LT2021565A - Puslaidininkinis šviesos šaltinis - Google Patents

Puslaidininkinis šviesos šaltinis

Info

Publication number
LT2021565A
LT2021565A LT2021565A LT2021565A LT2021565A LT 2021565 A LT2021565 A LT 2021565A LT 2021565 A LT2021565 A LT 2021565A LT 2021565 A LT2021565 A LT 2021565A LT 2021565 A LT2021565 A LT 2021565A
Authority
LT
Lithuania
Prior art keywords
quantum well
layers
semiconductor
light source
semiconductor material
Prior art date
Application number
LT2021565A
Other languages
English (en)
Other versions
LT6997B (lt
Inventor
Arūnas KROTKUS
Vaidas PAČEBUTAS
Vytautas KARPUS
Original Assignee
Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras filed Critical Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras
Priority to LT2021565A priority Critical patent/LT6997B/lt
Publication of LT2021565A publication Critical patent/LT2021565A/lt
Publication of LT6997B publication Critical patent/LT6997B/lt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Šis išradimas priklauso puslaidininkinių šviesos šaltinių sričiai ir gali būti naudojamas artimojo ir viduriniojo infraraudonojo diapazono šviesos ir lazeriniuose dioduose. Pasiūlytas šaltinis apima padėklą iš puslaidininkinės medžiagos, šviesą skleidžiantį sluoksniuotą darinį, užaugintą ant padėklo, kur sluoksniuotas darinys apima: a) kvantinės duobės sluoksnį, pagamintą iš pirmosios puslaidininkinės medžiagos, b) du apauginimo sluoksnius, išdėstytus iš abiejų kvantinės duobės sluoksnio pusių ir pagamintus iš antrosios puslaidininkinės medžiagos, c) du barjero sluoksnius, išdėstytus, atitinkamai, ant minėtų apsauginių sluoksnių, pagamintus iš trečiosios puslaidininkinės medžiagos, kur kvantinės duobės sluoksniai iš pirmosios medžiagos turi savyje bismuto atomų.
LT2021565A 2021-10-25 2021-10-25 Puslaidininkinis šviesos šaltinis LT6997B (lt)

Priority Applications (1)

Application Number Priority Date Filing Date Title
LT2021565A LT6997B (lt) 2021-10-25 2021-10-25 Puslaidininkinis šviesos šaltinis

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
LT2021565A LT6997B (lt) 2021-10-25 2021-10-25 Puslaidininkinis šviesos šaltinis

Publications (2)

Publication Number Publication Date
LT2021565A true LT2021565A (lt) 2023-05-10
LT6997B LT6997B (lt) 2023-06-12

Family

ID=80225758

Family Applications (1)

Application Number Title Priority Date Filing Date
LT2021565A LT6997B (lt) 2021-10-25 2021-10-25 Puslaidininkinis šviesos šaltinis

Country Status (1)

Country Link
LT (1) LT6997B (lt)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006044314A1 (en) * 2004-10-12 2006-04-27 Alfalight Inc Semiconductor laser diode
CN103401144B (zh) * 2013-08-13 2015-12-23 中国科学院苏州纳米技术与纳米仿生研究所 红外半导体激光器有源区、半导体激光器及其制作方法

Also Published As

Publication number Publication date
LT6997B (lt) 2023-06-12

Similar Documents

Publication Publication Date Title
TW200507301A (en) Heterostructures for III-nitride light emitting devices
TW200910655A (en) Radiation-emitting semiconductor body
MY119108A (en) Group iii nitride light emitting devices with gallium-free layers
TW200711243A (en) Semiconductor laser device and method for fabricating the same
KR960026992A (ko) 질화물 반도체 발광 소자 및 질화물 반도체 발광 다이오드
JP2009212523A (ja) Ｉｉｉ族窒素化合物半導体発光ダイオード
TW200707805A (en) Nitride semiconductor light emitting element
WO2009014076A1 (ja) 受光デバイス
WO2021086941A8 (en) Red micro-led with dopants in active region
JP2004253801A5 (lt)
TWI597862B (zh) 具阻障層的光電半導體元件
TW200514285A (en) Nitride semiconductro; light-emitting device, light-emitting diode, laser device and lamp using the semiconductor; and production methods thereof
LT2021565A (lt) Puslaidininkinis šviesos šaltinis
EP3855513A3 (en) Semiconductor led and method of manufacturing the same
JP2004253802A5 (lt)
KR101439652B1 (ko) 초격자층을 가지는 발광 다이오드
TWI639252B (zh) 具阻障層的光電半導體元件
US20140225123A1 (en) REO/ALO/AlN TEMPLATE FOR III-N MATERIAL GROWTH ON SILICON
JP6996436B2 (ja) 層状物質積層構造およびその作製方法
TWI613838B (zh) 發光元件
TW480751B (en) Semiconductor light emitting diode based on off-cut substrate
TW550840B (en) Light emitting diode device
JPH01243483A (ja) 半導体発光装置
Kuskovsky et al. Photoluminescence of δ-doped ZnSe:(Te, N) grown by molecular beam epitaxy
WO2022164338A9 (ru) Светоизлучающий диод на кремниевой подложке

Legal Events

Date Code Title Description
BB1A Patent application published

Effective date: 20230510

FG9A Patent granted

Effective date: 20230612