KR970024333A - Method for manufacturing a semiconductor device having a cylindrical cantilever - Google Patents

Method for manufacturing a semiconductor device having a cylindrical cantilever Download PDF

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Publication number
KR970024333A
KR970024333A KR1019950036483A KR19950036483A KR970024333A KR 970024333 A KR970024333 A KR 970024333A KR 1019950036483 A KR1019950036483 A KR 1019950036483A KR 19950036483 A KR19950036483 A KR 19950036483A KR 970024333 A KR970024333 A KR 970024333A
Authority
KR
South Korea
Prior art keywords
cantilever
oxide film
polysilicon layer
film pattern
nitride
Prior art date
Application number
KR1019950036483A
Other languages
Korean (ko)
Inventor
오석영
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950036483A priority Critical patent/KR970024333A/en
Publication of KR970024333A publication Critical patent/KR970024333A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Pressure Sensors (AREA)

Abstract

원기둥형의 캔틸레버(cantilever)를 구비한 반도체소자 제조방법에 관하여 기재하고 있다. 반도체 기판 위에 패드산화막을 형성한 다음 선택적으로 식각하여 접촉창을 형성하고, 상기 패드산화막 상에 폴리실리콘층을 형성한 다음, 상기 폴리실리콘층 상에 질화물을 증착한 다음 패터닝하여 질화막 패턴을 형성한다. 이어서, 질화막 패턴이 형성된 상기 결과물에 대한 열산화공정을 진행하여 열산화막 및 상기 기판과 접속되는 원기둥 모양의 캔틸레버를 형성하고, 상기 질화막 패턴을 제거한 다음, 상기 열산화막의 일부를 식각한 다음, 상기 캔탤레버와 그 주변의 소자를 연결하기 위한 이온주입을 실시한다. 따라서, 수직 및 수평방향의 진동을 감지할 수 있는 원기둥형의 캔틸레버와 기판위의 주변소자들을 반도체 기판의 접합을 통하여 용이하게 연결할 수 있다.A method of manufacturing a semiconductor device having a cylindrical cantilever is described. A pad oxide film is formed on the semiconductor substrate and then selectively etched to form a contact window, a polysilicon layer is formed on the pad oxide film, nitride is deposited on the polysilicon layer, and then patterned to form a nitride film pattern. . Subsequently, a thermal oxidation process is performed on the resultant formed with the nitride film pattern to form a cylindrical cantilever connected to the thermal oxide film and the substrate, the nitride film pattern is removed, and a portion of the thermal oxide film is etched. Ion implantation is performed to connect the cantilever and the elements around it. Therefore, the cylindrical cantilever capable of detecting the vertical and horizontal vibrations and the peripheral elements on the substrate can be easily connected through the bonding of the semiconductor substrate.

Description

원기둥형 캔틸레버를 구비한 반도체소자 제조방법Method for manufacturing a semiconductor device having a cylindrical cantilever

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제5도 내지 제8도는 본 발명의 일 실시예에 따른 캔틸레버 제조방법을 설명하기 위해 도시한 단면도.5 to 8 are cross-sectional views for explaining the cantilever manufacturing method according to an embodiment of the present invention.

Claims (2)

반도체 기판 위에 패드산화막을 형성한 다음 선택적으로 식각하여 접촉창을 형성하는 단계; 상기 패드산화막 상에 폴리실리콘층을 형성하는 단계; 상기 폴리실리콘층 상에 질화물을 증착한 다음 패터닝하여 질화막 패턴을 형성하는 단계; 질화막 패턴이 형성된 상기 결과물에 대한 열산화공정을 진행하여 열산화막 및 상기 기판과 접속되는 원기둥 모양의 캔틸레버를 형성하는 단계; 상기 질화막 패턴을 제거하는 단계; 및 상기 열산화막의 일부를 식각한 다음, 상기 캔탤레버와 그 주변의 소자를 연결하기 위한 이온주입을 실시하는 단계를 구비하는 것을 특징으로 하는 반도체 소자 제조방법.Forming a pad oxide film on the semiconductor substrate and then selectively etching to form a contact window; Forming a polysilicon layer on the pad oxide film; Depositing nitride on the polysilicon layer and then patterning to form a nitride film pattern; Performing a thermal oxidation process on the resultant product on which a nitride film pattern is formed to form a cylindrical cantilever connected to the thermal oxide film and the substrate; Removing the nitride film pattern; And etching a portion of the thermal oxide film, and then performing ion implantation to connect the cantilever and a device around the cantilever. 제1항에 있어서, 상기 캔탤레버와 상기 반도체 기판의 접촉이 원활하도록 상기 폴리실리콘층 형성후 캔틸레버의 지지대가 될 부분에 이온주입하여 후속 열처리 공정을 통해 접촉저항을 향상시키는 것을 특징으로 하는 반도체 소자 제조방법.The semiconductor device of claim 1, wherein after forming the polysilicon layer to facilitate contact between the cantilever and the semiconductor substrate, ion implantation is performed in a portion to be a support of the cantilever to improve contact resistance through a subsequent heat treatment process. Manufacturing method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950036483A 1995-10-20 1995-10-20 Method for manufacturing a semiconductor device having a cylindrical cantilever KR970024333A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950036483A KR970024333A (en) 1995-10-20 1995-10-20 Method for manufacturing a semiconductor device having a cylindrical cantilever

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950036483A KR970024333A (en) 1995-10-20 1995-10-20 Method for manufacturing a semiconductor device having a cylindrical cantilever

Publications (1)

Publication Number Publication Date
KR970024333A true KR970024333A (en) 1997-05-30

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950036483A KR970024333A (en) 1995-10-20 1995-10-20 Method for manufacturing a semiconductor device having a cylindrical cantilever

Country Status (1)

Country Link
KR (1) KR970024333A (en)

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