KR950015801A - Structure of Thin Film Transistor - Google Patents
Structure of Thin Film Transistor Download PDFInfo
- Publication number
- KR950015801A KR950015801A KR1019930023720A KR930023720A KR950015801A KR 950015801 A KR950015801 A KR 950015801A KR 1019930023720 A KR1019930023720 A KR 1019930023720A KR 930023720 A KR930023720 A KR 930023720A KR 950015801 A KR950015801 A KR 950015801A
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- South Korea
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- region
- source
- active layer
- thin film
- film transistor
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- Thin Film Transistor (AREA)
Abstract
본 발명은 박막트랜지스터의 구조에 관한것으로, 박막트랜지스터의 차단전류는 낮추되 온 전류가 감소되지 않도록 LDD영역을 형성함에 있어 종래기술에서 미스 얼라인(Allign)에 의해 발생되는 소오스 및 드레인의 영역폭변화를 방지하기 위해 버퍼층의 선택영역을 테이퍼 에치하여 리세스영역을 형성한 후, 리세스영역에 걸쳐 일정폭을 갖는 활성층을 형성하고 게이트절연막을 형성한 다음 리세스영역의 양측경사부분의 일정부분에 걸쳐 게이트를 형성한다. 이어 이온주입공정을 실시하여 활성층중 평면부분에는 고농도의 불순물이 주입되어 소오스 및 드레인영역이 형성되고, 경사진부분에는 LDD영역이 동시에 형성되도록하여 미스 얼라인의 문제점이 해소되고 공정의 단순화가 이루어진다.The present invention relates to a structure of a thin film transistor, wherein the blocking current of the thin film transistor is lowered, but in forming the LDD region so that the on-current is not reduced, the source and drain regions of the source and drain generated by misalignment in the prior art. In order to prevent the change, the recessed region is formed by tapering the selected region of the buffer layer, and then an active layer having a predetermined width is formed over the recessed region, a gate insulating film is formed, and a predetermined portion of both inclined portions of the recessed region Form a gate over. Subsequently, a high concentration of impurities are implanted into the planar portion of the active layer to form a source and a drain region, and an LDD region is formed simultaneously on the inclined portion to solve the problem of misalignment and simplify the process. .
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도(A) 내지 (B)는 본 발명의 박막트랜지스터 공정단면도,2 (A) to (B) is a cross-sectional view of the thin film transistor process of the present invention,
제3도는 제2도의 경사부분확대도.3 is an enlarged view of the inclined portion of FIG.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930023720A KR950015801A (en) | 1993-11-09 | 1993-11-09 | Structure of Thin Film Transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930023720A KR950015801A (en) | 1993-11-09 | 1993-11-09 | Structure of Thin Film Transistor |
Publications (1)
Publication Number | Publication Date |
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KR950015801A true KR950015801A (en) | 1995-06-17 |
Family
ID=66825412
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930023720A KR950015801A (en) | 1993-11-09 | 1993-11-09 | Structure of Thin Film Transistor |
Country Status (1)
Country | Link |
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KR (1) | KR950015801A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100426688B1 (en) * | 2002-01-29 | 2004-04-13 | 일진다이아몬드(주) | Thin film transistor for liquid crystal display (LCD) and Method of manufacturing the same |
-
1993
- 1993-11-09 KR KR1019930023720A patent/KR950015801A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100426688B1 (en) * | 2002-01-29 | 2004-04-13 | 일진다이아몬드(주) | Thin film transistor for liquid crystal display (LCD) and Method of manufacturing the same |
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