KR970072161A - Method of measuring etch rate of semiconducting film - Google Patents
Method of measuring etch rate of semiconducting film Download PDFInfo
- Publication number
- KR970072161A KR970072161A KR1019960010641A KR19960010641A KR970072161A KR 970072161 A KR970072161 A KR 970072161A KR 1019960010641 A KR1019960010641 A KR 1019960010641A KR 19960010641 A KR19960010641 A KR 19960010641A KR 970072161 A KR970072161 A KR 970072161A
- Authority
- KR
- South Korea
- Prior art keywords
- film
- etch rate
- measuring
- depositing
- etched portion
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract description 6
- 238000005530 etching Methods 0.000 claims abstract description 4
- 239000004065 semiconductor Substances 0.000 claims abstract 5
- 238000000151 deposition Methods 0.000 claims abstract 4
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract 4
- 239000000758 substrate Substances 0.000 claims abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 3
- 235000012431 wafers Nutrition 0.000 abstract 2
- 238000007796 conventional method Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
본 발명은 반도체 소자의 제조시 각종 막질의 식각 정도를 간단한 방법으로 측정할 수 있도록 한 반도체 구성 막질의 식각률 측정 방법에 관한 것으로, 반도체 기판 상에 막질을 침적하는 단계; 상기 막질상에 포토레지스트를 침적하고 패턴을 형성하는 단계; 상기 포토레지스트 패턴의 개구부를 통하여 하부 막질을 선택적으로 식각하는 단계; 및, 상기 막질의 식각 부분과 식각되지 않은 부분의 두께를 각각 측정하여 막질의 식각률을 구하는 단계를 구비하여 이루어져 있다.The present invention relates to a method of measuring the etch rate of various film qualities in the manufacture of a semiconductor device by a simple method, the method comprising the steps of: depositing a film quality on a semiconductor substrate; Depositing a photoresist on the film and forming a pattern; Selectively etching the underlying film through an opening of the photoresist pattern; And measuring the thickness of the film-like etched portion and the etched portion, respectively, to obtain the etch rate of the film.
이 방법은 막질의 식각률을 2번의 반도체 웨이퍼 로딩에 의해 측정하였던 종래의 방법에 비해, 1번의 웨이퍼 로딩에 의해 식각률 측정을 가능케 함으로써 전반적인 반도체 제조 공정이 보다 간단해지게 되어, 본 발명을 적용하면 반도체 제조의 생산성 및 작업 효율을 향상시킬 수 있게 되는 것이다.This method makes it possible to measure the etching rate by one wafer loading compared with the conventional method in which the film quality is measured by loading two semiconductor wafers, so that the overall semiconductor manufacturing process becomes simpler. As a result, It is possible to improve productivity and productivity of manufacturing.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제2도는 본 발명에 따른 막질의 식각을 측정 순서를 보이는 공정도.FIG. 2 is a process diagram showing the measurement sequence of etching the film according to the present invention; FIG.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960010641A KR100188022B1 (en) | 1996-04-09 | 1996-04-09 | Etching rate measuring method of semiconductor film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960010641A KR100188022B1 (en) | 1996-04-09 | 1996-04-09 | Etching rate measuring method of semiconductor film |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970072161A true KR970072161A (en) | 1997-11-07 |
KR100188022B1 KR100188022B1 (en) | 1999-06-01 |
Family
ID=19455340
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960010641A KR100188022B1 (en) | 1996-04-09 | 1996-04-09 | Etching rate measuring method of semiconductor film |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100188022B1 (en) |
-
1996
- 1996-04-09 KR KR1019960010641A patent/KR100188022B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100188022B1 (en) | 1999-06-01 |
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