KR970052508A - Contact hole formation method of semiconductor device - Google Patents

Contact hole formation method of semiconductor device Download PDF

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Publication number
KR970052508A
KR970052508A KR1019950069551A KR19950069551A KR970052508A KR 970052508 A KR970052508 A KR 970052508A KR 1019950069551 A KR1019950069551 A KR 1019950069551A KR 19950069551 A KR19950069551 A KR 19950069551A KR 970052508 A KR970052508 A KR 970052508A
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KR
South Korea
Prior art keywords
contact hole
forming
semiconductor device
junction region
remaining
Prior art date
Application number
KR1019950069551A
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Korean (ko)
Other versions
KR100365421B1 (en
Inventor
손기근
전상호
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950069551A priority Critical patent/KR100365421B1/en
Publication of KR970052508A publication Critical patent/KR970052508A/en
Application granted granted Critical
Publication of KR100365421B1 publication Critical patent/KR100365421B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

본 발명은 반도체 소자의 콘택홀 형성방법에 관한 것으로, 보다 구체적으로는 반도체 소자의 콘택홀 제조공정시, 콘택홀의 형성으로 인해 노출되는 접합 영역의 손상을 방지할 수 있는 반도체 소자의 콘택홀 형성방법에 관한 것으로, 본 발명은 반도체 소자의 콘택홀 형성방법에 관한 것으로, 본 발명은 반도체 소자의 콘택홀 식각시 콘택홀 부위에 절연막을 잔존시킨다음, 질소 원자를 주입하고, 그 상부에 산화막을 형성한 다음, 질소 원자가 주입된 절연막과 산화막간의 식각 선택비를 이용하여 기판의 접합 영역에 손상이 없이 콘택홀을 형성하므로써, 소자의 신뢰성을 향상할 수 있다.The present invention relates to a method of forming a contact hole in a semiconductor device, and more particularly, to a method of forming a contact hole in a semiconductor device, which can prevent damage to a junction region exposed due to the formation of a contact hole in a process of manufacturing a contact hole in a semiconductor device. The present invention relates to a method for forming a contact hole in a semiconductor device. The present invention relates to a method for forming a contact hole in a semiconductor device. Then, by using the etching selectivity between the insulating film and the oxide film injected with nitrogen atoms to form a contact hole without damage to the junction region of the substrate, it is possible to improve the reliability of the device.

Description

반도체 소자의 콘택홀 형성방법Contact hole formation method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도 (가) 내지 (라)는 본 발명에 따른 반도체 소자의 콘택홀 형성방법을 설명하기 위한 단면도.2A to 2D are cross-sectional views for explaining a method for forming a contact hole in a semiconductor device according to the present invention.

Claims (5)

반도체 소자를 구성하는 기본 전극 및 접합 영역이 구비된 반도체 기판상에 절연막을 형성하는 단계; 상기 절연막 상부에 콘택홀 형성용 마스크 패턴을 형성하는 단계; 상기 마스크 패턴에 의하여 하부의 절연막을 소정 부분 잔존하도록 식각하는 단계; 상기 결과물 상부에 질소 원자를 이온 주입하는 단계; 상기 마스크 패턴을 제거하는 단계; 상기 전체 구조물 상부에 산화막을 형성하는 단계; 상기 절연막 및 접합 영역 상부에 존재하는 산화막과 잔존하는 절연막을 식각하여 콘택홀을 형성하는 단계를 포함하는 것을 특징으로 하는 반도체 소자의 콘택홀 형성방법.Forming an insulating film on a semiconductor substrate provided with a base electrode and a junction region constituting a semiconductor element; Forming a contact hole forming mask pattern on the insulating layer; Etching a portion of the lower insulating layer remaining by the mask pattern; Ion implanting a nitrogen atom over the resultant; Removing the mask pattern; Forming an oxide film on the entire structure; And forming a contact hole by etching the oxide film and the remaining insulating film over the insulating film and the junction region. 제1항에 있어서, 상기 접합 영역 상단에 잔존하는 절연막의 두께는 300 내지 600Å인 것을 특징으로 하는 반도체 소자의 콘택홀 형성방법.The method of claim 1, wherein the thickness of the insulating film remaining on the upper portion of the junction region is 300 to 600 kPa. 제1항에 있어서, 상기 질소 원자는 1×1011ion/㎠ 내지 1×1016ion/㎠의 농도와 10 내지 20keV의 에너지로 이온 주입하는 것을 특징으로 하는 반도체 소자의 콘택홀 형성방법.The method of claim 1, wherein the nitrogen atom is ion implanted at a concentration of 1 × 10 11 ions / cm 2 to 1 × 10 16 ions / cm 2 and an energy of 10 to 20 keV. 제1항에 있어서, 상기 스페이서용 산화막은 600 내지 800℃의 온도에서 고르게 증착하는 것을 특징으로 하는 반도체 소자의 콘택홀 형성방법.The method of claim 1, wherein the spacer oxide film is deposited evenly at a temperature of 600 to 800 ℃. 제1항에 있어서, 상기 잔존하는 절연막과 스페이서용 산화막의 식각 선택비는 1:3 내지 5인 것을 특징으로 하는 반도체 소자의 콘택홀 형성방법.The method of claim 1, wherein an etching selectivity of the remaining insulating layer and the oxide layer for spacers is in a range of 1: 3 to 5. 5. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950069551A 1995-12-30 1995-12-30 Method for forming contact hole of semiconductor device KR100365421B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950069551A KR100365421B1 (en) 1995-12-30 1995-12-30 Method for forming contact hole of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950069551A KR100365421B1 (en) 1995-12-30 1995-12-30 Method for forming contact hole of semiconductor device

Publications (2)

Publication Number Publication Date
KR970052508A true KR970052508A (en) 1997-07-29
KR100365421B1 KR100365421B1 (en) 2003-03-06

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Application Number Title Priority Date Filing Date
KR1019950069551A KR100365421B1 (en) 1995-12-30 1995-12-30 Method for forming contact hole of semiconductor device

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KR100365421B1 (en) 2003-03-06

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