MD2025C2 - Photodetector of ultra-violet radiation - Google Patents

Photodetector of ultra-violet radiation Download PDF

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Publication number
MD2025C2
MD2025C2 MDA20010246A MD20010246A MD2025C2 MD 2025 C2 MD2025 C2 MD 2025C2 MD A20010246 A MDA20010246 A MD A20010246A MD 20010246 A MD20010246 A MD 20010246A MD 2025 C2 MD2025 C2 MD 2025C2
Authority
MD
Moldova
Prior art keywords
ultra
radiation
violet radiation
violet
infra
Prior art date
Application number
MDA20010246A
Other languages
Romanian (ro)
Russian (ru)
Other versions
MD2025F2 (en
Inventor
Валериан ДОРОГАН
Татьяна ВИЕРУ
Ион ПРОДАН
Виталие СЕКРИЕРУ
Original Assignee
Валериан ДОРОГАН
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Валериан ДОРОГАН filed Critical Валериан ДОРОГАН
Priority to MDA20010246A priority Critical patent/MD2025C2/en
Publication of MD2025F2 publication Critical patent/MD2025F2/en
Publication of MD2025C2 publication Critical patent/MD2025C2/en

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  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Light Receiving Elements (AREA)

Abstract

The invention refers to the semiconducting photosensors, in particular to photodetectors of ultra-violet radiation, and may be used in optoelectronic systems for determining the intensity and the dose of the solar ultra-violet radiation or of any other radiation source.Summary of the invention consists in that the photosensitive stratum is divided into two identical elements, electrically isolated one from another, differentially connected to the load impedance, one of the elements being coated with a transparent layer for visible and infra-red radiation and opaque for ultra-violet radiation. The photosensitive stratum thickness is not less than the wave length of the absorption spectrum of the ultra-violet radiation and not more than the absorption spectrum wave for the visible and infra-red radiation.Fig: 1
MDA20010246A 2001-07-31 2001-07-31 Photodetector of ultra-violet radiation MD2025C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20010246A MD2025C2 (en) 2001-07-31 2001-07-31 Photodetector of ultra-violet radiation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20010246A MD2025C2 (en) 2001-07-31 2001-07-31 Photodetector of ultra-violet radiation

Publications (2)

Publication Number Publication Date
MD2025F2 MD2025F2 (en) 2002-10-31
MD2025C2 true MD2025C2 (en) 2003-06-30

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20010246A MD2025C2 (en) 2001-07-31 2001-07-31 Photodetector of ultra-violet radiation

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MD (1) MD2025C2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD1516F1 (en) * 1999-04-21 2000-07-31 Valerian Dorogan Photodetector of ultra-violet radiation
EP1132974A2 (en) * 2000-01-28 2001-09-12 Agere Systems Optoelectronics Guardian Corporation High speed semiconductor photodetector
US20020088943A1 (en) * 1998-09-14 2002-07-11 Prafulla Masalkar Infrared photodetector and method of manufacturing the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020088943A1 (en) * 1998-09-14 2002-07-11 Prafulla Masalkar Infrared photodetector and method of manufacturing the same
MD1516F1 (en) * 1999-04-21 2000-07-31 Valerian Dorogan Photodetector of ultra-violet radiation
MD1516G2 (en) * 1999-04-21 2001-01-31 Валериан ДОРОГАН Photodetector of ultra-violet radiation
EP1132974A2 (en) * 2000-01-28 2001-09-12 Agere Systems Optoelectronics Guardian Corporation High speed semiconductor photodetector

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
J. Miao, I. Tiginyanu, H. Hartnagel et al. The characteristics of high-resistance layer produced in nGaAs using MeV-nitrogen implantation for three-dimensional structuring. Appl. Phys. Lett., 70, (7), 1997, p. 847-849 *
Беркелиев A., Гольдберг Ю. А., Мелебаев Д., Царенков Б.В. ФП видимого и УФ излучения на основе GaAs1-xPx поверхностно-барьерных структур. ФТП, Т. 10, В. 8, 1976, с. 1532-1538 *
Гуткин А. А., Дмитриев М. В., Наследов Д. Н., Пашковский А. В. Спектры фоточувствительности поверхностно-барьерного диода Аu-n-GaAs в области энергии фотонов 1.5 эВ. ФТП, Т. 5, В. 10, 1971, с. 1927-1933 *
Клячкин Л. Е., Лопатина Л. Б., Маляренко А.М., Суханов В. Л. Спектральные характеристики селективных ФП для видимой и УФ областей спектра. Письма в ЖТФ, Т. 11, В. 6, 1985, с. 354-356 *
Малик A., Грушка Г.Г. Оптоэлектронные свойства гетеропереходов окисел металла GaP. ФТП, Т. 25, В. 11, 1991, с. 1691-1696 *
Стафеев В.И., Анисимова И.Д., Викулин И.М. Полупроводниковые фотоприемники: ультрафиолетовый, видимый и инфракрасный диапазоны спектра. Москва, Радио и связь, 1984, с. 310 *

Also Published As

Publication number Publication date
MD2025F2 (en) 2002-10-31

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