KR970053922A - Static electricity protection - Google Patents

Static electricity protection Download PDF

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Publication number
KR970053922A
KR970053922A KR1019950046229A KR19950046229A KR970053922A KR 970053922 A KR970053922 A KR 970053922A KR 1019950046229 A KR1019950046229 A KR 1019950046229A KR 19950046229 A KR19950046229 A KR 19950046229A KR 970053922 A KR970053922 A KR 970053922A
Authority
KR
South Korea
Prior art keywords
drain
well contact
source
contact hole
input
Prior art date
Application number
KR1019950046229A
Other languages
Korean (ko)
Other versions
KR0164506B1 (en
Inventor
함석헌
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950046229A priority Critical patent/KR0164506B1/en
Publication of KR970053922A publication Critical patent/KR970053922A/en
Application granted granted Critical
Publication of KR0164506B1 publication Critical patent/KR0164506B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

본 발명은 웰 콘택과 가장 멀리 떨어진 드레인 영역과 입·출력 배선 영역사이에 저항을 형성하여 드레인의 주변에 전류가 밀집하여 보호 소자를 파괴하는 종래의 단점을 극복하므로써, 전류의 고른 분포를 가지도록 한 정전기 보호 소자에 관한 것으로서, 반도체 회로의 신뢰성을 향상시키는데 기여할 수 있다.The present invention forms a resistance between the well contact and the drain region farthest away from the input / output wiring region, thereby overcoming the conventional disadvantage of destroying the protection element by dense current around the drain, so as to have an even distribution of current. The present invention relates to an electrostatic protection device, which may contribute to improving the reliability of a semiconductor circuit.

Description

정전기 보호장치Static electricity protection

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 실시예에 따른 정전기 보호용 NMOS의 평면도.2 is a plan view of an NMOS for electrostatic protection according to an embodiment of the present invention.

제3도는 출력 전압에 따른 스트레스 전류값을 나타낸 그래프.3 is a graph showing the stress current value according to the output voltage.

Claims (2)

소오스와 드레인이 교대로 형성 되고, 소오스와 드레인 사이로 핑거형의 게이트 영역이 형성 되며; 입·출력 배선 영역이 각각의 드레인과 전기적으로 연결되고, 각각의 소오스와 웰 콘택이 접지 배선 영역과 전기적으로 연결되는 모스 트랜지스터에 있어서, 웰 콘택홀과 거리가 먼 드레인의 측면에 전류가 밀집하는 현상을 방지하기 위하여, 웰 콘택홀과 가장 거리가 멀리 떨어진 드레인의 콘택홀과 입·출력 배선 영역 사이에 저항이 형성된 것을 특징으로 하는 정전기 보호 장치.A source and a drain are formed alternately, and a finger gate region is formed between the source and the drain; In a MOS transistor in which an input / output wiring region is electrically connected to each drain, and each source and well contact is electrically connected to a ground wiring region, current is concentrated on the side of the drain far from the well contact hole. In order to prevent the phenomenon, a resistance is formed between the contact hole of the drain farthest from the well contact hole and the input / output wiring area. 제1항에 있어서, 상기 저항은 확산 저항과 폴리실리콘 저항중 하나인 것을 특징으로 하는 정전기 보호 장치.The device of claim 1, wherein the resistor is one of a diffusion resistor and a polysilicon resistor. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950046229A 1995-12-02 1995-12-02 Protecting device from static electricity KR0164506B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950046229A KR0164506B1 (en) 1995-12-02 1995-12-02 Protecting device from static electricity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950046229A KR0164506B1 (en) 1995-12-02 1995-12-02 Protecting device from static electricity

Publications (2)

Publication Number Publication Date
KR970053922A true KR970053922A (en) 1997-07-31
KR0164506B1 KR0164506B1 (en) 1998-12-15

Family

ID=19437469

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950046229A KR0164506B1 (en) 1995-12-02 1995-12-02 Protecting device from static electricity

Country Status (1)

Country Link
KR (1) KR0164506B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100336571B1 (en) * 1999-06-29 2002-05-11 박종섭 ESD circuit and manufacturing method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990024644A (en) * 1997-09-04 1999-04-06 윤종용 Transistor connection structure to prevent electrostatic destruction

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100336571B1 (en) * 1999-06-29 2002-05-11 박종섭 ESD circuit and manufacturing method

Also Published As

Publication number Publication date
KR0164506B1 (en) 1998-12-15

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