KR970053440A - Device isolation method of semiconductor - Google Patents
Device isolation method of semiconductor Download PDFInfo
- Publication number
- KR970053440A KR970053440A KR1019950059256A KR19950059256A KR970053440A KR 970053440 A KR970053440 A KR 970053440A KR 1019950059256 A KR1019950059256 A KR 1019950059256A KR 19950059256 A KR19950059256 A KR 19950059256A KR 970053440 A KR970053440 A KR 970053440A
- Authority
- KR
- South Korea
- Prior art keywords
- device isolation
- semiconductor
- isolation region
- isolation method
- impurity ions
- Prior art date
Links
Landscapes
- Element Separation (AREA)
Abstract
반도체의 소자격리영역을 형성함에 있어서, 소자격리영역을 형성하기 위한 불순물 이온을 주입한 후, 추가로 상기 불순물 이온을 주입함으로써, 소자격리영역의 저항을 줄이고, 소자격리영역을 접지로 사용할 경우에는 접지의 전기적 특성을 향상시키고, 반도체의 안정화와 성능의 향상을 기할 수 있게 된다.In forming the device isolation region of the semiconductor, after implanting the impurity ions for forming the device isolation region, and then implanting the impurity ions to reduce the resistance of the device isolation region, when using the device isolation region as the ground The electrical characteristics of the ground can be improved, and the semiconductor can be stabilized and the performance can be improved.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제2A도 내지 제2C도는 본 발명에 의하여 반도체상의 소자격리영역을 형성하는 공정도.2A to 2C are process drawings for forming a device isolation region on a semiconductor according to the present invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950059256A KR970053440A (en) | 1995-12-27 | 1995-12-27 | Device isolation method of semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950059256A KR970053440A (en) | 1995-12-27 | 1995-12-27 | Device isolation method of semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970053440A true KR970053440A (en) | 1997-07-31 |
Family
ID=66619902
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950059256A KR970053440A (en) | 1995-12-27 | 1995-12-27 | Device isolation method of semiconductor |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970053440A (en) |
-
1995
- 1995-12-27 KR KR1019950059256A patent/KR970053440A/en not_active Application Discontinuation
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW374226B (en) | Graded-channel semiconductor device and method of manufacturing the same | |
KR970053440A (en) | Device isolation method of semiconductor | |
KR960026459A (en) | Transistor Manufacturing Method | |
KR890005885A (en) | Manufacturing method of bipolar transistor | |
KR960035918A (en) | Shallow Junction Formation Method of Semiconductor Devices | |
KR960019576A (en) | Method of forming gate insulating film of ROM | |
KR970030317A (en) | Semiconductor device manufacturing method | |
KR960036044A (en) | Self-Aligning Twinwell Formation Method | |
KR920013762A (en) | Parasitic capacitance reducing vertical MOSFET manufacturing method and structure | |
KR920015615A (en) | Manufacturing method of bipolar transistor | |
KR920001727A (en) | How to increase capacitance of semiconductor device | |
KR910005483A (en) | Capacitor Manufacturing Method | |
KR910005455A (en) | Capacitor electrode formation method | |
KR950021111A (en) | Source contact formation method of semiconductor device | |
KR970053433A (en) | Device Separation Method of Semiconductor Device | |
KR910005457A (en) | Trench wall doping method using SOG | |
KR950015569A (en) | Manufacturing Method of Semiconductor Device | |
KR940018998A (en) | Bi CMOS Memory Cell Manufacturing Method | |
KR910013582A (en) | MOS device manufacturing method using well buffer material | |
KR920007234A (en) | Enmoose BLDD manufacturing method | |
KR970008337A (en) | Well Forming Method of Semiconductor Device | |
KR930014948A (en) | Isolation Method of Transistor | |
KR920003470A (en) | Field isolation method | |
KR960017940A (en) | Polysilicon conductive film formation method | |
KR910013445A (en) | Semiconductor device and manufacturing method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
N231 | Notification of change of applicant | ||
WITN | Withdrawal due to no request for examination |