KR970067658A - Semiconductor photoresist ashing method - Google Patents

Semiconductor photoresist ashing method Download PDF

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Publication number
KR970067658A
KR970067658A KR1019960007071A KR19960007071A KR970067658A KR 970067658 A KR970067658 A KR 970067658A KR 1019960007071 A KR1019960007071 A KR 1019960007071A KR 19960007071 A KR19960007071 A KR 19960007071A KR 970067658 A KR970067658 A KR 970067658A
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KR
South Korea
Prior art keywords
wafer
ashing
ashing method
dummy
wafers
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KR1019960007071A
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Korean (ko)
Inventor
이선훈
이영우
김규동
한준호
Original Assignee
김광호
삼성전자 주식회사
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019960007071A priority Critical patent/KR970067658A/en
Publication of KR970067658A publication Critical patent/KR970067658A/en

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Abstract

반도체 웨이퍼 가공의 애싱방법 가운데 특히 더미 웨이퍼의 사용에 관한 것이다.And more particularly to the use of dummy wafers among ashing methods of semiconductor wafer processing.

본 발명의 애싱방법은 식각공정을 마친 웨이퍼의 잔여 포토레지스트를 산소 플라즈마 분위기에서 제거하는 애싱방법에 있어서, 일단의 적재된 웨이퍼들의 가장자리에 더미 웨이퍼를 설치하고 애싱공정을 마친 공정웨이퍼를 교체하는 일정 회수마다 더미 웨이퍼도 교체하는 것을 특징으로 한다.The ashing method of the present invention is an ashing method for removing residual photoresist of an etched wafer in an oxygen plasma atmosphere. The ashing method includes the steps of providing a dummy wafer on the edge of a stack of wafers, And dummy wafers are also replaced for each number of times.

본 발명에 따르면 애싱공정에서 더미 웨이퍼 사용에 의한 식각물질 누적으로 인하여 애싱공정중 웨이퍼가 과도하게 부식되어 훼손되는 현상을 방지하는 효과를 얻을 수 있다.According to the present invention, it is possible to prevent the wafer from being excessively corroded and damaged during the ashing process due to the accumulation of etching materials by using the dummy wafer in the ashing process.

Description

반도체 포토레지스트 애싱방법Semiconductor photoresist ashing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제2도는 본 발명에 의한 애싱공정에서 웨이퍼 및 더미 웨이퍼(dummy wafer)가 배치된 상태를 나타내는 개략적 도면이다.FIG. 2 is a schematic view showing a state in which a wafer and a dummy wafer are arranged in the ashing process according to the present invention. FIG.

Claims (3)

식각공정을 마친 공정 웨이퍼의 잔여 포토레지스트를 산소 플라즈마 분위기에서 제거하는 반도체 포토레지스트 애싱방법에 있어서, 일단의 적재된 웨이퍼들의 가장자리에 더미 웨이퍼를 설치하고, 애싱공정 전,후의 공정웨이퍼를 교체하는 일정 회수마다 더미 웨이퍼도 교체하는 것을 특징으로 하는 반도체 포토레지스트 애싱방법.A semiconductor photoresist ashing method for removing a remaining photoresist of an etched process wafer in an oxygen plasma atmosphere, the method comprising the steps of: providing a dummy wafer on the edge of a stack of wafers, And replacing the dummy wafer for each number of times. 제1항에 있어서, 상기 일정 회수는 매1회인 것을 특징으로 하는 상기 반도체 포토레지스트 애싱방법.The method as claimed in claim 1, wherein the predetermined number of times is one time. 제1항에 있어서, 상기 더미 웨이퍼의 표면에 포토레지시트를 도포하여 사용하는 것을 특징으로 하는 반도체 포토레지스트 애싱방법.The semiconductor photoresist ashing method according to claim 1, wherein a photoresist sheet is applied on the surface of the dummy wafer. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960007071A 1996-03-15 1996-03-15 Semiconductor photoresist ashing method KR970067658A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960007071A KR970067658A (en) 1996-03-15 1996-03-15 Semiconductor photoresist ashing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960007071A KR970067658A (en) 1996-03-15 1996-03-15 Semiconductor photoresist ashing method

Publications (1)

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KR970067658A true KR970067658A (en) 1997-10-13

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KR1019960007071A KR970067658A (en) 1996-03-15 1996-03-15 Semiconductor photoresist ashing method

Country Status (1)

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KR (1) KR970067658A (en)

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