KR970052486A - Method of forming contact window having sidewall oxide film - Google Patents
Method of forming contact window having sidewall oxide film Download PDFInfo
- Publication number
- KR970052486A KR970052486A KR1019950066991A KR19950066991A KR970052486A KR 970052486 A KR970052486 A KR 970052486A KR 1019950066991 A KR1019950066991 A KR 1019950066991A KR 19950066991 A KR19950066991 A KR 19950066991A KR 970052486 A KR970052486 A KR 970052486A
- Authority
- KR
- South Korea
- Prior art keywords
- contact window
- oxide film
- sidewall
- polycrystalline silicon
- sidewall oxide
- Prior art date
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
절연성이 우수하고 세정 공정에 의하여 제거되지 않는 측벽 산화막을 가지는 접촉창의 형성 방법을 제공한다. 본 발명은 층간 절연층을 사진 식각하여 접촉창을 형성하고, 상기 접촉창 내부를 포함하여 상기 층간 절연층의 표면에 다결정 실리콘막을 증착하여 상기 다결정 실리콘막을 열산화시켜서 실리콘 산화막을 형성하고, 상기 실리콘 산화막을 이방성 식각하는 것을 특징으로 하는 접촉창 형성 방법이다. 본 발명에 의해선 형성된 미세 접촉창은 그 내부의 측벽에 상기 다결정 실리콘막을 열산화시켜서 형성된 측벽 산화막을 가지기 때문에, 후속 공정에서 세정 공정에 의하여 상기 측벽 산화막이 과도하게 식가되는 것을 방지한다. 따라서, 인접한 배선 라인과 상기 접촉량을 메우는 도전층 사이에서 절연성이 나빠지는 문제를 방지할 수 있는 효과를 가진다.Provided is a method of forming a contact window having excellent sidewall insulation and having sidewall oxide films that are not removed by a cleaning process. The present invention provides a contact window by photolithography an interlayer insulating layer, and depositing a polycrystalline silicon film on the surface of the interlayer insulating layer including the inside of the contact window to thermally oxidize the polycrystalline silicon film to form a silicon oxide film. A contact window forming method characterized by anisotropically etching an oxide film. Since the fine contact window formed by the present invention has a sidewall oxide film formed by thermally oxidizing the polycrystalline silicon film on the inner sidewall thereof, the sidewall oxide film is prevented from being excessively etched by the cleaning process in a subsequent step. Therefore, it is possible to prevent the problem of poor insulation between adjacent wiring lines and the conductive layer filling the contact amount.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제1도부터 제5도는 본 발명에 의하여 측벽에 열산화 방법에 의하여 형성된 측벽 산화막을 가지는 미세 접촉창 형성 방법을 보여주는 단면도들이다.1 to 5 are cross-sectional views showing a method for forming a fine contact window having a sidewall oxide film formed on the sidewall by a thermal oxidation method according to the present invention.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950066991A KR970052486A (en) | 1995-12-29 | 1995-12-29 | Method of forming contact window having sidewall oxide film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950066991A KR970052486A (en) | 1995-12-29 | 1995-12-29 | Method of forming contact window having sidewall oxide film |
Publications (1)
Publication Number | Publication Date |
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KR970052486A true KR970052486A (en) | 1997-07-29 |
Family
ID=66637935
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950066991A KR970052486A (en) | 1995-12-29 | 1995-12-29 | Method of forming contact window having sidewall oxide film |
Country Status (1)
Country | Link |
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KR (1) | KR970052486A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100558008B1 (en) * | 2003-12-29 | 2006-03-06 | 삼성전자주식회사 | method of forming interconnection lines in a semiconductor device |
-
1995
- 1995-12-29 KR KR1019950066991A patent/KR970052486A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100558008B1 (en) * | 2003-12-29 | 2006-03-06 | 삼성전자주식회사 | method of forming interconnection lines in a semiconductor device |
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