KR970052985A - Method for manufacturing the bipolar transistor - Google Patents

Method for manufacturing the bipolar transistor Download PDF

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Publication number
KR970052985A
KR970052985A KR1019950054398A KR19950054398A KR970052985A KR 970052985 A KR970052985 A KR 970052985A KR 1019950054398 A KR1019950054398 A KR 1019950054398A KR 19950054398 A KR19950054398 A KR 19950054398A KR 970052985 A KR970052985 A KR 970052985A
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KR
South Korea
Prior art keywords
region
emitter region
bipolar transistor
emitter
manufacturing
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Application number
KR1019950054398A
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Korean (ko)
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KR0182251B1 (en
Inventor
현동호
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김광호
삼성전자 주식회사
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Priority to KR1019950054398A priority Critical patent/KR0182251B1/en
Publication of KR970052985A publication Critical patent/KR970052985A/en
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Publication of KR0182251B1 publication Critical patent/KR0182251B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors

Abstract

바이폴라 트랜지스터 및 그 제조방법에 관하여 기재하고 있다. 이는, 제1도전형의 에미터영역, 상기 에미터 영역 아래에 형성되고, 상기 에미터영역을 감싸도록 형성된 제2도전형의 베이스영역, 및 상기 베이스영역 아래에 형성된 제1도전형의 콜렉터영역을 구비하는 바이폴라 트랜지스터에 있어서, 상기 에미터영역과 베이스영역의 접합부위가 완만하게 형성되어 상기 에미터영역의 접합깊이가 그 중앙부위에 외곽방향으로 갈수록 작아지는 것을 특징으로 한다. 따라서, 에미터 에지영역에서의 전계 밀집효과를 개선하여 전류능력을 증가시킴과 동시에 스위칭 스피드를 개선할 수 있다.A bipolar transistor and a method of manufacturing the same are described. This includes an emitter region of a first conductive type, a base region of a second conductive type formed under the emitter region and surrounding the emitter region, and a collector region of a first conductive type formed under the base region. In the bipolar transistor having a, the junction portion of the emitter region and the base region is formed gently so that the junction depth of the emitter region is smaller toward the center portion in the outward direction. Therefore, the field density in the emitter edge region can be improved to increase the current capability and the switching speed.

Description

바이폴라 트랜지스터 및 그 제조방법Bipolar Transistors and Manufacturing Method Thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명의 일 실시예에 따라 제조된 바이폴라 트랜지스터를 도시한 단면도이다.2 is a cross-sectional view illustrating a bipolar transistor manufactured according to an embodiment of the present invention.

Claims (3)

제1도전형의 에미터영역; 상기 에미터영역 아래에 형성되고, 상기 에미터영역 감싸도록 형성된 제2도전형의 베이스영역; 및 상기 베이스영역 아래에 형성된 제1도전형의 콜렉터영역을 구비하는 바이폴라 트랜지스터에 있어서, 상기 에미터영역과 베이스영역의 접합부위가 완만하게 형성되어 상기 에미터영역의 접합깊이가 그 중앙부위에서 외곽방향으로 갈수록 작아지는 것을 특징으로 하는 바이폴라 트랜지스터.An emitter region of a first conductivity type; A base region of a second conductivity type formed under the emitter region and surrounding the emitter region; And a collector region of a first conductivity type formed under the base region, wherein a junction portion of the emitter region and the base region is formed smoothly so that the junction depth of the emitter region is in the outer direction from the center portion thereof. Bipolar transistor characterized in that it becomes smaller toward. 바이폴라 트랜지스터의 제조방법에 있어서, 에미터영역 형성을 위한 불순물 주입시, 에미터영역의 중심으로부터 외곽방향으로 갈수록 그 간격이 좁아지는 접촉창을 갖는 마스크 패턴을 이용하는 것을 특징으로 하는 바이폴라 트랜지스터의 제조방법.A method of manufacturing a bipolar transistor, wherein a method of manufacturing a bipolar transistor uses a mask pattern having a contact window in which an interval narrows toward the outer direction from the center of the emitter region when an impurity is implanted to form an emitter region. . 제2항에 있어서, 상기 마스크 패턴은 산화물로 형성된 것을 특징으로 하는 바이폴라 트랜지스터의 제조방법.The method of claim 2, wherein the mask pattern is formed of an oxide. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950054398A 1995-12-22 1995-12-22 Method of fabricating bipolar transistor KR0182251B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950054398A KR0182251B1 (en) 1995-12-22 1995-12-22 Method of fabricating bipolar transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950054398A KR0182251B1 (en) 1995-12-22 1995-12-22 Method of fabricating bipolar transistor

Publications (2)

Publication Number Publication Date
KR970052985A true KR970052985A (en) 1997-07-29
KR0182251B1 KR0182251B1 (en) 1999-04-15

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950054398A KR0182251B1 (en) 1995-12-22 1995-12-22 Method of fabricating bipolar transistor

Country Status (1)

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KR (1) KR0182251B1 (en)

Also Published As

Publication number Publication date
KR0182251B1 (en) 1999-04-15

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