KR970063257A - Voltage generator for stable bit line precharge - Google Patents

Voltage generator for stable bit line precharge Download PDF

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Publication number
KR970063257A
KR970063257A KR1019960004480A KR19960004480A KR970063257A KR 970063257 A KR970063257 A KR 970063257A KR 1019960004480 A KR1019960004480 A KR 1019960004480A KR 19960004480 A KR19960004480 A KR 19960004480A KR 970063257 A KR970063257 A KR 970063257A
Authority
KR
South Korea
Prior art keywords
power supply
external power
voltage
supply voltage
bit line
Prior art date
Application number
KR1019960004480A
Other languages
Korean (ko)
Inventor
김명재
용명식
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019960004480A priority Critical patent/KR970063257A/en
Publication of KR970063257A publication Critical patent/KR970063257A/en

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  • Static Random-Access Memory (AREA)
  • Dram (AREA)

Abstract

본 발명은 비트라인을 외부 공급 전원으로 프리차지(Precharge)시키는 메모리 장치에 관한 것으로, 특히, 외부 공급 전원의 변동 사항에 대하여 프리차지 전압의 변동을 최소화하여 안정된 코어 동작을 할 수 있는 안정된 비트라인 프리차지용 전압 발생기에 관한 것이다.The present invention relates to a memory device for precharging a bit line to an external power supply. More particularly, the present invention relates to a memory device capable of minimizing variations in precharge voltage with respect to variations in an external power supply, To a precharge voltage generator.

본 발명은 외부 전원 전압이 소정 레벨로 되는 것을 검출하는 외부 전원 전압 검출 수단; 사익 외부 전원 전압 검출 수단에 응답하여 상기 외부 전원 전압이 소정 레벨 이하인 경우에는 비트라인 프리차지 전압을 외부 전원 전압 레벨로 구동하는 제1구동 수단; 상기 외부 전원 전압검출 수단에 응답하여 상기 외부 전원 전압이 소정 레벨 이상인 경우에는 상기 비트라인 프리차지 전압을 외부 전원 전압 레벨보다 특정전압 레벨만큼 낮은 전압 레벨로 구동하는 제2구동 수단을 구비하는 것을 특징으로 한다.The present invention is characterized by comprising: external power supply voltage detection means for detecting that an external power supply voltage reaches a predetermined level; First driving means for driving the bit line pre-charge voltage to an external power supply voltage level in response to the external power supply voltage detection means and the external power supply voltage is less than a predetermined level; And a second driving means for driving the bit line pre-charge voltage to a voltage level lower than the external power supply voltage by a specific voltage level when the external power supply voltage is higher than a predetermined level in response to the external power supply voltage detecting means .

따라서 본 발명은 외부 공급 전원의 변동 사항에 대하여 비트라인의 프리차지 전압 변동을 최소화하여 안정된 코어 동작을 할 수 있는 효과가 있다.Therefore, the present invention has an effect of minimizing variations in precharge voltage of a bit line with respect to variations of an external power supply, thereby achieving a stable core operation.

Description

안정된 비트라인 프리차지용 전압 발생기Voltage generator for stable bit line precharge

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제1도는 본 발명에 따른 안정된 비트라인 프리차지용 전압 발생기의 회로도.FIG. 1 is a circuit diagram of a stable bit line precharge voltage generator according to the present invention; FIG.

Claims (1)

외부 전원 전압이 소정 레벨로 되는 것을 검출하는 외부 전원 전압 검출 수단; 상기 외부 전원 전압 검출 수단에 응답하여 상기 외부 전원 전압이 소정 레벨 이하인 경우에는 비트라인 프리차지 전압을 외부 전원 전압 레벨로 구동하는 제1구동 수단; 상기 외부 전원 전압 검출 수단에 응답하여 상기 외부 전원 전압이 소정 레벨 이상인 경우에는 상기 비트라인 프리차지 전압을 외부 전원 전압 레벨보다 특정 전압 레벨만큼 낮은 전압 레벨로 구동하는 제2구동 수단을 구비한 것을 특징으로 하는 비트라인 프리차지용 전압 발생기.External power supply voltage detection means for detecting that the external power supply voltage reaches a predetermined level; First driving means for driving the bit line pre-charge voltage to an external power supply voltage level in response to the external power supply voltage detection means when the external power supply voltage is less than a predetermined level; And a second driving means for driving the bit line pre-charge voltage to a voltage level lower than the external power supply voltage by a specific voltage level when the external supply voltage is higher than a predetermined level in response to the external supply voltage detecting means Voltage precharge voltage generator. ※ 참고사항 : 최초출원 내용에의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960004480A 1996-02-24 1996-02-24 Voltage generator for stable bit line precharge KR970063257A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960004480A KR970063257A (en) 1996-02-24 1996-02-24 Voltage generator for stable bit line precharge

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960004480A KR970063257A (en) 1996-02-24 1996-02-24 Voltage generator for stable bit line precharge

Publications (1)

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KR970063257A true KR970063257A (en) 1997-09-12

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KR1019960004480A KR970063257A (en) 1996-02-24 1996-02-24 Voltage generator for stable bit line precharge

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100479822B1 (en) * 2002-07-11 2005-03-30 주식회사 하이닉스반도체 Internal voltage stabilizing circuit
KR100695285B1 (en) * 2005-10-06 2007-03-16 주식회사 하이닉스반도체 Bit-line Equalizing Signal Driving Circuit and Driving Method Thereof
KR100706826B1 (en) * 2005-09-08 2007-04-12 주식회사 하이닉스반도체 Device for generating bitline precharge voltage
KR100816159B1 (en) * 2006-09-29 2008-03-21 주식회사 하이닉스반도체 Regulator for non volatile memory device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100479822B1 (en) * 2002-07-11 2005-03-30 주식회사 하이닉스반도체 Internal voltage stabilizing circuit
KR100706826B1 (en) * 2005-09-08 2007-04-12 주식회사 하이닉스반도체 Device for generating bitline precharge voltage
US7447089B2 (en) 2005-09-08 2008-11-04 Hynix Semiconductor Inc. Bitline precharge voltage generator
KR100695285B1 (en) * 2005-10-06 2007-03-16 주식회사 하이닉스반도체 Bit-line Equalizing Signal Driving Circuit and Driving Method Thereof
KR100816159B1 (en) * 2006-09-29 2008-03-21 주식회사 하이닉스반도체 Regulator for non volatile memory device

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