KR970030773A - Semiconductor device having electrostatic discharge protection means - Google Patents

Semiconductor device having electrostatic discharge protection means Download PDF

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Publication number
KR970030773A
KR970030773A KR1019950042647A KR19950042647A KR970030773A KR 970030773 A KR970030773 A KR 970030773A KR 1019950042647 A KR1019950042647 A KR 1019950042647A KR 19950042647 A KR19950042647 A KR 19950042647A KR 970030773 A KR970030773 A KR 970030773A
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KR
South Korea
Prior art keywords
semiconductor device
electrostatic discharge
discharge protection
protection means
region
Prior art date
Application number
KR1019950042647A
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Korean (ko)
Inventor
박영관
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950042647A priority Critical patent/KR970030773A/en
Publication of KR970030773A publication Critical patent/KR970030773A/en

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Abstract

본 발명은 정전방전 보호수단을 갖는 반도체장치를 개시한다. 본 발명에 의한 정전방전 보호수단을 갖는 반도체 장치는 정전방전 보호수단을 구비하는 반도체장치에 있어서, 상기 반도체장치의 드레인확산(drain diffusion)영역과 드레인 콘택영역 사이에 정전방전 보호수단을 구비한다.The present invention discloses a semiconductor device having electrostatic discharge protection means. A semiconductor device having electrostatic discharge protection means according to the present invention is a semiconductor device having electrostatic discharge protection means, comprising electrostatic discharge protection means between a drain diffusion region and a drain contact region of the semiconductor device.

본 발명에 의하면, 드레인 확산영역과 드레인 콘택영역사이에 ESD의 스트레스를 완화할 수 있는 영역을 더 구비함으로써, 게이트전극과 드레인(또는 소오스)영역에서 ESD 스트레스가 보다 적게 유도되며, 양호한 반도체 장치(Device)를 형성할 수 있다.According to the present invention, by further providing a region that can alleviate the stress of the ESD between the drain diffusion region and the drain contact region, less ESD stress is induced in the gate electrode and the drain (or source) region, a good semiconductor device ( Device) can be formed.

Description

정전방전보호 수단을 갖는 반도체장치Semiconductor device having electrostatic discharge protection means

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제 2도는 본 발명에 의한 정전방전보호 수단을 구비하는 반도체장치를 나타낸 도면이다.2 is a view showing a semiconductor device having an electrostatic discharge protection means according to the present invention.

Claims (3)

정전방전 보호수단을 구비하는 반도체장치에 있어서, 상기 반도체장치의 드레인확산(drain diffusion)영역과 드레인 콘택영역 사이에 정전방전 보호수단을 구비하는 것을 특징으로 하는 정전방전보호 수단을 갖는 반도체장치.A semiconductor device having electrostatic discharge protection means, the semiconductor device having electrostatic discharge protection means comprising electrostatic discharge protection means between a drain diffusion region and a drain contact region of said semiconductor device. 제 1항에 있어서, 상기 수단은 상기 드레인영역에 강하게 도핑된 불순물과 약하게 불순물로 도핑된 것을 특징으로 하는 정전방전보호 수단을 갖는 반도체장치.2. The semiconductor device as claimed in claim 1, wherein said means is doped with impurities heavily doped and weakly doped in said drain region. 제 1항에 있어서, 상기 수단은 N 또는 P채널의 드레인 확산(N 또는 P drain diffusion)영역과 드레인 콘택영역 사이에 형성된 N- 또는 P-드레인영역인 것을 특징으로 하는 정전방전보호 수단을 갖는 반도체장치.The semiconductor device according to claim 1, wherein said means is an N- or P-drain region formed between an N or P drain diffusion region and a drain contact region of an N or P channel. Device. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950042647A 1995-11-21 1995-11-21 Semiconductor device having electrostatic discharge protection means KR970030773A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950042647A KR970030773A (en) 1995-11-21 1995-11-21 Semiconductor device having electrostatic discharge protection means

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950042647A KR970030773A (en) 1995-11-21 1995-11-21 Semiconductor device having electrostatic discharge protection means

Publications (1)

Publication Number Publication Date
KR970030773A true KR970030773A (en) 1997-06-26

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950042647A KR970030773A (en) 1995-11-21 1995-11-21 Semiconductor device having electrostatic discharge protection means

Country Status (1)

Country Link
KR (1) KR970030773A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100305013B1 (en) * 1997-12-29 2001-10-19 박종섭 Semiconductor device having protection unit from electrostatic discharge

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100305013B1 (en) * 1997-12-29 2001-10-19 박종섭 Semiconductor device having protection unit from electrostatic discharge

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