KR980006360A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
KR980006360A
KR980006360A KR1019960024549A KR19960024549A KR980006360A KR 980006360 A KR980006360 A KR 980006360A KR 1019960024549 A KR1019960024549 A KR 1019960024549A KR 19960024549 A KR19960024549 A KR 19960024549A KR 980006360 A KR980006360 A KR 980006360A
Authority
KR
South Korea
Prior art keywords
gate electrode
semiconductor device
active region
short channel
oxide film
Prior art date
Application number
KR1019960024549A
Other languages
Korean (ko)
Inventor
박진요
전배근
양예석
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019960024549A priority Critical patent/KR980006360A/en
Publication of KR980006360A publication Critical patent/KR980006360A/en

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Abstract

단채널 현상이 방지되고, 개선된 액티브 영역을 갖는 반도체 디바이스가 개신된다. 개시된 본 발명은, 반도체 소자가 형성되며, 필드 산화막이 형성됨에 의하여 한정되는 액티브 영역; 액티브 영역을 지나며, 반도체 디바이스의 구동 전압이 인가되는 직선형태의 게이트 전극을 포함하며, 액티브 영역은 게이트 전극과 직교하는 동시에 게이트 전극이 형성되는 부위는 게이트 전극과 평행하게 수직으로 절곡되는 것을 특징으로 한다. 본 발명에 의하면, 실질적인 채널 길이가 증가되어 단채널 현상을 방지할 수 있다.A short channel phenomenon is prevented, and a semiconductor device having an improved active region is refurbished. The disclosed invention relates to an active region formed with a semiconductor device and defined by the formation of a field oxide film; Wherein the active region is perpendicular to the gate electrode and the portion where the gate electrode is formed is perpendicularly bent in parallel with the gate electrode. do. According to the present invention, a substantial channel length is increased to prevent a short channel phenomenon.

Description

반도체 디바이스Semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제2도는 본 발명의 반도체 디바이스의 나타낸 평면도.FIG. 2 is a plan view of a semiconductor device of the present invention. FIG.

Claims (2)

반도체 소자가 형성되며, 필드 산화막이 형성됨에 의하여 한정되는 액티브 영역; 상기 액티브 영역을 지나며, 반도체 디바이스의 구동 전압이 인가되는 직선형태의 게이트 전극을 포함하며, 상기 액티브 영역은 게이트 전극과 직교하는 동시에 게이트 전극이 형성되는 부위는 게이트 전극과 평행하게 수직으로 절곡되는 것을 특징으로 하는 반도체 디바이스.An active region formed with a semiconductor device and defined by formation of a field oxide film; The active region is perpendicular to the gate electrode and the portion where the gate electrode is formed is bent perpendicularly in parallel with the gate electrode. . 제1항에 있어서, 상기 게이트 전극이 형성되는 액티브 영역의 폭은 게이트 전극의 폭보다 작은 것을 특징으로 하는 반도체 디바이스.The semiconductor device according to claim 1, wherein a width of an active region in which the gate electrode is formed is smaller than a width of the gate electrode.
KR1019960024549A 1996-06-27 1996-06-27 Semiconductor device KR980006360A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960024549A KR980006360A (en) 1996-06-27 1996-06-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960024549A KR980006360A (en) 1996-06-27 1996-06-27 Semiconductor device

Publications (1)

Publication Number Publication Date
KR980006360A true KR980006360A (en) 1998-03-30

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ID=66240369

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960024549A KR980006360A (en) 1996-06-27 1996-06-27 Semiconductor device

Country Status (1)

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KR (1) KR980006360A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8338870B2 (en) 2009-01-05 2012-12-25 Hynix Semiconductor Inc. Layout of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8338870B2 (en) 2009-01-05 2012-12-25 Hynix Semiconductor Inc. Layout of semiconductor device

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