KR980006497A - Humidity Sensing Field Effect Transistor and Manufacturing Method Thereof - Google Patents

Humidity Sensing Field Effect Transistor and Manufacturing Method Thereof Download PDF

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Publication number
KR980006497A
KR980006497A KR1019960020335A KR19960020335A KR980006497A KR 980006497 A KR980006497 A KR 980006497A KR 1019960020335 A KR1019960020335 A KR 1019960020335A KR 19960020335 A KR19960020335 A KR 19960020335A KR 980006497 A KR980006497 A KR 980006497A
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film
effect transistor
field effect
porous
humidity sensing
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KR1019960020335A
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Korean (ko)
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KR100225788B1 (en
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이성필
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손병기
경북대학교 센서기술연구소
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823412—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823892—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

본 발명은 습도감지 전계효과트랜지스터에 관한 것으로, n형(100) 실리콘기판(1)에 소자의 전기적 분리를 위해 P형웰(2)을 만들고 P형웰(2) 안에 n채널 MISFET를 제조하여 게이트절연영역에 Si3N4(3)를 증착시켜 Si3N4(3)/SiO2막(4)을 형성시키는 단계와, 상기 Si3N4(3)/SiO2막(4) 위에 스퍼터로 TiO2막(5)을 정착시키고 리프트-오프 후 열처리하는 단계, 열처리후 물분자가 투과할 수 있는 다공질크롬(Cr;6)과 다공질금(Au;7)을 다공질 금속층으로 증착하는 단계 및, 게이트의 습도감지영역을 제외한 게이트전극, 소스 및 드레인에 1~2㎛의 2차 Au(8)를 증착하는 단계로 이루어져 마이크로 데트놀리지를 이용하여 만든 전계효과트랜지스터 습도센서로서 규격화가 쉽고, 응답속도가 빠르며, 열적으로 안정성이 뛰어나고, 집적화되어 있기 때문에 멀티센서가 용이하여 널리 이용될 수 있는 장점이 있는 습도감지 전계효과트랜지스터 및 그 제조방법이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a humidity sensing field effect transistor, comprising a p-type well (2) for the electrical isolation of devices in an n-type (100) silicon substrate (1) and an n-channel MISFET in the p-type well (2) to insulate the gate by depositing a Si 3 N 4 (3) in the region by sputtering on Si 3 N 4 (3) / SiO phase and the Si 3 N 4 (3) / SiO 2 film 4 to 2 to form a film 4 Fixing the TiO 2 film 5 and then performing heat treatment after lift-off; depositing porous chromium (Cr; 6) and porous gold (Au; 7) through which the water molecules can permeate after the heat treatment as a porous metal layer; It is a field effect transistor humidity sensor made by using micro digital technology, which consists of depositing 1 ~ 2㎛ secondary Au (8) on the gate electrode, source, and drain except the humidity sensing area of the gate. Fast, thermally stable, integrated, multi-sensor Li in the advantage that can be used humidity sensing field effect transistor and a method of manufacturing the same.

Description

습도감지 전계효과트랜지스터 및 그 제조방법Humidity Sensing Field Effect Transistor and Manufacturing Method Thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명 습도감지 전계효과트랜지스터의 제조공정을 나타낸 단면도.1 is a cross-sectional view showing the manufacturing process of the humidity sensing field effect transistor of the present invention.

Claims (6)

n형실리콘기판(1)의 상부에 P형웰(2)을 형성하여서 구성된 n채널 MISFET의 게이트 절연영역인 Si3N4(3)/SiO2막(4) 위에 습도감지용 물질로서 TiO2막(5)을 정착시키고, TiO2막(5)상에 물분자가 투과할 수 있는 다공질 크롬(porous chromium;6)과 다공질금(porous gold;7)을 형성하여서 된 습도감지 전계효과트랜지스터.TiO 2 film as a humidity sensing material on Si 3 N 4 (3) / SiO 2 film 4 , which is a gate insulation region of an n-channel MISFET formed by forming a P-type well 2 on the n-type silicon substrate 1. (5) and a humidity sensing field effect transistor formed by forming porous chromium (6) and porous gold (7) through which water molecules can permeate on the TiO 2 membrane (5). n형(100) 실리콘기판(1)에 소자의 전기적 분리를 위해 P형웰(2)을 만들고 P형웰(2) 안에 n채널 MISFET를 제조하여 게이트절연영역에 Si3N4(3)를 증착시켜 Si3N4(3)/SiO2막(4)을 형성시키는 단계와, 상기 Si3N4(3)/SiO2막(4) 위에 스퍼트로 TiO2막(5)을 정착시키고 리프트-오프 후 열처리하는 단계, 열처리후 물분자가 투과할 수 있는 다공질크롬(Cr;6)과 다공질금(Au;7)을 다공질 금속층으로 증착하는 단계 및, 게이트의 습도감지영역을 제외한 게이트전극, 소스 및 드레인에 1~2㎛의 2차 Au(8)를 증착하는 단계로 이루어짐을 특징으로 하는 습도감지 전계효과트랜지스터 제조방법.P-type wells (2) are made in the n-type (100) silicon substrate (1) for the electrical isolation of devices, and n-channel MISFETs are fabricated in the P-type wells (2) to deposit Si 3 N 4 (3) in the gate insulation region. Si 3 N 4 (3) / SiO 2 fix the film 4; and the Si 3 N 4 (3) / SiO 2 film 4, TiO 2 film (5) to spurt over to form and the lift-off After the heat treatment, depositing the porous chromium (Cr; 6) and the porous gold (Au; 7) through which the water molecules can pass through the porous metal layer, and the gate electrode, source, and other than the humidity sensing region of the gate. Humidity sensing field effect transistor manufacturing method comprising the step of depositing a second Au (8) of 1 ~ 2㎛ in the drain. 제2항에 있어서, Si3N4(3)/SiO2막(4) 상에 TiO2막(5)을 500~1000Å 증착시켜 500℃~700℃의 산소분위기에서 열처리하는 것을 특징으로 하는 습도감지 전계효과트랜지스터 제조방법.The humidity of claim 2, wherein the TiO 2 film 5 is deposited on the Si 3 N 4 (3) / SiO 2 film 4 at 500 to 1000 Pa, and heat-treated in an oxygen atmosphere at 500 to 700 ° C. Method for manufacturing sensing field effect transistor. 제2항에 있어서, TiO2막(5) 상에 Cr(6)을 50Å~150Å증착하는 것을 특징으로 하는 습도감지 전계효과트랜지스터 제조방법.The method of manufacturing a humidity sensing field effect transistor according to claim 2, wherein Cr (6) is deposited on the TiO 2 film (50) by 50 kPa to 150 kPa. 제2항에 있어서, 다공질 Cr(6)상에 다공질 Au(7)를 500Å이하의 두께로 증착시키는 것을 특징으로 하는 습도감지 전계효과트랜지스터 제조방법.The method for manufacturing a humidity sensing field effect transistor according to claim 2, wherein the porous Au (7) is deposited on the porous Cr (6) to a thickness of 500 kPa or less. 제2항에 있어서, 다공질 Au(7) 상에 다공질 Au(8)를 1~2㎛증착시켜 450℃~ 550℃에서 4~6분간 열처리하는 것을 특징으로 하는 습도감지 전계효과트랜지스터 제조방법.The method for manufacturing a humidity sensing field effect transistor according to claim 2, wherein the porous Au (8) is deposited on the porous Au (1) by 1 to 2 µm and heat-treated at 450 to 550 ° C. for 4 to 6 minutes.
KR1019960020335A 1996-06-07 1996-06-07 Field effect transistor for a humidity sensor and manufacturing method thereof KR100225788B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100593131B1 (en) * 1999-12-22 2006-06-26 주식회사 하이닉스반도체 Method of manufacturing a semiconductor device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040024134A (en) * 2002-09-13 2004-03-20 학교법인 한양학원 High-precise capacitive humidity sensor and methodo of manufacturing the same
KR100676088B1 (en) * 2005-03-23 2007-02-01 (주)에스와이하이테크 Capacitive humidity sensor and method of manufacturing thereof
KR100877246B1 (en) 2007-05-03 2009-01-13 주식회사 바이오트론 A FET sensor and production method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100593131B1 (en) * 1999-12-22 2006-06-26 주식회사 하이닉스반도체 Method of manufacturing a semiconductor device

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