KR970067658A - Semiconductor photoresist ashing method - Google Patents
Semiconductor photoresist ashing method Download PDFInfo
- Publication number
- KR970067658A KR970067658A KR1019960007071A KR19960007071A KR970067658A KR 970067658 A KR970067658 A KR 970067658A KR 1019960007071 A KR1019960007071 A KR 1019960007071A KR 19960007071 A KR19960007071 A KR 19960007071A KR 970067658 A KR970067658 A KR 970067658A
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- KR
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- Prior art keywords
- wafer
- ashing
- ashing method
- dummy
- wafers
- Prior art date
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- Drying Of Semiconductors (AREA)
Abstract
반도체 웨이퍼 가공의 애싱방법 가운데 특히 더미 웨이퍼의 사용에 관한 것이다.And more particularly to the use of dummy wafers among ashing methods of semiconductor wafer processing.
본 발명의 애싱방법은 식각공정을 마친 웨이퍼의 잔여 포토레지스트를 산소 플라즈마 분위기에서 제거하는 애싱방법에 있어서, 일단의 적재된 웨이퍼들의 가장자리에 더미 웨이퍼를 설치하고 애싱공정을 마친 공정웨이퍼를 교체하는 일정 회수마다 더미 웨이퍼도 교체하는 것을 특징으로 한다.The ashing method of the present invention is an ashing method for removing residual photoresist of an etched wafer in an oxygen plasma atmosphere. The ashing method includes the steps of providing a dummy wafer on the edge of a stack of wafers, And dummy wafers are also replaced for each number of times.
본 발명에 따르면 애싱공정에서 더미 웨이퍼 사용에 의한 식각물질 누적으로 인하여 애싱공정중 웨이퍼가 과도하게 부식되어 훼손되는 현상을 방지하는 효과를 얻을 수 있다.According to the present invention, it is possible to prevent the wafer from being excessively corroded and damaged during the ashing process due to the accumulation of etching materials by using the dummy wafer in the ashing process.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제2도는 본 발명에 의한 애싱공정에서 웨이퍼 및 더미 웨이퍼(dummy wafer)가 배치된 상태를 나타내는 개략적 도면이다.FIG. 2 is a schematic view showing a state in which a wafer and a dummy wafer are arranged in the ashing process according to the present invention. FIG.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960007071A KR970067658A (en) | 1996-03-15 | 1996-03-15 | Semiconductor photoresist ashing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960007071A KR970067658A (en) | 1996-03-15 | 1996-03-15 | Semiconductor photoresist ashing method |
Publications (1)
Publication Number | Publication Date |
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KR970067658A true KR970067658A (en) | 1997-10-13 |
Family
ID=66215678
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019960007071A KR970067658A (en) | 1996-03-15 | 1996-03-15 | Semiconductor photoresist ashing method |
Country Status (1)
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KR (1) | KR970067658A (en) |
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1996
- 1996-03-15 KR KR1019960007071A patent/KR970067658A/en not_active Application Discontinuation
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