LU64758A1 - - Google Patents

Info

Publication number
LU64758A1
LU64758A1 LU64758DA LU64758A1 LU 64758 A1 LU64758 A1 LU 64758A1 LU 64758D A LU64758D A LU 64758DA LU 64758 A1 LU64758 A1 LU 64758A1
Authority
LU
Luxembourg
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19712106579 external-priority patent/DE2106579C3/de
Application filed filed Critical
Publication of LU64758A1 publication Critical patent/LU64758A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
LU64758D 1971-02-11 1972-02-09 LU64758A1 (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712106579 DE2106579C3 (de) 1971-02-11 Halbleiterspeicher

Publications (1)

Publication Number Publication Date
LU64758A1 true LU64758A1 (OSRAM) 1972-07-04

Family

ID=5798518

Family Applications (1)

Application Number Title Priority Date Filing Date
LU64758D LU64758A1 (OSRAM) 1971-02-11 1972-02-09

Country Status (8)

Country Link
US (1) US3747077A (OSRAM)
JP (1) JPS5217997B1 (OSRAM)
BE (1) BE779284A (OSRAM)
FR (1) FR2125339B1 (OSRAM)
GB (1) GB1384070A (OSRAM)
IT (1) IT947380B (OSRAM)
LU (1) LU64758A1 (OSRAM)
NL (1) NL7117525A (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3967252A (en) * 1974-10-03 1976-06-29 Mostek Corporation Sense AMP for random access memory
US3970950A (en) * 1975-03-21 1976-07-20 International Business Machines Corporation High common mode rejection differential amplifier utilizing enhancement depletion field effect transistors
JPH06103781A (ja) * 1992-09-21 1994-04-15 Sharp Corp メモリセル回路

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1113111A (en) * 1964-05-29 1968-05-08 Nat Res Dev Digital storage devices
GB1135403A (en) * 1965-03-23 1968-12-04 Mullard Ltd Method and apparatus for storing binary information utilising transistors
US3427445A (en) * 1965-12-27 1969-02-11 Ibm Full adder using field effect transistor of the insulated gate type
US3643235A (en) * 1968-12-30 1972-02-15 Ibm Monolithic semiconductor memory
GB1260426A (en) * 1969-08-18 1972-01-19 Marconi Co Ltd Improvements in or relating to memory cells
US3675218A (en) * 1970-01-15 1972-07-04 Ibm Independent read-write monolithic memory array
US3662356A (en) * 1970-08-28 1972-05-09 Gen Electric Integrated circuit bistable memory cell using charge-pumped devices

Also Published As

Publication number Publication date
FR2125339A1 (OSRAM) 1972-09-29
US3747077A (en) 1973-07-17
DE2106579B2 (de) 1976-03-25
NL7117525A (OSRAM) 1972-08-15
IT947380B (it) 1973-05-21
FR2125339B1 (OSRAM) 1975-03-21
BE779284A (OSRAM) 1972-05-30
DE2106579A1 (de) 1972-08-24
JPS5217997B1 (OSRAM) 1977-05-19
GB1384070A (en) 1975-02-19

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