KR970051970A

KR970051970A - Semiconductor substrate formation method

Info

Publication number: KR970051970A
Application number: KR1019950046252A
Authority: KR
Inventors: 황준
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1995-12-02
Filing date: 1995-12-02
Publication date: 1997-07-29

Abstract

본 원은 반도체 기판 형성방법을 개시한다. 개시된 발명은 실리콘 기판의 셀 영역과 주변 영역을 식각에 의하여 단차를 부여하고, 이후 실리콘 기판상에 실리콘 기판상에 O⁺원자를 주입하여 SOI 기판을 형성하므로써, 소자의 형성시 셀 영역과 주변 영역과 토폴로지에 의한 문제점을 해결할 수 있어 소자의 신뢰성 및 수율을 향상시킬 수 있다.The present application discloses a method for forming a semiconductor substrate. The disclosed invention provides a step by etching a cell region and a peripheral region of a silicon substrate, and then injects O ⁺ atoms onto the silicon substrate to form an SOI substrate, thereby forming a cell region and a peripheral region in forming a device. It is possible to solve the problem caused by the over-topology, thereby improving the reliability and yield of the device.

Description

Semiconductor substrate formation method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도 (가) 내지 (라)는 본 발명의 [실시예1]에 따른 반도체 기판 형성 방법을 설명하기 위한 단면도.1A to 1D are cross-sectional views for explaining the method for forming a semiconductor substrate according to [Example 1] of the present invention.

Claims

Sequentially forming an oxide film and a silicon nitride film on the silicon substrate; Etching the oxide layer and the silicon nitride layer only in a cell formation region; Forming a field oxide layer by oxidizing the cell formation region exposed by the etching; Recessing the silicon substrate from which the field oxide film is removed; Injecting O ⁺ atoms over the entire structure; And annealing the silicon substrate.

The method of claim 1, wherein the substrate on which the silicon substrate is recessed is 0.5 to 2.0 μm from an upper surface of the substrate.

Applying a photosensitive film on the silicon substrate, and exposing and developing the cell formation region to form a mask pattern; Etching the lower silicon substrate in the form of the mask pattern; Ion implanting O ⁺ atoms onto the etched silicon substrate; And annealing the silicon substrate.

The method of claim 3, wherein the silicon substrate is etched to a depth of about 0.5 to 2.0 μm.

5. The method of claim 3, wherein the silicon substrate is etched, wherein 50% of the depth etched from the top of the silicon substrate is wet etched, and the remaining 50% is dry etched. Way.

※ Note: The disclosure is based on the initial application.