SU1636857A1 - Microcircuit substrate voltage former - Google Patents

Abstract

The invention relates to electronic engineering and can be used in integrated circuits on MIS transistors. The purpose of the invention is to improve the accuracy of stabilization of the voltage being formed on the chip substrate by reducing the dependence of this voltage on the supply voltage, the frequency of the master oscillator, and the manufacturing technology of the main transistors. The goal is achieved by introducing the first inverter 6 on MIS transistors 7 and 8, the second inverter 9 (MOS transistors 10 and 11), the third inverter 12 (MOS transistors 13 and 14) and the switch 15, which ensures that the voltage on the chip substrate is kept at a certain level determined by the state of the transistor 8. 1 or

Description

The invention relates to electronic equipment and can be used in integrated circuits on MOS transistors.

The purpose of the invention is to increase the accuracy of stabilization of the generated voltage on the chip substrate by reducing the dependence of this voltage on the supply voltage, the frequency of the master oscillator, the manufacturing technology of the main transistors.

The drawing shows a functional diagram of the device.

The device comprises a master oscillator 1, an amplifier 2, a capacitor 3, a first 4 and a second 5 MOS transistors, a first inverter 6 made on MOS transistors 7 and 8 (the transistor 8 has a higher coefficient of influence of the substrate voltage compared to the output transistor devices), a second inverter 9 (MOS transistors 10 and 11), a third inverter 12 (MOS transistors 13 and 14), a switch 15, a common bus 16, an output bus 17 and a power bus 18.

The device operates as follows.

From the output of the generator 1, periodic signals are fed to the input of the amplifier 2, amplified, and fed to the plates of the capacitor 3. Suppose that in the initial state 30 the substrate voltage is zero, and the geometric dimensions and threshold voltages of the MOS transistors of the inverters provide the formation of a high level voltage at the gate of the transistor 13 35 and low gate transistor

15. This provides, when a high level voltage appears at the output of the amplifier 2, the capacitor 3 charges, and at a low level, a capacitor discharge and an increase in substrate voltage 40.

As the substrate voltage increases, the voltage at the output of the first inverter 6 increases (due to the increased coefficient of influence of the substrate of transistor 8), without affecting the remaining elements of the device. This increase occurs until the voltage at the output of the first inverter 6 reaches a level sufficient to unlock the transistor 11, which leads to the locking of the transistor 13, the cessation of charging 5 of the capacitor 3, and consequently, the subsequent increase in the voltage of the substrate (bus 17). In addition, the locking of the transistor 13 leads to an increase in the voltage at the gate of the transistor 15 and the possibility of some decrease in the voltage on the substrate due to the flow of current through the transistor 15. When the voltage of the substrate decreases, the voltage at the output of the first 6 and third 12 inverters 15 decreases, and at the output the second inverter 9 is increased, which ensures the flow of the charging current of the capacitor 3 and the locking of the transistor 15.

Thus, the voltage on the substrate of the microcircuit is kept at a certain level determined by the state of the transistor 8 (within the limits of the voltage on the bus 18, reduced by the threshold voltage of the transistor 4).

Claims (1)

Claim A device for generating voltage on the substrate of the microcircuit, comprising a master oscillator, an amplifier, a capacitor and two transistors, the output of the master oscillator being connected through a series-connected amplifier and capacitor to the drain and gate of the first transistor and the source of the second transistor, the drain and gate of which are connected to the output terminal, characterized in that. in order to improve the accuracy of stabilization of the generated voltage on the chip substrate by reducing the dependence on stabilizing factors, three inverters and a switch are introduced into it, the output of the first inverter through the second inverter is connected to the input of the third inverter, the output of which is connected to the source of the first transistor and the control input of the switch, the output terminal through the switch is connected to a common bus.