KR970072161A - Method of measuring etch rate of semiconducting film - Google Patents

Method of measuring etch rate of semiconducting film Download PDF

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Publication number
KR970072161A
KR970072161A KR1019960010641A KR19960010641A KR970072161A KR 970072161 A KR970072161 A KR 970072161A KR 1019960010641 A KR1019960010641 A KR 1019960010641A KR 19960010641 A KR19960010641 A KR 19960010641A KR 970072161 A KR970072161 A KR 970072161A
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KR
South Korea
Prior art keywords
film
etch rate
measuring
depositing
etched portion
Prior art date
Application number
KR1019960010641A
Other languages
Korean (ko)
Other versions
KR100188022B1 (en
Inventor
조형석
배종인
이병암
최상봉
Original Assignee
김광호
삼성전자 주식회사
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019960010641A priority Critical patent/KR100188022B1/en
Publication of KR970072161A publication Critical patent/KR970072161A/en
Application granted granted Critical
Publication of KR100188022B1 publication Critical patent/KR100188022B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

본 발명은 반도체 소자의 제조시 각종 막질의 식각 정도를 간단한 방법으로 측정할 수 있도록 한 반도체 구성 막질의 식각률 측정 방법에 관한 것으로, 반도체 기판 상에 막질을 침적하는 단계; 상기 막질상에 포토레지스트를 침적하고 패턴을 형성하는 단계; 상기 포토레지스트 패턴의 개구부를 통하여 하부 막질을 선택적으로 식각하는 단계; 및, 상기 막질의 식각 부분과 식각되지 않은 부분의 두께를 각각 측정하여 막질의 식각률을 구하는 단계를 구비하여 이루어져 있다.The present invention relates to a method of measuring the etch rate of various film qualities in the manufacture of a semiconductor device by a simple method, the method comprising the steps of: depositing a film quality on a semiconductor substrate; Depositing a photoresist on the film and forming a pattern; Selectively etching the underlying film through an opening of the photoresist pattern; And measuring the thickness of the film-like etched portion and the etched portion, respectively, to obtain the etch rate of the film.

이 방법은 막질의 식각률을 2번의 반도체 웨이퍼 로딩에 의해 측정하였던 종래의 방법에 비해, 1번의 웨이퍼 로딩에 의해 식각률 측정을 가능케 함으로써 전반적인 반도체 제조 공정이 보다 간단해지게 되어, 본 발명을 적용하면 반도체 제조의 생산성 및 작업 효율을 향상시킬 수 있게 되는 것이다.This method makes it possible to measure the etching rate by one wafer loading compared with the conventional method in which the film quality is measured by loading two semiconductor wafers, so that the overall semiconductor manufacturing process becomes simpler. As a result, It is possible to improve productivity and productivity of manufacturing.

Description

반도체 구성 막질의 식각률 측정 방법Method of measuring etch rate of semiconducting film

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제2도는 본 발명에 따른 막질의 식각을 측정 순서를 보이는 공정도.FIG. 2 is a process diagram showing the measurement sequence of etching the film according to the present invention; FIG.

Claims (1)

반도체 기판 상에 막질을 침적하는 단계; 상기 막질상에 포토 레지스트를 침적하고 패턴을 형성하는 단계; 상기 포토레지스트 패턴의 개구부를 통하여 하부 막질을 선택적으로 식각하는 단계; 및 상기 막질의 식각 부분과 식각되지 않은 부분의 두께를 각각 측정하여 막질의 식각률을 구하는 단계를 구비하여 이루어진 반도체 구성막질의 식각률 측정 방법.Depositing a film quality on a semiconductor substrate; Depositing a photoresist on the film and forming a pattern; Selectively etching the underlying film through an opening of the photoresist pattern; And measuring a thickness of the film-like etched portion and a thickness of the etched portion of the film-like portion to obtain a film quality etch rate. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960010641A 1996-04-09 1996-04-09 Etching rate measuring method of semiconductor film KR100188022B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960010641A KR100188022B1 (en) 1996-04-09 1996-04-09 Etching rate measuring method of semiconductor film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960010641A KR100188022B1 (en) 1996-04-09 1996-04-09 Etching rate measuring method of semiconductor film

Publications (2)

Publication Number Publication Date
KR970072161A true KR970072161A (en) 1997-11-07
KR100188022B1 KR100188022B1 (en) 1999-06-01

Family

ID=19455340

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960010641A KR100188022B1 (en) 1996-04-09 1996-04-09 Etching rate measuring method of semiconductor film

Country Status (1)

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KR (1) KR100188022B1 (en)

Also Published As

Publication number Publication date
KR100188022B1 (en) 1999-06-01

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