LU101403B1 - Metal gate MOSFET terahertz detector based on periodically rasterized drain - Google Patents
Metal gate MOSFET terahertz detector based on periodically rasterized drain Download PDFInfo
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- LU101403B1 LU101403B1 LU101403A LU101403A LU101403B1 LU 101403 B1 LU101403 B1 LU 101403B1 LU 101403 A LU101403 A LU 101403A LU 101403 A LU101403 A LU 101403A LU 101403 B1 LU101403 B1 LU 101403B1
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- metal gate
- gate mosfet
- drain
- rasterized
- low noise
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- 239000002184 metal Substances 0.000 title claims abstract description 38
- 230000000903 blocking effect Effects 0.000 claims abstract description 21
- 239000003990 capacitor Substances 0.000 claims abstract description 21
- 230000004044 response Effects 0.000 claims abstract description 8
- 238000001514 detection method Methods 0.000 abstract description 7
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 238000011161 development Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
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- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The present invention discloses a metal gate MOSFET terahertz detector based on a periodically rasterized drain, comprising a metal gate MOSFET having the periodically rasterized drain and various different pattern forms thereof, a low noise preamplifier and a voltage feedback loop, wherein the drain of the metal gate MOSFET is always used for receiving a terahertz signal, the gate of the metal gate MOSFET is connected to a first bias voltage source via a first bias resistor, a first DC blocking capacitor is connected between a source of the metal gate MOSFET and a positive input terminal of the low noise preamplifier, and the positive input terminal of the low noise preamplifier is connected to a second bias voltage source via a second bias resistor; and the voltage feedback loop comprises a feedback resistor, a grounding resistor, a second DC blocking capacitor, and a third DC blocking capacitor. The present invention realizes the adjustment of the THz response wave-band range by adjusting rasterized structure parameters of the drain, thereby improving the detection sensitivity of the detector and realizing a narrow band (even point frequency) of terahertz detection.
Description
; 1 BL-5114 LU101403
RASTERIZED DRAIN Technical field The present invention relates to the technical field of terahertz detectors, and more particularly to a metal gate MOSFET terahertz detector based on a periodically rasterized drain. Technical background A Terahertz wave is an electromagnetic wave between microwaves and infrared light on the electromagnetic spectrum, and has a frequency of about 0.1 to 10 THz and a wavelength corresponding to 3 mm to 30 um. The Terahertz technology is one of the frontiers and hotspots of information science and technology research. In recent years, it has attracted extensive attention from research institutions around the world. Developed countries such as the United States, Japan, and Europe have successively rated the terahertz technology as "the top ten technologies for changing the future world" and "the top ten strategic goals of the country's key technology”, and invested heavily to consolidate their international status in the terahertz field. Terahertz has broad application prospects and has a wide range of technical applications in astrophysics, materials science, biomedicine, environmental science, spectroscopy and imaging technology, information science and technology and the like. The Terahertz technology can significantly enhance China's strength in aerospace, space communications, biomedical, even food testing and other aspects. A terahertz detector, which is the basis of terahertz applications, is a key component of terahertz security and detection. In the terahertz wave band, any conductor leads may cause extremely serious parasitic effects, so that the performance of most detectors based on the HI-V/II-VI process is difficult to control, even in the absence of work, thereby limiting the | |
| | 2 BL-5114 LU101403 practical use of this type of terahertz detectors. The development of CMOS-compatible process-based room-temperature terahertz detectors is the basis for low-cost and large-scale promotion of terahertz detection and array imaging. However, at present, the existing CMOS-compatible process-based detectors generally have many shortcomings such as a slow response speed, low sensitivity, a high cost, and a demand of generally working at a low temperature, which greatly limits the integration application and development of the terahertz technology. Therefore, the development of CMOS-compatible room-temperature terahertz detectors with high responsiveness, high sensitivity and low prices has become a problem urgently needed to be solved in the integration application and development of the terahertz technology. Summary of the invention The present invention provides a metal gate MOSFET terahertz detector based on a periodically rasterized drain. The adjustment of the THz response wave-band range is realized by adjusting rasterized structure parameters (width, length, region area, period, and pattern form of grating) of the drain, thereby improving the detection sensitivity of the detector; and by photolithography, nanoimprinting and regulation of artificial microstructure materials, a grating structure with an adjustable period and having various pattern forms is introduced to replace a drain of an original metal gate MOSFET, achieving the rasterization of the drain prepared by a CMOS-compatible low-dimensional semiconductor material (such as a nanowire), so that the drain is resonated with the terahertz waves, enhancing the plasma resonance effect, thereby increasing the response speed of the detector. The objects of the present invention are achieved by the following technical solutions.
A metal gate MOSFET terahertz detector based on a periodically rasterized drain of the present invention, comprising a metal gate MOSFET having the periodically
; | BL-5114 LU101403 rasterized drain and various different pattern forms thereof, a low noise preamplifier and a voltage feedback loop; wherein the drain of the metal gate MOSFET is always used for receiving a terahertz signal, the gate of the metal gate MOSFET is connected to a first bias voltage source via a first bias resistor, a first DC blocking capacitor is connected between a source of the metal gate MOSFET and a positive input terminal of the low noise preamplifier, and the positive input terminal of the low noise preamplifier is connected to a second bias voltage source via a second bias resistor; andthe voltage feedback loop comprises a feedback resistor, a grounding resistor, a second DC blocking capacitor, and a third DC blocking capacitor, the feedback resistor is connected between an output terminal and a negative input terminal of the low noise preamplifier, one end of the grounding resistor is connected to the negative input terminal of the low noise preamplifier and the other end is grounded via the second DC blocking capacitor, and one end of the third DC blocking capacitor is connected to the output terminal of the low noise preamplifier and the other end is grounded.
The first bias voltage source and the first bias resistor are used for supplying DC power to the metal gate MOSFET, and a THz response wave-band range is adjusted by adjusting rasterized structure parameters (width, length, region area, period, and pattern form of grating) of the drain of the metal gate MOSFET.
Compared with the prior art, the technical solutions of the present invention have the following beneficial effects: (1) The present invention is based on a silicon-based CMOS process, which is convenient to integrate with a back-end circuit, and is easy to realize mass production, thereby reducing the cost of the detector. | |
| | 4 BL-5114 LU101403 (2) The present invention can realize the adjustment of the THz response wave-band range by adjusting the rasterized structure parameters (the width, the length, the region area, the period, and the pattern form of the grating) of the drain.
(3) By adopting the method of rasterizing the drain of the metal gate MOSFET, the present invention can reduce diffusion and loss problems of weak terahertz signals in space and plasma excited by a metal structure in the source region in the propagation process.
(4) The present invention does not need to use an antenna, and can effectively avoid the problems such as a large loss and a low gain and radiation efficiency of an on-chip antenna, and difficulty in verifying by a DRC design rule; and the chip area is greatly reduced, and the production cost is greatly reduced.
(5) The present invention can utilize the grating to regulate the resonance principle of light and the like, so that the rasterized drain and the terahertz wave resonate, thereby improving the photoelectric conversion efficiency. Brief description of the drawings Fig. 1 is a schematic diagram of two metal gate MOSFETs with periodically rasterized drain structures and different grating pattern forms; and Fig. 2 is a circuit diagram of a metal gate MOSFET terahertz detector based on a periodically rasterized drain. Reference signs: Vb1 first bias voltage source; Vb2 second bias voltage source: Rb1 first bias resistor; Rb2 second bias resistor; C1 first DC blocking capacitor; C2 second DC blocking capacitor; C3 third DC blocking capacitor; Q1 metal gate MOSFET, Q2 low noise preamplifier; Rf feedback resistor; Rg grounding resistor, |
: Le BL-5114 LU101403 GND grounded. Detailed description of the embodiments 5 The present invention will be further described below with reference to the accompanying drawings. A metal gate MOSFET terahertz detector based on a periodically rasterized drain of the present invention, as shown in Figs. 1 and 2, includes a metal gate MOSFET Q1 having the periodically rasterized drain and various different pattern forms thereof, a low noise preamplifier Q2 and a voltage feedback loop. The drain Grating-D of the metal gate MOSFET Q1 is always used for receiving a terahertz signal. The gate Gate of the metal gate MOSFET Q1 is connected via a first bias resistor Rb1 to load a bias voltage source Vb1 for supplying DC power to the metal gate MOSFET Q1. The adjustment of the THz response wave-band range can be realized by adjusting rasterized structure parameters (width, length, region area, period, and pattern form of grating) of the drain Grating-D of the metal gate MOSFET Q1, thereby improving the detection sensitivity of the terahertz detector. Herein, the first bias voltage source Vb1 is a fixed DC bias voltage source. Afirst DC blocking capacitor C1 is connected between a source S of the metal gate MOSFET Q1 and a positive input terminal of the low noise preamplifier Q2. The positive input terminal of the low noise preamplifier Q2 is connected to the second bias voltage source (Vb2) via the second bias resistor Rb2. Herein, the second bias resistor Rb2 and the second bias voltage source Vb2 are used for supplying power to the low noise preamplifier Q2; and the second bias voltage source Vb2 is a fixed DC bias voltage source.
The voltage feedback loop is mainly composed of a feedback resistor Rf a
| 6 | BL-5114 LU101403 grounding resistor Rg, a second DC blocking capacitor C2, and a third DC blocking capacitor C3. The feedback resistor Rf is connected between an output terminal and a negative input terminal of the low noise preamplifier Q2, one end of the grounding resistor Rg is connected to the negative input terminal of the low noise preamplifier Q2, and the other end is grounded GND via the second DC blocking capacitor C2, and one end of the third DC blocking capacitor C3 is connected to the output terminal of the low noise preamplifier Q2, and the other end is grounded GND.
Herein, the adjustment of the gain of the low noise preamplifier Q2 can be realized by changing the resistance values of the feedback resistor Rf and the grounding resistor Rg.
The output voltage signal of the metal gate MOSFET terahertz detector based on a periodically rasterized drain of the present invention is a DC voltage signal, and the magnitude of the DC voltage signal is proportional to the radiation intensity of the terahertz signal, so that the intensity information of the incident terahertz signal can be obtained according to the magnitude of the output voltage signal of the terahertz detector, thereby realizing terahertz detection.
Although the functions and working processes of the present invention have been described above with reference to the accompanying drawings, the present invention is not limited to the specific functions and working processes described above, and the specific embodiments described above are merely illustrative and not limiting.
Many forms may be made by an ordinary person skilled in the art under the inspiration of the present invention, without departing from the gist of the present invention and the scope protected by the claims, and all of these are within the protection of the present invention. | |
Claims (2)
1. A metal gate MOSFET terahertz detector based on a periodically rasterized drain, characterized in that it comprises a metal gate MOSFET (Q1) having the periodically rasterized drain and various different pattern forms thereof, a low noise preamplifier (Q2) and a voltage feedback loop; wherein the drain of the metal gate MOSFET (Q1) is always used for receiving a terahertz signal, and the gate of the metal gate MOSFET (Q1) is connected to a first bias voltage source (Vb1) via a first bias resistor (Rb1), wherein a first DC blocking capacitor (C1) is connected between a source of the metal gate MOSFET (Q1) and a positive input terminal of the low noise preamplifier (Q2), and the positive input terminal of the low noise preamplifier (Q2) is connected to a second bias voltage source (Vb2) via a second bias resistor (Rb2); and the voltage feedback loop comprises a feedback resistor (Rf), a grounding resistor (Rg), a second DC blocking capacitor (C2), and a third DC blocking capacitor (C3), wherein the feedback resistor (Rf) is connected between an output terminal and a negative input terminal of the low noise preamplifier (Q2), wherein one end of the grounding resistor (Rg) is connected to the negative input terminal of the low noise preamplifier (Q2) and the other end is grounded (GND) via the second DC blocking capacitor (C2), and one end of the third DC blocking capacitor (C3) is connected to the output terminal of the low noise preamplifier (Q2) and the other end is grounded (GND).
2. The metal gate MOSFET terahertz detector based on the periodically rasterized drain according to claim 1, characterized in that the first bias voltage source (Vb1) and the first bias resistor (Rb1) are used for supplying DC power to the metal gate MOSFET (Q1), and a THz response wave-band range is adjusted by adjusting |
| | 8 BL-5114 LU101403 rasterized structure parameters (width, length, region area, period, and pattern form of grating) of the drain of the metal gate MOSFET (Q1). |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811458932.5A CN109855732B (en) | 2018-11-30 | 2018-11-30 | Metal gate MOSFET terahertz detector based on periodic grating drain electrode |
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| LU101403B1 true LU101403B1 (en) | 2020-01-20 |
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| LU101403A LU101403B1 (en) | 2018-11-30 | 2019-09-19 | Metal gate MOSFET terahertz detector based on periodically rasterized drain |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7420225B1 (en) * | 2005-11-30 | 2008-09-02 | Sandia Corporation | Direct detector for terahertz radiation |
| JP5473616B2 (en) * | 2009-02-09 | 2014-04-16 | 独立行政法人理化学研究所 | Terahertz electromagnetic wave detection device and detection method thereof |
| DE102011076840B4 (en) * | 2011-05-31 | 2013-08-01 | Johann Wolfgang Goethe-Universität Frankfurt am Main | A monolithically integrated antenna and receiver circuit and THz heterodyne receiver and imaging system comprising the same and use thereof for detecting electromagnetic radiation in the THz frequency range |
| CN102279476B (en) * | 2011-07-15 | 2013-06-12 | 中国科学院苏州纳米技术与纳米仿生研究所 | High-speed electrically-modulating terahertz modulator |
| KR101388655B1 (en) * | 2012-05-29 | 2014-04-25 | 한국전기연구원 | Terahertz Detection Apparatus having Asymmetric Structure in FET for Response Enhancement |
| US20160172527A1 (en) * | 2012-12-03 | 2016-06-16 | Sandia Corporation | Photodetector with Interdigitated Nanoelectrode Grating Antenna |
| CN105140248B (en) * | 2015-07-23 | 2018-02-06 | 南京大学 | A kind of high responsive operation method based on CMOS Terahertz sensors |
| CN105300530B (en) * | 2015-11-10 | 2018-07-31 | 中国科学院半导体研究所 | Terahertz wave detector with reading circuit |
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- 2018-11-30 CN CN201811458932.5A patent/CN109855732B/en active Active
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| CN109855732A (en) | 2019-06-07 |
| CN109855732B (en) | 2021-03-16 |
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