KR970053808A - Power supply voltage detector - Google Patents
Power supply voltage detector Download PDFInfo
- Publication number
- KR970053808A KR970053808A KR1019950048008A KR19950048008A KR970053808A KR 970053808 A KR970053808 A KR 970053808A KR 1019950048008 A KR1019950048008 A KR 1019950048008A KR 19950048008 A KR19950048008 A KR 19950048008A KR 970053808 A KR970053808 A KR 970053808A
- Authority
- KR
- South Korea
- Prior art keywords
- power supply
- supply voltage
- voltage
- control signals
- voltage level
- Prior art date
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
- G01R19/16566—Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measurement Of Current Or Voltage (AREA)
Abstract
본 발명은 전원전압검출장치에 관한 것으로서, 특히 반도체 제조공정시에 발생하는 문턱전압(Threshold Voltage)의 변화에 관계없이 안정적이고 일정한 전원전압을 검출하기에 적당하도록 한 전원전압검출장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power supply voltage detection device, and more particularly, to a power supply voltage detection device suitable for detecting a stable and constant power supply voltage regardless of a change in a threshold voltage generated during a semiconductor manufacturing process.
상기와 같은 목적을 달성하기 위한 본 발명에 따른 전원전압검출장치는 전원전압과 Vss사이에 연이어 직렬로 연결된 복수개의 트랜지스터와, 상기 복수개의 트랜지스터간의 출력단들과 리셋트신호를 비교하여 복수개의 제어신호를 출력하는 전압비교기와, 상기 전압비교기의 제어신호들을 저장하여 유지시키는 복수개의 래치와, 상기 래치의 복수개 제어신호에 따라 스위칭 동작하는 복수개의 트랜스미션게이트와, 상기 복수개의 트랜스미션 게이트 일측에 각각 일정갯수씩 연결되어 각각 다른 문턱전압이 설정된 다이오드용 트랜지스터와, 상기 복수개의 트랜스미션 게이트에 상기 전원전압을 인가하는 공급트랜지스터와, 상기 공급트랜지스터의 출력전압레벨을 검출, 반전하는 전압레벨검출용 인버터와, 상기 전압레벨검출용 인버터에 포함된 잡음성분을 제거하는 커패시터와, 상기 커패시터에서 잡음이 제거된 상기 전압레벨을 증폭 및 반전시키는 증폭용 인버터로 이루어짐을 특징으로 한다.The power supply voltage detection device according to the present invention for achieving the above object is a plurality of control signals by comparing a plurality of transistors connected in series between the power supply voltage and Vss, the output terminal and the reset signal between the plurality of transistors A voltage comparator for outputting a voltage, a plurality of latches for storing and maintaining control signals of the voltage comparator, a plurality of transmission gates for switching according to the plurality of control signals of the latches, and a predetermined number of sides of the plurality of transmission gates, respectively. A diode transistor connected to each other and having different threshold voltages, a supply transistor for applying the power supply voltage to the plurality of transmission gates, a voltage level detection inverter for detecting and inverting an output voltage level of the supply transistor, Job included in inverter for voltage level detection And the capacitor, and a voltage level of the noise is removed from the capacitor to eliminate the component characterized by made of an inverter amplifier for amplifying and inverting.
따라서, 본 발명의 전원전압검출장치는 반도체 제조공정상에서 결정된 문턱전압의 변화를 감지하여 원하는 일정 레벨의 전원전압값이 검출됨으로써 시스템 클럭 발진 안정시간중에, 문턱전압의 변화에 따른 출력전원전압을 보상하고 안정적인 전원전압레벨을 검출하는 효과가 있다.Accordingly, the power supply voltage detection device of the present invention detects a change in the threshold voltage determined in the semiconductor manufacturing process and detects a desired power supply voltage value, thereby compensating the output power supply voltage according to the change of the threshold voltage during the system clock oscillation settling time. It is effective to detect a stable power supply voltage level.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도는 본 발명에 따른 전원전압검출장치를 나타낸 회로도.2 is a circuit diagram showing a power supply voltage detection device according to the present invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950048008A KR0161857B1 (en) | 1995-12-08 | 1995-12-08 | Detection device for power supply voltage |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950048008A KR0161857B1 (en) | 1995-12-08 | 1995-12-08 | Detection device for power supply voltage |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970053808A true KR970053808A (en) | 1997-07-31 |
KR0161857B1 KR0161857B1 (en) | 1998-12-01 |
Family
ID=19438772
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950048008A KR0161857B1 (en) | 1995-12-08 | 1995-12-08 | Detection device for power supply voltage |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR0161857B1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101018691B1 (en) * | 2008-12-30 | 2011-03-04 | 주식회사 하이닉스반도체 | Vdd detector in semiconductor memory device |
-
1995
- 1995-12-08 KR KR1019950048008A patent/KR0161857B1/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101018691B1 (en) * | 2008-12-30 | 2011-03-04 | 주식회사 하이닉스반도체 | Vdd detector in semiconductor memory device |
Also Published As
Publication number | Publication date |
---|---|
KR0161857B1 (en) | 1998-12-01 |
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