KR980005188A - Manufacturing method of triode edge type diamond field emitter - Google Patents

Manufacturing method of triode edge type diamond field emitter Download PDF

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Publication number
KR980005188A
KR980005188A KR1019960025039A KR19960025039A KR980005188A KR 980005188 A KR980005188 A KR 980005188A KR 1019960025039 A KR1019960025039 A KR 1019960025039A KR 19960025039 A KR19960025039 A KR 19960025039A KR 980005188 A KR980005188 A KR 980005188A
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KR
South Korea
Prior art keywords
diamond
silicon nitride
nitride film
forming
emitter
Prior art date
Application number
KR1019960025039A
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Korean (ko)
Other versions
KR100257700B1 (en
Inventor
김한
최정옥
정효수
Original Assignee
이우복
사단법인 고등기술연구원 연구조합
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Publication date
Application filed by 이우복, 사단법인 고등기술연구원 연구조합 filed Critical 이우복
Priority to KR1019960025039A priority Critical patent/KR100257700B1/en
Publication of KR980005188A publication Critical patent/KR980005188A/en
Application granted granted Critical
Publication of KR100257700B1 publication Critical patent/KR100257700B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
    • H01J2329/02—Electrodes other than control electrodes
    • H01J2329/04—Cathode electrodes
    • H01J2329/0407—Field emission cathodes
    • H01J2329/041—Field emission cathodes characterised by the emitter shape
    • H01J2329/0421—Pillar shaped emitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
    • H01J2329/02—Electrodes other than control electrodes
    • H01J2329/04—Cathode electrodes
    • H01J2329/0407—Field emission cathodes
    • H01J2329/0439—Field emission cathodes characterised by the emitter material
    • H01J2329/0444—Carbon types
    • H01J2329/046—Diamond-like carbon [DLC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
    • H01J2329/02—Electrodes other than control electrodes
    • H01J2329/08—Anode electrodes

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)

Abstract

본 발명은 낮은 전압에서도 많은 전자를 방출시키는 다이아몬드 3극 필드 에미터의 제조방법에 관한 것으로, 특히, 다이아몬드 에미터를 원통형의 에지형 에미터로 제조하여 낮은 접압에서도 높은 전자방출 특성을 나타내는 다이아몬드 필드 에미터를 제조하는 방법을 제공한다.The present invention relates to a method of manufacturing a diamond triode field emitter that emits a large amount of electrons even at a low voltage, and more particularly, to a diamond field emitter which is manufactured by using a cylindrical edge emitter, To provide a method for manufacturing an emitter.

Description

3극 에지형 다이아몬드 필드 에미터의 제조방법Manufacturing method of triode edge type diamond field emitter

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제2a도 내지 제2g도는 본 발명에 따른 3극 구조를 갖는 에지형 다이아몬드 필드 에미터의 제조공정을 순차적으로 나타낸 단면도.Figs. 2a to 2g are sectional views sequentially showing a manufacturing process of an edge type diamond field emitter having a triode structure according to the present invention; Fig.

제3도는 본 발명에 따른 3극 구조를 갖는 에지형 다이아몬드 필드 에미터 어레이의 평면도.Figure 3 is a plan view of an edge type diamond field emitter array having a triode structure according to the present invention;

Claims (3)

하부기판 상부에 캐소드 전극을 형성하는 제1단계와, 제1단계에 의해 형성된 캐소드 전극 상부에 실리콘 질화막을 형성한 후, 반응성이온 식각법으로 비등방성 식각하여 원기둥 모양의 패턴을 형성하는 제2단계와, 제2단계에 의해 형성된 원기둥 모양으로 패턴화된 실리콘 질화막 상부로부터 다이아몬드 박막을 노출된 표면의 모든면에 같은 두께로 등각증착하는 제3단계와, 제3단계에 의해 증착된 캐소드 전극 상부의 다이아몬드 박막과 패턴화된 실리콘 질화막 원기둥 상부의 다이아몬드 박막을 제거하여 원통형의 에지형 다이아몬드 에미터를 형성하는 제4단계와, 제4단계에 의해 노출된 패턴화된 실리콘 질화막 원기둥 상부로 부터 절연체를 등각증착하는 제5단계와, 제5단계에 의해 증착된 에지형 다이아몬드 에미터 주위의 절연체를 부분식각하여 에지형 다이아몬드 에미터와 실리콘 질화막 원기둥의 측면이 완전히 노출되도록 하는 제6단계와, 제6단계에 의해 형성된 절연체 상부에 게이트 전극을 형성하는 제7단계와, 제6단계와 제7단계에 의해 절연체와 게이트 전극이 증착되어 있는 패턴화된 실리콘 질화막을 리프트-오프방법을 사용하여 제거하는 제8단계를 포함하는 3극 에지형 다이아몬드 필드 에미터의 제조방법.A first step of forming a cathode electrode on the lower substrate, a second step of forming a cylindrical pattern by forming a silicon nitride film on the cathode electrode formed by the first step and then anisotropically etching the substrate by reactive ion etching A third step of uniformly depositing the diamond thin film on the exposed surfaces of the silicon nitride film from the upper part of the cylindrical silicon nitride film formed by the second step to the same thickness, A fourth step of forming a cylindrical edge type diamond emitter by removing the diamond thin film and the diamond thin film on the top of the patterned silicon nitride film cylinder, and a fourth step of forming an insulator from the upper part of the patterned silicon nitride film column exposed by the fourth step The fifth step of depositing the diamond-like diamond emitter and the fifth step of epitaxially growing the diamond- A sixth step of completely exposing side surfaces of the topographical diamond emitter and the silicon nitride film cylinder, a seventh step of forming a gate electrode on the insulator formed by the sixth step, And removing the patterned silicon nitride film on which the gate electrode is deposited by using a lift-off method. ≪ Desc / Clms Page number 19 > 제1항에 있어서, 상기 절연체를 부분식각하여 에지형 다이아몬드 에미터를 노출시키는 방법으로 에치백 공정을 사용하는 것을 특징으로 하는 3극 에지형 다이아몬드 필드 에미터의 제조방법.The method of manufacturing a triode edge type diamond field emitter according to claim 1, wherein an etch-back process is used as a method of partially etching the insulator to expose the edge-type diamond emitter. 제1항에 있어서, 상기 다이아몬드는 다이아몬드상 탄소인 것을 특징으로 하는 3극 에지형 다이아몬드 필드 에미터의 제조방법.The method of claim 1, wherein the diamond is diamond-like carbon. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960025039A 1996-06-28 1996-06-28 Method for manufacturing a field emitter of fed KR100257700B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960025039A KR100257700B1 (en) 1996-06-28 1996-06-28 Method for manufacturing a field emitter of fed

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960025039A KR100257700B1 (en) 1996-06-28 1996-06-28 Method for manufacturing a field emitter of fed

Publications (2)

Publication Number Publication Date
KR980005188A true KR980005188A (en) 1998-03-30
KR100257700B1 KR100257700B1 (en) 2000-06-01

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KR1019960025039A KR100257700B1 (en) 1996-06-28 1996-06-28 Method for manufacturing a field emitter of fed

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KR100257700B1 (en) 2000-06-01

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