LT2591495T - Puslaidininkinio elemento kraštinės konstrukcijos gamybos įrenginys ir būdas - Google Patents
Puslaidininkinio elemento kraštinės konstrukcijos gamybos įrenginys ir būdasInfo
- Publication number
- LT2591495T LT2591495T LTEP11727469.6T LT11727469T LT2591495T LT 2591495 T LT2591495 T LT 2591495T LT 11727469 T LT11727469 T LT 11727469T LT 2591495 T LT2591495 T LT 2591495T
- Authority
- LT
- Lithuania
- Prior art keywords
- producing
- semiconductor component
- edge structure
- edge
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102010017751A DE102010017751A1 (de) | 2010-07-06 | 2010-07-06 | Verfahren und Vorrichtung zur Herstellung einer Randstruktur eines Halbleiterbauelements |
PCT/EP2011/060697 WO2012004147A1 (de) | 2010-07-06 | 2011-06-27 | Verfahren und vorrichtung zur herstellung einer randstruktur eines halbleiterbauelements |
Publications (1)
Publication Number | Publication Date |
---|---|
LT2591495T true LT2591495T (lt) | 2019-06-25 |
Family
ID=44280735
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
LTEP11727469.6T LT2591495T (lt) | 2010-07-06 | 2011-06-27 | Puslaidininkinio elemento kraštinės konstrukcijos gamybos įrenginys ir būdas |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP2591495B1 (lt) |
DE (1) | DE102010017751A1 (lt) |
LT (1) | LT2591495T (lt) |
RU (1) | RU2530454C1 (lt) |
WO (1) | WO2012004147A1 (lt) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011087473A1 (de) | 2011-11-30 | 2013-06-06 | Infineon Technologies Bipolar Gmbh & Co. Kg | Verfahren zur Dotierung eines Halbleiterkörpers und Halbleiterbauelement |
DE102021116206B3 (de) | 2021-06-23 | 2022-09-29 | Infineon Technologies Bipolar Gmbh & Co. Kg | Verfahren und Vorrichtung zur Herstellung einer Randstruktur eines Halbleiterbauelements |
CN114695210B (zh) * | 2022-06-02 | 2022-09-09 | 西安奕斯伟材料科技有限公司 | 一种用于硅片边缘刻蚀的装置和方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1208413B (de) * | 1959-11-21 | 1966-01-05 | Siemens Ag | Verfahren zum Herstellen von flaechenhaften pn-UEbergaengen an Halbleiterbauelementen |
JPS6445168A (en) * | 1987-08-13 | 1989-02-17 | Toyoda Automatic Loom Works | Manufacture of high breakdown voltage semiconductor element |
JP2719855B2 (ja) * | 1991-05-24 | 1998-02-25 | 信越半導体株式会社 | ウエーハ外周の鏡面面取り装置 |
DE19854743A1 (de) * | 1998-11-27 | 2000-06-08 | Sez Semiconduct Equip Zubehoer | Vorrichtung zum Naßätzen einer Kante einer Halbleiterscheibe |
US6516815B1 (en) * | 1999-07-09 | 2003-02-11 | Applied Materials, Inc. | Edge bead removal/spin rinse dry (EBR/SRD) module |
RU2163408C1 (ru) * | 2000-02-08 | 2001-02-20 | Воронежская государственная технологическая академия | Устройство для снятия фаски при финишной обработке полупроводниковых пластин |
JP4179592B2 (ja) * | 2002-08-21 | 2008-11-12 | 大日本スクリーン製造株式会社 | 基板周縁処理装置および基板周縁処理方法 |
DE10302611B4 (de) * | 2003-01-23 | 2011-07-07 | Siltronic AG, 81737 | Polierte Halbleiterscheibe und Verfahren zu deren Herstellung und Anordnung bestehend aus einer Halbleiterscheibe und einem Schild |
DE102004045768B4 (de) | 2004-09-21 | 2007-01-04 | Infineon Technologies Ag | Verfahren zur Herstellung eines Randabschlusses eines Halbleiterbauelements |
KR100618868B1 (ko) * | 2004-10-19 | 2006-08-31 | 삼성전자주식회사 | 스핀 장치 |
JP4601452B2 (ja) * | 2005-02-22 | 2010-12-22 | 大日本スクリーン製造株式会社 | 基板処理装置 |
DE102005028166A1 (de) * | 2005-06-17 | 2005-11-24 | Siltronic Ag | Verfahren und Vorrichtung zur Behandlung einer Halbleiterscheibe mit einem Ätzmedium |
US7972969B2 (en) * | 2008-03-06 | 2011-07-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for thinning a substrate |
JP5012632B2 (ja) * | 2008-04-15 | 2012-08-29 | 富士電機株式会社 | 半導体装置の製造方法 |
-
2010
- 2010-07-06 DE DE102010017751A patent/DE102010017751A1/de not_active Withdrawn
-
2011
- 2011-06-27 LT LTEP11727469.6T patent/LT2591495T/lt unknown
- 2011-06-27 WO PCT/EP2011/060697 patent/WO2012004147A1/de active Application Filing
- 2011-06-27 EP EP11727469.6A patent/EP2591495B1/de active Active
- 2011-06-27 RU RU2013104889/28A patent/RU2530454C1/ru active
Also Published As
Publication number | Publication date |
---|---|
DE102010017751A1 (de) | 2012-01-12 |
RU2530454C1 (ru) | 2014-10-10 |
EP2591495B1 (de) | 2019-04-17 |
WO2012004147A1 (de) | 2012-01-12 |
RU2013104889A (ru) | 2014-09-27 |
EP2591495A1 (de) | 2013-05-15 |
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