KR980005902A - Wafer cleaning method - Google Patents

Wafer cleaning method Download PDF

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Publication number
KR980005902A
KR980005902A KR1019960025395A KR19960025395A KR980005902A KR 980005902 A KR980005902 A KR 980005902A KR 1019960025395 A KR1019960025395 A KR 1019960025395A KR 19960025395 A KR19960025395 A KR 19960025395A KR 980005902 A KR980005902 A KR 980005902A
Authority
KR
South Korea
Prior art keywords
wafer
cleaning method
solution
wafer cleaning
ozone
Prior art date
Application number
KR1019960025395A
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Korean (ko)
Inventor
김경일
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019960025395A priority Critical patent/KR980005902A/en
Publication of KR980005902A publication Critical patent/KR980005902A/en

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Abstract

본 발명은 반도체 제조중 웨이퍼 표면세정방법에 있어서, 오존과 순수(D.I)가 혼합된 용액에서 웨이퍼상의 유기물을 제거하는 것을 특징으로 하는 효과적인 웨이퍼 세정방법에 관한 것으로 종래의 세정용액으로 독성있는 산성용액을 사용하지 않아 웨이퍼 표면의 손상이 전혀 없으며 상기 용액의 폐액처분에서 자연보호의 효과가 있고, 세정공정의 비용을 절감할 수가 있다.The present invention relates to an effective wafer cleaning method for removing organic matters on a wafer in a solution in which ozone and pure water (DI) are mixed, in a wafer surface cleaning method during semiconductor manufacturing. The present invention relates to an effective wafer cleaning method, There is no damage to the surface of the wafer at all, and there is an effect of protecting the solution from waste solution disposal of the solution, and the cost of the cleaning process can be reduced.

Description

웨이퍼 세정방법Wafer cleaning method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제1도는 본 발명의 일실시예에 따른 웨이퍼를 세정하기 위한 장치의 개략적인 구성도이다.FIG. 1 is a schematic block diagram of an apparatus for cleaning a wafer according to an embodiment of the present invention.

Claims (2)

반도체 제조 공정중 웨이퍼 유기물 제거를 위한 세정방법에 있어서, 오존과 순수(D.I)가 혼합된 용액에서 웨이퍼상의 유기물을 제거하는 것을 특징으로 하는 웨이퍼 세정방법.A cleaning method for wafer organic matter removal during a semiconductor manufacturing process, the organic matter on the wafer being removed in a solution in which ozone and pure water (DI) are mixed. 제 1 항에 있어서, 상기 오존과 순수가 혼합된 용액의 농도는 2 - 4 ppm인 것을 특징으로 하는 웨이퍼 세정방법.The method of claim 1, wherein the concentration of the solution in which the ozone and pure water is mixed is 2 to 4 ppm. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960025395A 1996-06-28 1996-06-28 Wafer cleaning method KR980005902A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960025395A KR980005902A (en) 1996-06-28 1996-06-28 Wafer cleaning method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960025395A KR980005902A (en) 1996-06-28 1996-06-28 Wafer cleaning method

Publications (1)

Publication Number Publication Date
KR980005902A true KR980005902A (en) 1998-03-30

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960025395A KR980005902A (en) 1996-06-28 1996-06-28 Wafer cleaning method

Country Status (1)

Country Link
KR (1) KR980005902A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100483037B1 (en) * 1997-12-27 2005-07-29 주식회사 하이닉스반도체 Semiconductor Wafer Cleaning Method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100483037B1 (en) * 1997-12-27 2005-07-29 주식회사 하이닉스반도체 Semiconductor Wafer Cleaning Method

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