KR970063474A

KR970063474A - Method for forming polysilicon conductive film of semiconductor device

Info

Publication number: KR970063474A
Application number: KR1019960005365A
Authority: KR
Inventors: 백정권
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1996-02-29
Filing date: 1996-02-29
Publication date: 1997-09-12

Abstract

본 발명은 기판 상에 폴리실리콘막을 형성하는 단계; 상기 폴리실리콘막내에 실리콘 원자보다 원자 반경이 작고, 활성화 에너지가 낮은 불순물을 도핑하는 단계를 포함하여 이루어지는 반도체 소자의 폴리실리콘 전도막 형성 방법에 관한 것으로, 약 600℃ 내지 650℃의 비교적 낮은 공정 온도로 도핑이 이루어져, 고온 진행시 성장되는 자연 산화막을 제거하는 별도의 공정을 필요로 하지 않고, 원자 반경이 작고 활성에너지가 낮은 1가 또는 2가의 불순물을 도핑시킴으로써, 폴리실리콘막의 구성요소인 실리콘과 실리콘과의 결정 결합을 파괴하지 않고 불순물을 도핑시킬 수 있는 효과가 있다.The present invention provides a method of manufacturing a semiconductor device, comprising: forming a polysilicon film on a substrate; And a step of doping an impurity having a smaller atomic radius and a lower activation energy in the polysilicon film than a silicon atom. The present invention relates to a method of forming a polysilicon conductive film in a semiconductor device having a relatively low process temperature of about 600 캜 to 650 캜 Doping is carried out by doping a monovalent or divalent impurity having a small atomic radius and a low activation energy without requiring a separate step of removing a native oxide film to be grown at a high temperature, There is an effect that the impurity can be doped without destroying crystal bonds with silicon.

Description

Method for forming polysilicon conductive film of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제3도는 본 발명의 일실시예에 따른 폴리실리콘 전도막의 결정 결합 단면도.FIG. 3 is a crystal-bonded cross-sectional view of a polysilicon conductive film according to an embodiment of the present invention. FIG.

Claims

A method of manufacturing a semiconductor device, comprising: forming a polysilicon film on a substrate; And doping impurities having a smaller atomic radius and lower activation energy in the polysilicon cone film than the silicon atoms.

The method of claim 1, further comprising: Wherein the impurity doping is performed by diffusion in a process tube maintaining a relatively low process temperature of about 600 < 0 > C to 650 < 0 > C.

3. The method of claim 2, Wherein the impurity is a monovalent or divalent atom on the periodic table.

The method of claim 1, further comprising: Wherein the impurity is monovalent lithium (Li).

※ Note: It is disclosed by the contents of the first application.