KR970053440A - Device isolation method of semiconductor - Google Patents

Device isolation method of semiconductor Download PDF

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Publication number
KR970053440A
KR970053440A KR1019950059256A KR19950059256A KR970053440A KR 970053440 A KR970053440 A KR 970053440A KR 1019950059256 A KR1019950059256 A KR 1019950059256A KR 19950059256 A KR19950059256 A KR 19950059256A KR 970053440 A KR970053440 A KR 970053440A
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KR
South Korea
Prior art keywords
device isolation
semiconductor
isolation region
isolation method
impurity ions
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KR1019950059256A
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Korean (ko)
Inventor
전인오
Original Assignee
김광호
삼성전자 주식회사
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950059256A priority Critical patent/KR970053440A/en
Publication of KR970053440A publication Critical patent/KR970053440A/en

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Abstract

반도체의 소자격리영역을 형성함에 있어서, 소자격리영역을 형성하기 위한 불순물 이온을 주입한 후, 추가로 상기 불순물 이온을 주입함으로써, 소자격리영역의 저항을 줄이고, 소자격리영역을 접지로 사용할 경우에는 접지의 전기적 특성을 향상시키고, 반도체의 안정화와 성능의 향상을 기할 수 있게 된다.In forming the device isolation region of the semiconductor, after implanting the impurity ions for forming the device isolation region, and then implanting the impurity ions to reduce the resistance of the device isolation region, when using the device isolation region as the ground The electrical characteristics of the ground can be improved, and the semiconductor can be stabilized and the performance can be improved.

Description

반도체의 소자격리방법Device isolation method of semiconductor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2A도 내지 제2C도는 본 발명에 의하여 반도체상의 소자격리영역을 형성하는 공정도.2A to 2C are process drawings for forming a device isolation region on a semiconductor according to the present invention.

Claims (2)

소자격리영역의 전기적 특성을 향상시키기 위하여, 형성된 소자격리 영역내에 추가적인 불순물 이온을 주입하는 것을 특징으로 하는 반도체의 소자격리방법.In order to improve the electrical characteristics of the device isolation region, a device isolation method for a semiconductor, characterized in that the implantation of additional impurity ions into the formed device isolation region. 제1항에 있어서, 추가적인 불순물 이온으로서 BBr3를 사용하는 것을 특징으로 하는 반도체의 소자격리방법.The method of claim 1, wherein BBr3 is used as additional impurity ions. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950059256A 1995-12-27 1995-12-27 Device isolation method of semiconductor KR970053440A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950059256A KR970053440A (en) 1995-12-27 1995-12-27 Device isolation method of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950059256A KR970053440A (en) 1995-12-27 1995-12-27 Device isolation method of semiconductor

Publications (1)

Publication Number Publication Date
KR970053440A true KR970053440A (en) 1997-07-31

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KR1019950059256A KR970053440A (en) 1995-12-27 1995-12-27 Device isolation method of semiconductor

Country Status (1)

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KR (1) KR970053440A (en)

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