CN105140248B - A kind of high responsive operation method based on CMOS Terahertz sensors - Google Patents
A kind of high responsive operation method based on CMOS Terahertz sensors Download PDFInfo
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- CN105140248B CN105140248B CN201510440031.3A CN201510440031A CN105140248B CN 105140248 B CN105140248 B CN 105140248B CN 201510440031 A CN201510440031 A CN 201510440031A CN 105140248 B CN105140248 B CN 105140248B
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Abstract
A kind of method of work based on CMOS terahertz signal sensors, MOSFET provide a stable driving current to the source and drain both ends of device at work, using external circuitses, change the DC conductance of raceway groove.Add DC offset voltage V on MOSFET element grid (201)gs, terahertz signal inputs from source (202), and drain terminal (203) connects a constant current source (204), output voltage.In this operating mode, the raceway groove DC conductance (G due to channel current nowDS) change：It can make it that the voltage responsive (RV) of CMOS terahertz signal sensors is bigger, noise equivalent power (NEP) is lower.
Description
Technical field
The present invention relates to one kind to be based on CMOS terahertz signal sensors, further relates to a kind of Novel work of this sensor
Pattern, this mode of operation can significantly improve its response and reduction noise equivalent power (NEP) to terahertz signal.
Background technology
Terahertz be a kind of frequency between microwave and it is infrared between electromagnetic wave, there are many properties：Photon energy
It is small, to material fanout free region；It can penetrate that ceramics etc. are nonmetallic and non-polar material easily；The bearing capacity of the high information of THz wave frequency
It is more much greater etc. than microwave.Therefore terahertz detection technology is in broadband connections, radar, medical imaging, Non-Destructive Testing, safety inspection
There is important application prospect Deng field.And in current terahertz detector, the manufacture based on integrated circuit technology with
MOSFET is the terahertz detector of sensor, has working and room temperature, low cost, and the outstanding advantage such as high imaging capability, is future
The practical possible approaches of Terahertz Technology.And responding abilities of the MOSFET to terahertz signal how is improved, it is to realize with it
Practical important directions.
Total CMOS terahertz detectors mainly include two modules of cmos sensor and Terahertz antenna.Cmos sensor
THz wave is mainly converted into direct current signal using inversion layer two-dimensional electron gas in MOSFET element.Since Germany in 2009
ErikDeng the ripple for detecting 0.65THZ using the transistor of 0.25m integrated circuit technologies first【1】Since, it is many
Laboratory attempts to manufacture the CMOS terahertz imaging devices of higher performance.French electron and information technology experiment (CEA-LETI)
F.Schuster et al. has manufactured the CMOS terahertz imaging devices more than 1THZ frequencies by using 0.13m techniques【2】.2011
Year, German Hani Sherry have been made voltage responsive degree RV using the method for SOI technology and basic lenticule and have been more than
1900V/W, noise equivalent power NEP can reach 17pW/Hz1/2CMOS terahertz detectors【3】.Min Woo Ryu etc. then lead to
Change transistor source shape is crossed, manufactures nonsymmetrical transistor to improve the new energy of detector【4】.But above-mentioned all methods are all
It is related to the introducing of new technology and new construction, production cost and manufacture difficulty can be caused to ramp, therefore looks for one kind not
The method for changing device architecture and manufacturing process can improvement detector performance is very meaningful.
Bibliography
[1]ErikUllrich R.Pfeiffer,Alvydas Lisauskas,and Hartmut
G.Roskos “A 0.65THz Focal-Plane Array in a Quarter-Micron CMOS Process
Technology”IEEE JOURNAL OF SOLID-STATE CIRCUITS,VOL.44,NO.7,1968(2009)
[2]Schuster F.；Univ.Montpellier 2,Montpellier,France；Videlier,H.；
Sakowicz,M.；Teppe,F.“Imaging above 1THz limit with Si-MOSFET detectors”35th
International Conference on Infrared Millimeter and Terahertz Waves (IRMMW-
THz),Itlia(2010).
[3]Sherry,H.；Al Hadi,R.；Grzyb,J.；Ojefors,E.；Cathelin,A.；Kaiser,A.；
Pfeiffer,U.R.“Lens-Integrated THz Imaging Arrays in 65nm CMOS Technologies”
2011IEEE Radio Frequency Integrated Circuits Symposium(RFIC).
[4]Min Woo Ryu,Jeong Seop Lee,Kibog Parkand Kyung Rok Kim“TCAD
Modeling and Simulation of Non-ResonantPlasmonic THz Detector Based on
AsymmetricSilicon MOSFETs”2013Simulation of Semiconductor Processes and
Devices(SISPAD).
The content of the invention
The object of the present invention is in original CMOS terahertz signals sensor, do not changing device architecture and manufacture
On the premise of technique, by changing wherein MOSFET condition of work mode of operation in other words, stronger voltage responsive is obtained, from
And significantly improve the efficiency of detector.
High responsive operation method based on CMOS Terahertz sensors, MOSFET at work, are given using external circuitses
The source and drain both ends of CMOS Terahertz sensor components provide a stable driving current, change the DC conductance of raceway groove；With tradition
Mode of operation compare, this Novel work pattern or method, the voltage responsive of CMOS terahertz signal sensors can make it that
(RV) bigger, noise equivalent power (NEP) is lower.
Add DC offset voltage V wherein on MOSFET element grid (201)gs, terahertz signal from source (202) input,
Drain terminal (203) connects a constant current source (204), output voltage.This mode of operation can improve CMOS terahertz signals biography
The voltage responsive (RV) of sensor, reduce noise equivalent power (NEP).
The inventive method is applicable not only in the CMOS terahertz signal sensors being mixed using a MOSFET,
It is applicable the CMOS terahertz signal sensors using multiple MOSFET elements.
In existing CMOS Terahertzs sensor, it can use a MOSFET that terahertz signal is mixed into direct current and believe
Number, can also be connected two MOSFET drain terminals common performance mixer action.No matter which kind of CMOS Terahertz sensor, wherein
The basic functional principle and pattern of MOSFET element are all identical.
Fig. 1 be CMOS Terahertz sensors traditional working mode in MOSFET element working condition, on grid (101)
Add DC offset voltage Vgs, terahertz signal from source input (102), drain terminal (103) floating output DC voltage, pass through reading
Drain terminal DC voltage characterizes the terahertz signal intensity received.According to document [1], when the terahertz signal of input is Uasin
During ω t, under this mode of operation, the voltage responsive of output is：
Wherein UgtFor Vgs-Vth, VthFor MOSFET threshold voltage.
It is of the invention then propose a kind of Novel work pattern of CMOS terahertz signals sensor.In this mode, such as
Shown in Fig. 2, DC offset voltage V is added on MOSFET element grid (201)gs, terahertz signal from source input (202), drain terminal
(203) constant current source (204), and output voltage are connect.In this operating mode, the raceway groove due to channel current now
DC conductance (GDS) change：
Wherein W is MOSFET width, and L is MOSFET length, and μ is channel electron mobility, COXFor unit area gate oxidation
Layer capacitance, IDSATFor saturation current, IDOFor now channel current.Increase channel current can reduce channel conduction (G nowDS)。
As terahertz signal UaWhen sin ω t are inputted, direct current mixing current isOutput voltage now is：
Wherein λ=ID0/IDsat.Thus it will be seen that as drain terminal driving current electric current increases, the voltage of transistor
The rapid lifting of response.
In view of noise problem, the 1/f noise of raceway groove can be increased by increasing MOSFET channel current, but 1/f noise is with work
Working frequency substantially reduces, and can eliminate this noise by modulating working frequency.Therefore channel noise can only be considered, now
The noise equivalent power of detector is：
Wherein KBIt is Boltzmann constant, T is absolute temperature, RchIt is channel resistance, RVIt is the voltage responsive degree of transistor,
PinIt is Terahertz input power.When drain terminal driving current electric current increases, the voltage responsive increase of transistor, and the noise of detector
Equivalent power can also reduce therewith.
The present invention effective benefit be：MOSFET structure and manufacturing process need not be changed, by improving MOSFET too
The mode of operation of hertz sensor, between source and drain plus a driving current, you can significantly increase its voltage to THz wave and ring
Should, and reduce noise equivalent power (NEP) simultaneously.
Brief description of the drawings
The traditional working mode of Fig. 1 MOSFET terahertz detectors；
Fig. 2 Novel MOS FET terahertz detector mode of operations proposed by the present invention；
Fig. 3 MOSFET detectors under traditional working mode and Novel work pattern, voltage responsive with grid voltage pass
System.Black curve represents drain terminal floating traditional working mode, and red (light color spike line) curve represents driving current as the new of 5 μ A
Type mode of operation.
Fig. 4 responds the relation with drain terminal driving current for MOSFET detector voltages, and black dotted line is experimental result, red
(light color continuous lines) curve is the calculated results.
Specific embodiment
It is described in detail below in conjunction with the accompanying drawings to proposing a plan.
For this example with 0.18 μm of semiconductor technology manufacture Terahertz sensor of standard, wherein transistor size is 0.18
1 μm of μ m, and 650GHz antenna is integrated with to collect terahertz signal.We allow this Terahertz sensor work first
Make under traditional mode.As shown in figure 1, add DC offset voltage V on grid (101)gs, terahertz signal that antenna is collected into from
Source (102) inputs, drain terminal (103) floating, and the output voltage that is connected with lock-in amplifier.Black curve represents this in Fig. 3
Terahertz sensor in example voltage responsive and direct current biasing V under traditional working modegsRelation, it can be seen that now most
Big response voltage is about 50 μ V.
Then we allow same Terahertz working sensor under Novel work pattern proposed by the present invention.Such as Fig. 2 institutes
Show, DC offset voltage V is still added on grid (201)gs, the terahertz signal that antenna is collected into is also still defeated from source (202)
Enter, but now connect a constant current source (204) in drain terminal (203), then output voltage again.Current source in this example is by doing
Battery is in series with big resistance, can provide the stabling current of low noise.Red curve represents in Fig. 3 carries in the present invention
Under the Novel work pattern gone out, voltage responsive and the direct current biasing V of same Terahertz sensorgsRelation, it can be seen that this
When maximum response voltage can reach 200 μ V.And as shown in figure 4, the driving current of increase input can continue to improve
The voltage responsive of MOSFET sensors, when driving current reaches 10 μ A, the voltage responsive of detector is tradition close to 500 μ V
10 times of mode of operation.
The present invention proposes a kind of new Terahertz MOSFET working sensor patterns, by adding in drain terminal to transistor
One driving current, its voltage responsive to terahertz signal can be significantly improved, reduce noise equivalent power.Do not changing crystal
In the case of tubular construction and technique, improve the performance of Terahertz MOSFET sensors.
It will be appreciated by those skilled in the art that accompanying drawing is the schematic diagram of a preferred embodiment, and this hair is limited without one
It is bright, within the spirit and principles of the invention, any modification, equivalent substitution and improvements made etc., it should be included in the present invention
Protection domain within.
Claims (2)
- A kind of 1. method of work based on CMOS terahertz signal sensors, it is characterised in that MOSFET at work, using outer Connect circuit and provide a stable driving current to the source and drain both ends of device, change the DC conductance of raceway groove；Add DC offset voltage V on MOSFET element grid (201)gs, terahertz signal from source input (202), drain terminal (203) Connect a constant current source, and output voltage；In this operating mode, the raceway groove DC conductance due to channel current now (GDS) change：<mrow> <msub> <mi>G</mi> <mrow> <mi>D</mi> <mi>S</mi> </mrow> </msub> <mo>=</mo> <mfrac> <mi>W</mi> <mi>L</mi> </mfrac> <msub> <mi>&mu;C</mi> <mrow> <mi>O</mi> <mi>X</mi> </mrow> </msub> <msub> <mi>U</mi> <mrow> <mi>g</mi> <mi>t</mi> </mrow> </msub> <msqrt> <mrow> <mn>1</mn> <mo>-</mo> <mfrac> <msub> <mi>I</mi> <mrow> <mi>D</mi> <mn>0</mn> </mrow> </msub> <msub> <mi>I</mi> <mrow> <mi>D</mi> <mi>s</mi> <mi>a</mi> <mi>t</mi> </mrow> </msub> </mfrac> </mrow> </msqrt> </mrow>Wherein W is MOSFET width, and L is MOSFET length, and μ is channel electron mobility, COXFor unit area gate oxide electricity Hold, IDSATFor raceway groove saturation current, IDOFor now channel current, UgtFor Vgs-Vth, VthFor MOSFET threshold voltage；Increase ditch Road electric current can reduce channel conduction G nowDS；As terahertz signal UaWhen sin ω t are inputted, direct current mixing current isOutput voltage now is：<mrow> <mi>&Delta;</mi> <mi>U</mi> <mo>=</mo> <mfrac> <mrow> <mi>&Delta;</mi> <mi>I</mi> </mrow> <msub> <mi>G</mi> <mrow> <mi>d</mi> <mi>s</mi> </mrow> </msub> </mfrac> <mo>=</mo> <mfrac> <msubsup> <mi>U</mi> <mi>a</mi> <mn>2</mn> </msubsup> <mrow> <mn>4</mn> <msub> <mi>U</mi> <mrow> <mi>g</mi> <mi>t</mi> </mrow> </msub> <msqrt> <mrow> <mn>1</mn> <mo>-</mo> <mi>&lambda;</mi> </mrow> </msqrt> </mrow> </mfrac> </mrow>Wherein λ=ID0/IDsat。
- 2. the method for work of CMOS terahertz signals sensor according to claim 1, it is characterized in that being applied to MOSFET The CMOS terahertz signal sensors being mixed, or be applicable and sensed using the CMOS terahertz signals of multiple MOSFET elements Device.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7376403B1 (en) * | 2005-04-25 | 2008-05-20 | Sandia Corporation | Terahertz radiation mixer |
| CN103090977A (en) * | 2012-11-30 | 2013-05-08 | 南京大学 | Terahertz signal detection device |
| JP2014103675A (en) * | 2013-12-19 | 2014-06-05 | Semiconductor Energy Lab Co Ltd | X-ray camera |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7376403B1 (en) * | 2005-04-25 | 2008-05-20 | Sandia Corporation | Terahertz radiation mixer |
| CN103090977A (en) * | 2012-11-30 | 2013-05-08 | 南京大学 | Terahertz signal detection device |
| JP2014103675A (en) * | 2013-12-19 | 2014-06-05 | Semiconductor Energy Lab Co Ltd | X-ray camera |
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