KR960019479A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
KR960019479A
KR960019479A KR1019940029164A KR19940029164A KR960019479A KR 960019479 A KR960019479 A KR 960019479A KR 1019940029164 A KR1019940029164 A KR 1019940029164A KR 19940029164 A KR19940029164 A KR 19940029164A KR 960019479 A KR960019479 A KR 960019479A
Authority
KR
South Korea
Prior art keywords
impurity diffusion
diffusion region
impurity
diffusing
semiconductor substrate
Prior art date
Application number
KR1019940029164A
Other languages
Korean (ko)
Other versions
KR0148699B1 (en
Inventor
이언상
이종홍
Original Assignee
곽정소
한국전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 곽정소, 한국전자 주식회사 filed Critical 곽정소
Priority to KR1019940029164A priority Critical patent/KR0148699B1/en
Publication of KR960019479A publication Critical patent/KR960019479A/en
Application granted granted Critical
Publication of KR0148699B1 publication Critical patent/KR0148699B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)

Abstract

본 발명은 반도체소자에 관한 것으로, 베이스 접촉부의 고농도 불순물 영역을 접합깊이까지 확산시킴으로써 베이스의 부성저항에 의한 콜렉터 에미터간 항복전압의 스위치백 현상을 완화하여 상기 콜렉터 에미터간 항복 전압을 전류이득과 무관하게 향상시킬 수 있으며, 베이스의 분포저항 및 에미터 영역에서의 측면 주입효과를 감소시켜 최대콜렉터 전류와 포화전압특성을 향상시킬 수 있고, 또한 상기 최대콜렉터 전류와 포화전압특성의 향상으로 작은 칩면적을 감소시킬 수 있는 효과가 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a semiconductor device, which reduces the switchback phenomenon of the breakdown voltage between collector emitters due to negative resistance of the base by diffusing a high concentration impurity region of the base contact portion to the junction depth so that the breakdown voltage between collector emitters is independent of current gain. The maximum collector current and saturation voltage characteristics can be improved by reducing the distribution resistance of the base and the side injection effect in the emitter region, and the small chip area can be improved by the improvement of the maximum collector current and saturation voltage characteristics. There is an effect that can reduce.

Description

반도체소자Semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명에 의한 반도체소자의 단면도.2 is a cross-sectional view of a semiconductor device according to the present invention.

Claims (1)

반도체기판의 일면에 상기 반도체기판과 동일한 제1도전형의 고농도 불순물을 확산시켜 형성된 제1불순물 확산영역과, 상기 반도체기판의 다른면에 반도체기판과 다른 제2전도형의 저농도 불순물을 확산시켜 형성된 제2불순물 확산영역과, 상기 제2불순물 확산영역에 상호 일정간격을 가지도록 제2전도형의 고농도 불순물을 상기 제2불순물 확산영역의 바닥부까지 확산시켜 형성된 다수의 제3불순물 확산영역과, 상기 제3불순물 영역 사이의 제2불순물 확산영역에 제1전도형의 고농도 불순물을 소정깊이까지 확산시켜 형성된 다수의 제4불순물 확산영역과, 상기 제3불순물 확산영역 및 제4불순물 확산영역과 접촉하며 상호절연된 다수의 금속전극을 포함하여 구성된 것을 특징으로 하는 반도체소자.A first impurity diffusion region formed by diffusing a high concentration impurity of the same first conductivity type as the semiconductor substrate on one surface of the semiconductor substrate, and a low concentration impurity of a second conductivity type different from the semiconductor substrate on the other side of the semiconductor substrate; A plurality of third impurity diffusion regions formed by diffusing high-concentration impurities of a second conductivity type to the bottom of the second impurity diffusion region so as to have a predetermined interval between the second impurity diffusion region and the second impurity diffusion region; A plurality of fourth impurity diffusion regions formed by diffusing a high concentration impurity of a first conductivity type to a predetermined depth in a second impurity diffusion region between the third impurity regions, and contacting with the third impurity diffusion region and the fourth impurity diffusion region And a plurality of mutually insulated metal electrodes. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940029164A 1994-11-08 1994-11-08 Semiconductor device KR0148699B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940029164A KR0148699B1 (en) 1994-11-08 1994-11-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940029164A KR0148699B1 (en) 1994-11-08 1994-11-08 Semiconductor device

Publications (2)

Publication Number Publication Date
KR960019479A true KR960019479A (en) 1996-06-17
KR0148699B1 KR0148699B1 (en) 1998-11-02

Family

ID=19397336

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940029164A KR0148699B1 (en) 1994-11-08 1994-11-08 Semiconductor device

Country Status (1)

Country Link
KR (1) KR0148699B1 (en)

Also Published As

Publication number Publication date
KR0148699B1 (en) 1998-11-02

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