KR970030743A - 반도체 패키지의 리드프레임 제작방법 및 이를 이용한 반도체 패키지의 제조공정과 구조 - Google Patents

반도체 패키지의 리드프레임 제작방법 및 이를 이용한 반도체 패키지의 제조공정과 구조 Download PDF

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Publication number
KR970030743A
KR970030743A KR1019950041843A KR19950041843A KR970030743A KR 970030743 A KR970030743 A KR 970030743A KR 1019950041843 A KR1019950041843 A KR 1019950041843A KR 19950041843 A KR19950041843 A KR 19950041843A KR 970030743 A KR970030743 A KR 970030743A
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South Korea
Prior art keywords
polyimide
semiconductor package
lead frame
layer
lead
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KR1019950041843A
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English (en)
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KR100198313B1 (ko
Inventor
신원선
이원균
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황인길
아남산업주식회사
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Priority to KR1019950041843A priority Critical patent/KR100198313B1/ko
Publication of KR970030743A publication Critical patent/KR970030743A/ko
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Publication of KR100198313B1 publication Critical patent/KR100198313B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

본 발명은 반도체 패키지의 리드프레임 제작방법 및 이를 이용한 반도체 패키지의 제조공정과 구조에 관한 것으로, 리드프레임의 재료인 구리(Cu)에 폴리이미드(Polyimide)를 코팅하여 폴리이미드(PI)층을 형성한 후, 스템핑(Stamping)에 의해 칩 탑재판과 리드 및 타이바 등을 형성하여 리드 프레임을 제작하는 것으로, 상기 폴리이미드(PI)에 의해 컴파운드와의 접착력을 향상시키고, 계면박리 및 크랙의 발생을 방지하여 패키지의 신뢰성을 향상시킬 수 있다.

Description

반도체 패키지의 리드프레임 제작방법 및 이를 이용한 반도체 패키지의 제조공정과 구조
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 2도는 본 발명에 따른 반도체 패키지의 구조를 나타낸 단면도.

Claims (10)

  1. 리드프레임의 재료인 구리(Cu)에 폴리이미드(Polyimide)를 코팅하여 폴리이미드(PI)층을 형성한 후, 스템핑(Stamping)에 의해 칩 탑재판과 리드 및 타이바 등을 형성하여 반도체 패키지의 리드프레임 제작 방법.
  2. 제 1항에 있어서, 상기 폴리이미드(PI)층은 형성전에 은(Ag) 도금을 하는 것을 특징으로 하는 반도체 패키지의 리드프레임 제작방법.
  3. 제 1항에 있어서, 상기 폴리이미드(PI)층의 형성후에 은(Ag) 도금을 하는 것을 특징으로 하는 반도체 패키지의 리드프레임 제작방법.
  4. 제 2항 또는 제 3항에 있어서, 상기 은(Ag) 도금은 부분적으로 도금한 것을 특징으로 하는 반도체 패키지의 리드프레임 제작방법.
  5. 제 1항에 있어서, 상기 폴리이미드(PI)를 갖는 리드프레임에 블랙 산화(Black Oxide)층을 처리한 것을 특징으로 하는 반도체 패키지의 리드프레임 제작방법.
  6. 둘레에 다수의 리드가 배열되고, 상기 다수의 리드 중앙부에는 반도체 칩이 탑재되는 칩 탑재판이 구비되며, 상기 칩 탑재판은 다운셋을 가지면서 일체로 형성된 타이바에 연결 고정된 리드프레임에 있어서, 상기 리드프레임의 저면에 폴리이미드(Polyimide)층이 접착된 것을 특징으로 하는 반도체 패키지의 리드프레임 구조.
  7. 제 6항에 있어서, 상기 폴리이미드(PI)층을 갖는 리드프레임에 블랙 산화(Black Oxide)처리 된 것을 특징으로 하는 반도체 패키지의 리드프레임 제작방법.
  8. 다이본딩공정, 와이어본딩공정, 몰딩공정, 트림공정, 마킹공정, 포밍공정 등으로 이루어진 반도체 패키지 제조공정에 있어서, 상기 트림공정 후에 외부로 인출된 리드의 저면에 접착되어 있는 플로이미드(PI)층을 제거하는 폴리이미드 스트립핑(Polyimide Stripping)공정, 상기 공정을 거친 후 솔더 도금하는 솔더 플에이팅(Solder Plating)공정을 포함하는 것을 특징으로 하는 반도체 패키지의 제조공정.
  9. 제 8항에 있어서, 폴리이미드 스트립핑(Polyimide Stripping)공정은 강알칼리를 사용하여 폴리이미드(PI)를 제거하는 것을 특징으로 하는 반도체 패키지의 제조공정.
  10. 칩 탑재판의 상부에 에폭시에 의해 반도체 칩이 부착되고, 상기 반도체 칩 상의 칩패드와 리드는 와이어로 본딩되며, 그 외부는 산화 및 부식을 방지하기 위하여 컴파운드로 몰딩된 반도체 패키지 구조에 있어서, 상기 칩 탑재판과 리드의 저면에 폴리이미드(PI)가 접착된 것을 특징으로 하는 반도체 패키지 구조.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950041843A 1995-11-17 1995-11-17 반도체패키지의 리드프레임 제조방법 및 이를 이용한 반도체패키지의 제조방법 KR100198313B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950041843A KR100198313B1 (ko) 1995-11-17 1995-11-17 반도체패키지의 리드프레임 제조방법 및 이를 이용한 반도체패키지의 제조방법

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Application Number Priority Date Filing Date Title
KR1019950041843A KR100198313B1 (ko) 1995-11-17 1995-11-17 반도체패키지의 리드프레임 제조방법 및 이를 이용한 반도체패키지의 제조방법

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KR970030743A true KR970030743A (ko) 1997-06-26
KR100198313B1 KR100198313B1 (ko) 1999-06-15

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