KR970077494A - Method of manufacturing semiconductor device - Google Patents
Method of manufacturing semiconductor device Download PDFInfo
- Publication number
- KR970077494A KR970077494A KR1019960017614A KR19960017614A KR970077494A KR 970077494 A KR970077494 A KR 970077494A KR 1019960017614 A KR1019960017614 A KR 1019960017614A KR 19960017614 A KR19960017614 A KR 19960017614A KR 970077494 A KR970077494 A KR 970077494A
- Authority
- KR
- South Korea
- Prior art keywords
- polysilicon layer
- oxide film
- layer
- forming
- dry etching
- Prior art date
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- Drying Of Semiconductors (AREA)
Abstract
본 발명은 반도체 소자의 제조방법에 관한 것으로, 질화막을 제거한 후, 핫순수를 이용한 린스처리로 폴리실리콘층의 상부에 얇은 산화막을 형성하므로써 폴리실리콘층 제거시 액티브 에지영역에 보이드에 의한 시릴콘기판의 식각손상을 방지하여 소자의 특성을 향상시킬 수 있는 효과가 있다.The present invention relates to a method of manufacturing a semiconductor device, which comprises forming a thin oxide film on a polysilicon layer by rinsing with hot pure water after removing a nitride film, thereby forming a silicon oxide film on the active edge area, It is possible to prevent the etching damage of the device and improve the characteristics of the device.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제1A 내지 1F도는 본 발명에 따른 반도체 소자의 필드산화막 형성 방법을 설명하기 위한 소자의 단면도.1A to 1F are sectional views of a device for explaining a field oxide film forming method of a semiconductor device according to the present invention.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960017614A KR970077494A (en) | 1996-05-23 | 1996-05-23 | Method of manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960017614A KR970077494A (en) | 1996-05-23 | 1996-05-23 | Method of manufacturing semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970077494A true KR970077494A (en) | 1997-12-12 |
Family
ID=66220252
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960017614A KR970077494A (en) | 1996-05-23 | 1996-05-23 | Method of manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970077494A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100752219B1 (en) * | 2001-12-28 | 2007-08-28 | 매그나칩 반도체 유한회사 | Method for manufacturing isolation of semiconductor device |
-
1996
- 1996-05-23 KR KR1019960017614A patent/KR970077494A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100752219B1 (en) * | 2001-12-28 | 2007-08-28 | 매그나칩 반도체 유한회사 | Method for manufacturing isolation of semiconductor device |
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