LU101402B1 - Metal gate MOSFET terahertz detector based on periodically rasterized gate - Google Patents
Metal gate MOSFET terahertz detector based on periodically rasterized gate Download PDFInfo
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- LU101402B1 LU101402B1 LU101402A LU101402A LU101402B1 LU 101402 B1 LU101402 B1 LU 101402B1 LU 101402 A LU101402 A LU 101402A LU 101402 A LU101402 A LU 101402A LU 101402 B1 LU101402 B1 LU 101402B1
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- metal gate
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- rasterized
- low noise
- gate mosfet
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
- G01V8/00—Prospecting or detecting by optical means
- G01V8/005—Prospecting or detecting by optical means operating with millimetre waves, e.g. measuring the black losey radiation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
- G01V8/00—Prospecting or detecting by optical means
- G01V8/10—Detecting, e.g. by using light barriers
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Abstract
The present invention discloses a metal gate MOSFET terahertz detector based on a periodically rasterized gate, comprising a metal gate MOSFET having the periodically rasterized gate and various different pattern forms thereof, a low noise preamplifier and a voltage feedback loop, wherein the gate of the metal gate MOSFET is used for receiving a terahertz signal, the gate of the metal gate MOSFET is connected to a first bias voltage source via a first bias resistor, a source of the metal gate MOSFET is grounded, a first DC blocking capacitor is connected between a drain of the metal gate MOSFET and a positive input terminal of the low noise preamplifier, and the positive input terminal of the low noise preamplifier is connected to a second bias voltage source via a second bias resistor; and the voltage feedback loop comprises a feedback resistor, a grounding resistor, a second DC blocking capacitor, and a third DC blocking capacitor. The present invention realizes the adjustment of the THz response wave-band range by adjusting rasterized structure parameters of the gate, thereby improving the detection sensitivity of the terahertz detector.
Description
BL-5113 LU101402
RASTERIZED GATE Technical field The present invention relates to the technical field of terahertz detectors, and more particularly to a metal gate MOSFET terahertz detector based on a periodically rasterized gate. Technical background A Terahertz wave is an electromagnetic wave between microwaves and infrared light on the electromagnetic spectrum, and has a frequency of about 0.1 to 10 THz and a wavelength corresponding to 3 mm to 30 um. The Terahertz technology is one of the frontiers and hotspots of information science and technology research. In recent years, it has attracted extensive attention from research institutions around the world. Developed countries such as the United States, Japan, and Europe have successively rated the terahertz technology as "the top ten technologies for changing the future world" and "the top ten strategic goals of the country's key technology”, and invested heavily to consolidate their international status in the terahertz field. Terahertz has broad application prospects and has a wide range of technical applications in astrophysics, materials science, biomedicine, environmental science, spectroscopy and imaging technology, information science and technology and the like. The Terahertz technology can significantly enhance China's strength in aerospace, space communications, biomedical, even food testing and other aspects. A terahertz detector, which is the basis of terahertz applications, is a key component of terahertz security and detection. In the terahertz wave band, any conductor leads may cause extremely serious parasitic effects, so that the performance of most detectors based on the IH-V/I-VI process is difficult to control, even in the absence of work, thereby limiting the
BL-5113 LU101402 practical use of this type of terahertz detectors. The development of CMOS-compatible process-based room-temperature terahertz detectors is the basis for low-cost and large-scale promotion of terahertz detection and array imaging. However, at present, the existing CMOS-compatible process-based detectors generally have many shortcomings such as a slow response speed, low sensitivity, a high cost, and a demand of generally working at a low temperature, which greatly limits the integration application and development of the terahertz technology. Therefore, the development of CMOS-compatible room-temperature terahertz detectors with high responsiveness, high sensitivity and low prices has become a problem urgently needed to be solved in the integration application and development of the terahertz technology. Summary of the invention The present invention provides a metal gate MOSFET terahertz detector based on a periodically rasterized gate. The adjustment of the THz response wave-band range is realized by adjusting rasterized structure parameters (width, length, region area, period, and pattern form of grating) of the gate, thereby improving the detection sensitivity of the detector; and by photolithography, nanoimprinting and regulation of artificial microstructure materials, a grating structure with an adjustable period and having various pattern forms is introduced to replace a metal gate of an original MOSFET, achieving the rasterization of the metal gate prepared by a CMOS-compatible low-dimensional semiconductor material (such as a nanowire), so that the gate is resonated with the terahertz waves, enhancing the plasma resonance effect, thereby increasing the response speed of the detector. The objects of the present invention are achieved by the following technical solutions.
A metal gate MOSFET terahertz detector based on a periodically rasterized gate of the present invention, comprising a metal gate MOSFET having the periodically
BL-5113 LU101402 rasterized gate and various different pattern forms thereof, a low noise preamplifier and a voltage feedback loop; wherein the gate of the metal gate MOSFET is used for receiving a terahertz signal, the gate of the metal gate MOSFET is connected to a first bias voltage source via a first bias resistor, a source of the metal gate MOSFET is grounded, a first DC blocking capacitor is connected between a drain of the metal gate MOSFET and a positive input terminal of the low noise preamplifier, and the positive input terminal of the low noise preamplifier is connected to a second bias voltage source via a second bias resistor; and the voltage feedback loop comprises a feedback resistor, a grounding resistor, a second DC blocking capacitor, and a third DC blocking capacitor, the feedback resistor is connected between an output terminal and a negative input terminal of the low noise preamplifier, one end of the grounding resistor is connected to the negative input terminal of the low noise preamplifier and the other end is grounded via the second DC blocking capacitor, and one end of the third DC blocking capacitor is connected to the output terminal of the low noise preamplifier and the other end is grounded.
The first bias voltage source and the first bias resistor are used for supplying DC power to the metal gate MOSFET, and a THz response wave-band range is adjusted by adjusting rasterized structure parameters (width, length, region area, period, and pattern form of grating) of the gate of the metal gate MOSFET.
Compared with the prior art, the technical solutions of the present invention have the following beneficial effects: (1) The present invention is based on a silicon-based CMOS process, which is convenient to integrate with a back-end circuit, and is easy to realize mass
1 | 4 BL-5113 LU101402 production, thereby reducing the cost of the detector. (2) The present invention can realize the adjustment of the THz response wave-band range by adjusting the rasterized structure parameters (the width, the length, the region area, the period, and the pattern form of the grating) of the gate, thereby improving the detection sensitivity of the terahertz detector and realizing a narrow band (even point frequency) of terahertz detection. (3) By adopting the method of rasterizing the metal gate, the present invention can reduce diffusion and loss problems of weak terahertz signals in space and Plasmonic excited by a metal structure in the gate in the propagation process. (4) The present invention forms a rasterized channel in the channel, realizes resonance enhancement between the Plasmon in the substrate and the Plasmonic of the gate, and improves the detection efficiency. (5) The present invention does not need to use an antenna, and can effectively avoid the problems such as a large loss and a low gain and radiation efficiency of an on-chip antenna, and difficulty in verifying by a DRC design rule; and the chip area is greatly reduced, and the production cost is greatly reduced. (6) The present invention can utilize the grating to regulate the resonance principle of light and the like, so that the rasterized metal gate and the terahertz wave resonate, thereby improving the photoelectric conversion efficiency.
Brief description of the drawings Fig. 1 is a schematic diagram of two metal gate MOSFETs with periodically rasterized gate structures and different grating pattern forms; and
! BL-5113 LU101402 Fig. 2 is a circuit diagram of a metal gate MOSFET terahertz detector based on a periodically rasterized gate. Reference signs: Vb1 first bias voltage source; Vb2 second bias voltage source; 5 Rb1 first bias resistor; Rb2 second bias resistor; C1 first DC blocking capacitor; C2 second DC blocking capacitor; C3 third DC blocking capacitor; Q1 metal gate MOSFET, Q2 low noise preamplifier; Rf feedback resistor; Rg grounding resistor, GND grounded.
Detailed description of the embodiments The present invention will be further described below with reference to the accompanying drawings.
A metal gate MOSFET terahertz detector based on a periodically rasterized gate of the present invention, as shown in Figs. 1 and 2, includes a metal gate MOSFET Q1 having the periodically rasterized gate and various different pattern forms thereof, a low noise preamplifier Q2 and a voltage feedback loop.
The gate Grating-Gate of the metal gate MOSFET Q1 is used for receiving a terahertz signal. The gate Grating-Gate of the metal gate MOSFET Q1 is connected via a first bias resistor Rb1 to load a bias voltage source Vb1 for supplying DC power to the metal gate MOSFET Q1. The adjustment of the THz response wave-band range can be realized by adjusting rasterized structure parameters (width, length, region area, period, and pattern form of grating) of the gate Grating-Gate of the metal gate MOSFET Q1, thereby improving the detection sensitivity of the terahertz detector. Herein, the first bias voltage source Vb1 is a fixed DC bias voltage source.
A source S of the metal gate MOSFET Q1 is grounded GND, and a first DC blocking capacitor C1 is connected between a drain D of the metal gate MOSFET
BL-5113 LU101402 Q1 and a positive input terminal of the low noise preamplifier Q2. The positive input terminal of the low noise preamplifier Q2 is further connected to the second bias voltage source Vb2 via the second bias resistor Rb2. Herein, the second bias resistor Rb2 and the second bias voltage source Vb2 are used for supplying power to the low noise preamplifier Q2; and the second bias voltage source Vb2 is a fixed DC bias voltage source. The voltage feedback loop is mainly composed of a feedback resistor Rf, a grounding resistor Rg, a second DC blocking capacitor C2, and a third DC blocking capacitor C3. The feedback resistor Rf is connected between an output terminal and a negative input terminal of the low noise preamplifier Q2, one end of the grounding resistor Rg is connected to the negative input terminal of the low noise preamplifier Q2, and the other end is grounded GND via the second DC blocking capacitor C2, and one end of the third DC blocking capacitor C3 is connected to the output terminal of the low noise preamplifier Q2, and the other end is grounded GND. Herein, the adjustment of the gain of the low noise preamplifier Q2 can be realized by changing the resistance values of the feedback resistor Rf and the grounding resistor Rg.
The output voltage signal of the metal gate MOSFET terahertz detector based on a periodically rasterized gate of the present invention is a DC voltage signal, and the magnitude of the DC voltage signal is proportional to the radiation intensity of the terahertz signal, so that the intensity information of the incident terahertz signal can be obtained according to the magnitude of the output voltage signal of the terahertz detector, thereby realizing terahertz detection.
Although the functions and working processes of the present invention have been described above with reference to the accompanying drawings, the present invention is not limited to the specific functions and working processes described above, and the specific embodiments described above are merely illustrative and |
| ! ; | BL-5113 LU101402 not limiting. Many forms may be made by an ordinary person skilled in the art under the inspiration of the present invention, without departing from the gist of the present invention and the scope protected by the claims, and all of these are within the protection of the present invention.
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Claims (2)
1. A metal gate MOSFET terahertz detector based on a periodically rasterized gate, characterized in that it comprises a metal gate MOSFET (Q1) having the periodically rasterized gate and various different pattern forms thereof, a low noise preamplifier (Q2) and a voltage feedback loop; wherein the gate of the metal gate MOSFET (Q1) is used for receiving a terahertz signal, and the gate of the metal gate MOSFET (Q1) is connected to a first bias voltage source (Vb1) via a first bias resistor (Rb1), a source of the metal gate MOSFET (Q1) is grounded (GND), wherein a first DC blocking capacitor (C1) is connected between a drain of the metal gate MOSFET (Q1) and a positive input terminal of the low noise preamplifier (Q2), and the positive input terminal of the low noise preamplifier (Q2) is connected to a second bias voltage source (Vb2) via a second bias resistor (Rb2); and the voltage feedback loop comprises a feedback resistor (Rf), a grounding resistor (Rg), a second DC blocking capacitor (C2), and a third DC blocking capacitor (C3), wherein the feedback resistor (Rf) is connected between an output terminal and a negative input terminal of the low noise preamplifier (Q2), wherein one end of the grounding resistor (Rg) is connected to the negative input terminal of the low noise preamplifier (Q2) and the other end is grounded (GND) via the second DC blocking capacitor (C2), and one end of the third DC blocking capacitor (C3) is connected to the output terminal of the low noise preamplifier (Q2) and the other end is grounded (GND).
2. The metal gate MOSFET terahertz detector based on the periodically rasterized gate according to claim 1, characterized in that the first bias voltage source (Vb1) and the first bias resistor (Rb1) are used for supplying DC power to the metal gate
BL-5113 LU101402 MOSFET (Q1), and a THz response wave-band range is adjusted by adjusting rasterized structure parameters (width, length, region area, period, and pattern form of grating) of the gate of the metal gate MOSFET (Q1).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811456308.1A CN109541712B (en) | 2018-11-30 | 2018-11-30 | Metal gate MOSFET terahertz detector based on periodic grating gate |
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| CN112268616B (en) * | 2020-09-03 | 2024-04-05 | 广东工业大学 | N X M terahertz detector array imaging system based on Schottky contact grating structure |
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| DE102004017165B4 (en) * | 2004-04-01 | 2012-09-06 | Atmel Automotive Gmbh | Circuit for increasing the transit frequency of an amplifier element |
| US7420225B1 (en) * | 2005-11-30 | 2008-09-02 | Sandia Corporation | Direct detector for terahertz radiation |
| CN100465676C (en) * | 2007-04-17 | 2009-03-04 | 浙江大学 | Prague grate and MOS structure based wavelength selection light switch |
| CN101377462A (en) * | 2008-09-18 | 2009-03-04 | 阮双琛 | THz wave detector, detecting system and method |
| JP5962167B2 (en) * | 2012-04-19 | 2016-08-03 | セイコーエプソン株式会社 | Detection circuit, sensor device and electronic device |
| CN102680091B (en) * | 2012-06-12 | 2014-03-12 | 中国科学院上海微系统与信息技术研究所 | High-speed detection method and device for terahertz |
| CN103162839B (en) * | 2013-03-25 | 2014-10-22 | 南京大学 | Reading circuit for Nb5 N6 normal temperature Terahertz detector linear array |
| JP6486695B2 (en) * | 2015-01-14 | 2019-03-20 | 浜松ホトニクス株式会社 | Bolometer type THz detector |
| US9574945B2 (en) * | 2015-04-15 | 2017-02-21 | University Of Rochester | THz radiation detection in standard CMOS technologies based on thermionic emission |
| CN105336809B (en) * | 2015-11-09 | 2017-10-20 | 中国工程物理研究院电子工程研究所 | Terahertz wave detector with arrays of conductive channel structure |
| CN105938012B (en) * | 2016-06-28 | 2018-03-27 | 深圳市太赫兹系统设备有限公司 | Terahertz detection device |
| CN108321162A (en) * | 2018-02-05 | 2018-07-24 | 湖南师范大学 | Improve the bipolar structure optical grid pixel device and preparation method thereof of blue light quick response |
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| CN109541712B (en) | 2020-07-28 |
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