KR970051881A - Method for Coating Photosensitive Film of Semiconductor Device - Google Patents

Method for Coating Photosensitive Film of Semiconductor Device

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Publication number
KR970051881A
KR970051881A KR1019950054369A KR19950054369A KR970051881A KR 970051881 A KR970051881 A KR 970051881A KR 1019950054369 A KR1019950054369 A KR 1019950054369A KR 19950054369 A KR19950054369 A KR 19950054369A KR 970051881 A KR970051881 A KR 970051881A
Authority
KR
South Korea
Prior art keywords
semiconductor device
semiconductor substrate
photoresist film
photoresist
photosensitive film
Prior art date
Application number
KR1019950054369A
Other languages
Korean (ko)
Inventor
이창석
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950054369A priority Critical patent/KR970051881A/en
Publication of KR970051881A publication Critical patent/KR970051881A/en

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  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

1. 청구 범위에 기재된 발명이 속한 기술분야1. TECHNICAL FIELD OF THE INVENTION

반도체 소자 제조 방법.Semiconductor device manufacturing method.

2. 발명이 해결하려고 하는 기술적 과제2. The technical problem to be solved by the invention

종래에는 감광막의 부착력을 증대시키기 위하여 HMDS을 도포하였는데 이는 인체에 유해한 물질이기에 위험하고 도포시 약300℃의 고온에서 실시하여야 했고 온도조절이 제대로 되지 않으면 감광막의 접착력이 저하된다는 문제점으로 가지고 해결하고자 함.Conventionally, HMDS was applied to increase the adhesion of the photoresist film. This is dangerous because it is harmful to the human body and should be carried out at a high temperature of about 300 ° C during application. .

3. 발명의 해결방법의 요지3. Summary of Solution to Invention

HMDS를 사용하지 않고도 반도체 기판을 미세 가공하여 표면적을 증가시켜 감광막과 반도체 기판의 접착력을 증대시키고 상기 미세 가공시의 세공공정으로 반도체 기판의 파티클을 제거하여 양호한 감광막 패턴을 형성할 수 있는 반도체 소자의 감광막을 도포하고자 함.A semiconductor device capable of forming a good photoresist pattern by finely processing a semiconductor substrate without using HMDS to increase the surface area to increase the adhesion between the photoresist film and the semiconductor substrate, and to remove particles of the semiconductor substrate in a pore process during the micromachining process. To apply photoresist film.

4. 발명의 중요한 용도4. Important uses of the invention

반도체 소자의 반도체 기판에 감광막을 도포하는데 이용됨.Used to apply a photosensitive film to a semiconductor substrate of a semiconductor device.

Description

반도체 소자의 감광막 도포 방법Method for Coating Photosensitive Film of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1A도 내지 제1C도는 본 발명의 반도체 소자의 감광막 도포 방법에 따른 공정도.1A to 1C are process drawings according to the method for applying a photosensitive film to a semiconductor device of the present invention.

Claims (5)

반도체 소자의 감광막을 도포하는 방법에 있어서, 반도체 기판 상에 소정의 두께의 감광막을 도포하는 단계와, 소정의 감광막 용해액을 스프레이하는 단계와, 세정액을 이용하여 감광막이 선택적으로 용해된 부분의 반도체 기판을 식각하는 단계와, 잔류 감광막을 제거한 후, 원하는 감광막 패턴을 형성하는 단계를 포함하여 이루어진 반도체 소자의 감광막 도포 방법.A method of applying a photoresist film of a semiconductor device, the method comprising: applying a photoresist film having a predetermined thickness on a semiconductor substrate, spraying a predetermined photoresist solution solution, and a semiconductor in a portion where the photoresist film is selectively dissolved using a cleaning solution. A method of applying a photosensitive film to a semiconductor device comprising etching the substrate, and removing the residual photoresist film to form a desired photoresist pattern. 제1항에 있어서, 상기 감광막을 도포하는 두께는 약800Å인 것을 특징으로 하는 반도체 소자의 감광막 도포 방법.The method of claim 1, wherein the thickness of the photosensitive film is applied to the substrate. 제1항에 있어서, 상기 감광막 용해액은 부틸 아세테이트인 것을 특징으로 하는 반도체 소자의 감광막 도포 방법.The method of claim 1, wherein the photoresist solution is butyl acetate. 제3항에 있어서, 상기 부틸아세테트를 스프레이하는 양은 약5cc인 것을 특징으로 하는 반도체 소자의 감광막 도포 방법.4. The method of claim 3, wherein the spraying amount of butyl acetate is about 5 cc. 제1항에 있어서, 상기 세정액은 NH4OH인 것을 특징으로 하는 반도체 소자의 감광막 도포 방법.The method of claim 1, wherein the cleaning liquid is NH 4 OH. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950054369A 1995-12-22 1995-12-22 Method for Coating Photosensitive Film of Semiconductor Device KR970051881A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950054369A KR970051881A (en) 1995-12-22 1995-12-22 Method for Coating Photosensitive Film of Semiconductor Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950054369A KR970051881A (en) 1995-12-22 1995-12-22 Method for Coating Photosensitive Film of Semiconductor Device

Publications (1)

Publication Number Publication Date
KR970051881A true KR970051881A (en) 1997-07-29

Family

ID=66617374

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950054369A KR970051881A (en) 1995-12-22 1995-12-22 Method for Coating Photosensitive Film of Semiconductor Device

Country Status (1)

Country Link
KR (1) KR970051881A (en)

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