to the ultra-violet radiation.
MD97-0213A 1997-07-25 1997-07-25 Photodetector of ultra-violet radiation MD1216G2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MD97-0213A MD1216G2 (en) 1997-07-25 1997-07-25 Photodetector of ultra-violet radiation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MD97-0213A MD1216G2 (en) 1997-07-25 1997-07-25 Photodetector of ultra-violet radiation

Publications (2)

Publication Number Publication Date
MD1216F1 MD1216F1 (en) 1999-04-30
MD1216G2 true MD1216G2 (en) 1999-11-30

Family

ID=19739041

Family Applications (1)

Application Number Title Priority Date Filing Date
MD97-0213A MD1216G2 (en) 1997-07-25 1997-07-25 Photodetector of ultra-violet radiation

Country Status (1)

Country Link
MD (1) MD1216G2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD1516G2 (en) * 1999-04-21 2001-01-31 Валериан ДОРОГАН Photodetector of ultra-violet radiation
MD340Z (en) * 2010-04-23 2011-09-30 Институт Электронной Инженерии И Промышленных Технологий Bolometer
MD4182C1 (en) * 2011-04-15 2013-04-30 Государственный Университет Молд0 Semiconductor device with relief p-n junction (embodiments)
MD4261B1 (en) * 2011-05-12 2013-11-30 Государственный Университет Молд0 Method for manufacturing a semiconductor device with relief p-n junction (embodiments)

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
Аннаева А. Р., Беркелиев А., Бессолов В. Н., Гольдберг Ю. А., Царенков Б. В., Яковлев Ю. П. ФП УФ излучения на основе варизонной Ga1-xAlxP (Xs=0,5+0,1) поверхностно-барьерной структуры. ФТП. 1981 г., том 15, вып. 6, с. 1122 *
Беркелиев А., Гольдберг Ю. А., Мелебаев Д., Царенков Б. В. ФП видимого и УФ излучения на основе GaAs1-xPx поверхностно-барьерных структур. ФТП. 1976 г., том 10, вып. 8, с. 1532-1538 *
Гуткин А. А., Дмитриев М. В., Наследов Д. Н., Пашковский А. В. Спектры фоточувствительности поверхностно-барьерного диода Au-n-GaAs в области энергий фотонов 1-5 эВ. ФТП. 1971 г., том 5, вып. 10, с. 1927-1933 *
Клячкин Л. Е., Лопатина Л. Б., Маляренко А. М., Суханов В. Л. Спектральные характеристики селективных ФП для видимой и УФ областей спектра. Письма в ЖТФ. 1985 г., том 11, в. 6, с. 354-356 *
Малик А. И., Грушка Г. Г. Оптоэлектронные свойства гетеропереходов окисей металла-GaP. ФТП. 1991 г., том 25, вып. 11, с. 1691-1696 *
Полупроводниковые фотоприемники: ультрафиолетовый, видимый и инфракрасный диапазоны спектра. Под ред. Стафеева В. И., Анисимова И. Д., Викулина И. М. Москва, Радио и связь, 1984 г., 310 с. *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD1516G2 (en) * 1999-04-21 2001-01-31 Валериан ДОРОГАН Photodetector of ultra-violet radiation
MD340Z (en) * 2010-04-23 2011-09-30 Институт Электронной Инженерии И Промышленных Технологий Bolometer
MD4182C1 (en) * 2011-04-15 2013-04-30 Государственный Университет Молд0 Semiconductor device with relief p-n junction (embodiments)
MD4261B1 (en) * 2011-05-12 2013-11-30 Государственный Университет Молд0 Method for manufacturing a semiconductor device with relief p-n junction (embodiments)

Also Published As

Publication number Publication date
MD1216F1 (en) 1999-04-30

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IF99 Valid patent on 19990615

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