KR980006229A - Protection element of semiconductor device - Google Patents

Protection element of semiconductor device Download PDF

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Publication number
KR980006229A
KR980006229A KR1019960024422A KR19960024422A KR980006229A KR 980006229 A KR980006229 A KR 980006229A KR 1019960024422 A KR1019960024422 A KR 1019960024422A KR 19960024422 A KR19960024422 A KR 19960024422A KR 980006229 A KR980006229 A KR 980006229A
Authority
KR
South Korea
Prior art keywords
protection device
region
semiconductor device
base region
base
Prior art date
Application number
KR1019960024422A
Other languages
Korean (ko)
Other versions
KR100228276B1 (en
Inventor
함석헌
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019960024422A priority Critical patent/KR100228276B1/en
Publication of KR980006229A publication Critical patent/KR980006229A/en
Application granted granted Critical
Publication of KR100228276B1 publication Critical patent/KR100228276B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0296—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices involving a specific disposition of the protective devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

본 발명은 반도체 장치의 보호 소자에 관한 것으로서, 더욱 상세하게는 정전기 스트레스로부터 반도체 장치를 보호하는 보호 소자에 관한 것이다. 보호 소자로 사용되는 수직형 npn 쌍극성 트랜지스터의 베이스 영역과 컬렉터 싱크 영역을 접하게 한다. 이때 베이스 영역을 고농도로 형성함으로써 베이스 핀치 저항을 줄인다. 이와 같이 하면 보호 소자의 턴온 전압을 낮추고 효율적인 방전을 통하여 정전기 수준을 향상시킬 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a protection device for a semiconductor device, and more particularly, to a protection device for protecting a semiconductor device from static electricity stress. The base region of the vertical npn bipolar transistor used as a protection device is brought into contact with the collector sink region. At this time, the base pinch resistance is reduced by forming the base region at a high concentration. In this way, the turn-on voltage of the protection device can be lowered and the level of static electricity can be improved through efficient discharge.

Description

반도체 장치의 보호 소자Protection element of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

Claims (5)

제1도전형의 반도체층, 상기 반도체층에 형성되어 있으며 상기 반도체층보다 고농도인 제1도전형의 컬렉터 싱크 영역, 상기 반도체층에 상기 컬렉터 싱크 영역과 접하도록 형성되어 있는 제2 도전형의 베이스 영역 그리고 상기 베이스 영역에 형성되어 있는 제1 도전형의 이미터 영역을 포함하는 반도체 장치의 보호 소자.A second conductive type semiconductor layer formed on the semiconductor layer and having a concentration higher than that of the semiconductor layer, a second conductivity type collector sink region formed on the semiconductor layer in contact with the collector sink region, And an emitter region of the first conductivity type formed in the base region. 제1항에서, 상기 베이스 영역 및 이미터 영역은 상기 컬렉터 싱크 영역에 대하여 대칭으로 형성되어 있는 반도체 장치의 보호 소자.The protection device of claim 1, wherein the base region and the emitter region are formed symmetrically with respect to the collector sink region. 제1항에서, 상기 컬렉터 싱크 영역은 상기 반도체 장치의 패드와 연결되어 있으며 상기 베이스 영역 및 상기 이미터 영역은 접지되어 있는 반도체 장치의 보호 소자.2. The protection device of claim 1, wherein the collector sink region is connected to a pad of the semiconductor device and the base region and the emitter region are grounded. 제1항에서, 상기 제1 도전형은 n형이고 상기 제2도전형은 p형인 반도체 장치의 보호 소자.2. The protection device of claim 1, wherein the first conductivity type is n-type and the second conductivity type is p-type. 제1항에서, 상기 베이스 영역은 고농도인 반도체 장치의 보호 소자.2. The protection device of claim 1, wherein the base region is a high concentration.
KR1019960024422A 1996-06-27 1996-06-27 Protection device of semiconductor device KR100228276B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960024422A KR100228276B1 (en) 1996-06-27 1996-06-27 Protection device of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960024422A KR100228276B1 (en) 1996-06-27 1996-06-27 Protection device of semiconductor device

Publications (2)

Publication Number Publication Date
KR980006229A true KR980006229A (en) 1998-03-30
KR100228276B1 KR100228276B1 (en) 1999-11-01

Family

ID=19463822

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960024422A KR100228276B1 (en) 1996-06-27 1996-06-27 Protection device of semiconductor device

Country Status (1)

Country Link
KR (1) KR100228276B1 (en)

Also Published As

Publication number Publication date
KR100228276B1 (en) 1999-11-01

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