KR970053515A - Semiconductor device manufacturing method - Google Patents

Abstract

The present invention relates to a method for fabricating a semiconductor device, comprising: forming a device isolation insulating film on a semiconductor substrate and forming an impurity region in the semiconductor substrate cell portion or a peripheral circuit portion, respectively, as a mask, and then lower insulating to planarize the entire upper surface thereof. After forming a layer and forming a predetermined thickness of the storage electrode polysilicon film connected to the impurity region of the cell portion, a polysilicon film pattern for the storage electrode is formed by an etching process using the storage electrode mask, and the dielectric film and the flake electrode are sequentially formed. After the formation, the plate electrode is etched so that the cell portion and the peripheral circuit portion are electrically isolated, and an electrically shorted capacitor is formed in each of the cell portion and the peripheral circuit portion such as to form an upper insulating layer, thereby eliminating the step to facilitate the subsequent process. Improves the characteristics and reliability of semiconductor devices A technique that can kill.

Description

Semiconductor device manufacturing method

Since this is an open matter, no full text was included.

2A through 2D are cross-sectional views illustrating a method of manufacturing a semiconductor device in accordance with an embodiment of the present invention.

Claims (3)

Forming a device isolation insulating film on the semiconductor substrate; forming an impurity region in each of the cell portion and the peripheral circuit portion of the semiconductor substrate by implanting impurities into the semiconductor substrate using the device isolation insulating film as a mask; Forming a lower insulating layer on the upper surface, forming a conductor connected to the impurity region of the cell portion over the entire surface, forming a storage electrode in an etching process using a storage electrode mask, Forming a dielectric film and a plate electrode, wherein the plate electrode is formed by separating cell portions and peripheral circuits separately; forming an upper insulating layer over the entire surface; and contact holes exposing impurity regions from the peripheral circuit. Forming an insulating film spacer; forming an insulating film spacer on the sidewalls of the contact hole; Method of manufacturing a semiconductor device including a step of forming a wiring. The method of claim 1, wherein the insulating film spacer is formed of an oxide film or a nitride film. The method of claim 1, wherein the insulating layer spacer is formed by LPCVD or PECVD. ※ Note: The disclosure is based on the initial application.