KR970077238A - Cleaning liquid of semiconductor substrate and cleaning method using same - Google Patents

Cleaning liquid of semiconductor substrate and cleaning method using same Download PDF

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Publication number
KR970077238A
KR970077238A KR1019960015557A KR19960015557A KR970077238A KR 970077238 A KR970077238 A KR 970077238A KR 1019960015557 A KR1019960015557 A KR 1019960015557A KR 19960015557 A KR19960015557 A KR 19960015557A KR 970077238 A KR970077238 A KR 970077238A
Authority
KR
South Korea
Prior art keywords
semiconductor substrate
cleaning
cleaning liquid
weight
same
Prior art date
Application number
KR1019960015557A
Other languages
Korean (ko)
Inventor
조용준
이문희
송재인
박흥수
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019960015557A priority Critical patent/KR970077238A/en
Publication of KR970077238A publication Critical patent/KR970077238A/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • C11D2111/22—

Abstract

본 발명은 반도체 기판의 세정액 및 이를 이용한 세정 방법에 관한 것으로, 본 발명에 의한 세정액은 10∼99.9중량%의 질산과, 0.1∼25중량%의 플루오르화 붕소산과, 잔량의 에탄올을 포함한다. 본 발명에 의한 세정방법에 의해 상기 세정액을 이용하면 금속층이 노출된 반도체 기판을 효과적으로 세정할 수 있다.The cleaning liquid according to the present invention comprises 10 to 99.9% by weight of nitric acid, 0.1 to 25% by weight of fluoroboric acid, and the remaining amount of ethanol. By using the cleaning liquid by the cleaning method according to the present invention, the semiconductor substrate on which the metal layer is exposed can be effectively cleaned.

Description

반도체 기판의 세정액 및 이를 이용한 세정 방법Cleaning liquid of semiconductor substrate and cleaning method using same

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

Claims (4)

10∼99.9중량%의 질산과 0.1∼25중량%의 플루오르와 붕소산과, 잔량의 에탄올을 포함하는 반도체 기판의 세정액.10 to 99.9% by weight of nitric acid, 0.1 to 25% by weight of fluorine and boronic acid, and the remaining amount of ethanol. 10∼99.9중량%의 질산과 0.1∼25중량%의 플루오르화 붕소산과, 잔량의 에탄올을 포함하는 세정액을 이용하여 반도체 기판을 세정하고, 순수(純水)를 사용하여 상기 반도체 기판을 세정하는 단계를 포함하는 것을 특징으로 하는 반도체 기판의 세정 방법.Cleaning the semiconductor substrate with a cleaning liquid containing 10 to 99.9% by weight of nitric acid, 0.1 to 25% by weight of fluoroboric acid, and a remaining amount of ethanol, and cleaning the semiconductor substrate with pure water And cleaning the semiconductor substrate. 제2항에 있어서, 상기 세정액의 온도는 25∼60℃의 온도를 유지하는 것을 특징으로하는 반도체 장치의 세정 방법.The cleaning method of a semiconductor device according to claim 2, wherein the temperature of the cleaning liquid is maintained at 25 to 60 캜. 10∼99.9중량%의 질산과 0.1∼25중량%의 플루오르화 붕소산을 포함하는 세정액을 이용하여 반도체 기판을 세정하고, 에탄올을 이용하여 상기 반도체 기판을 세정하고, 순수(巡狩)를 사용하여 상기 반도체 기판을 세정하는 단계를 포함하는 것을 특징으로 하는 반도체 기판의 세정 방법.The semiconductor substrate is cleaned using a cleaning liquid containing 10 to 99.9 wt% of nitric acid and 0.1 to 25 wt% of fluoroboric acid, the semiconductor substrate is cleaned with ethanol and cleaned using pure water And cleaning the semiconductor substrate. ≪ RTI ID = 0.0 > 11. < / RTI > ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960015557A 1996-05-11 1996-05-11 Cleaning liquid of semiconductor substrate and cleaning method using same KR970077238A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960015557A KR970077238A (en) 1996-05-11 1996-05-11 Cleaning liquid of semiconductor substrate and cleaning method using same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960015557A KR970077238A (en) 1996-05-11 1996-05-11 Cleaning liquid of semiconductor substrate and cleaning method using same

Publications (1)

Publication Number Publication Date
KR970077238A true KR970077238A (en) 1997-12-12

Family

ID=66220012

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960015557A KR970077238A (en) 1996-05-11 1996-05-11 Cleaning liquid of semiconductor substrate and cleaning method using same

Country Status (1)

Country Link
KR (1) KR970077238A (en)

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