KR970023710A - Fine contact formation method of semiconductor device - Google Patents

Fine contact formation method of semiconductor device Download PDF

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Publication number
KR970023710A
KR970023710A KR1019950034947A KR19950034947A KR970023710A KR 970023710 A KR970023710 A KR 970023710A KR 1019950034947 A KR1019950034947 A KR 1019950034947A KR 19950034947 A KR19950034947 A KR 19950034947A KR 970023710 A KR970023710 A KR 970023710A
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KR
South Korea
Prior art keywords
pattern
semiconductor device
fine contact
forming
formation method
Prior art date
Application number
KR1019950034947A
Other languages
Korean (ko)
Inventor
차동호
이중현
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950034947A priority Critical patent/KR970023710A/en
Publication of KR970023710A publication Critical patent/KR970023710A/en

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  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

본 발명은 반도체장치의 미세콘택 형성방법에 관해 개시한다. 본 발명의 미세콘택 형성방법은 반도체장치의 미세 콘택형성방법에 있어서, 상기 미세패턴을 형성하는 주패턴과 상기 주패턴의 측부에 구비된 회절수단으로 구성된 신규한 마스크패턴을 이용하는 것을 특징으로 한다.The present invention discloses a method for forming a micro contact in a semiconductor device. The fine contact forming method of the present invention is characterized by using a novel mask pattern comprising a main pattern for forming the fine pattern and diffraction means provided on the side of the main pattern.

본 발명에 의하면 종래의 주 패턴의 측부에 한계해상도보다 작은 패턴인 더미라인(dummy)을 구비하는 신규한 마스크패턴을 이용함으로써, 종래의 한계해상도를 극복하는 미세콘택을 형성할 수 있다.According to the present invention, by using a novel mask pattern having a dummy line which is a pattern smaller than the limit resolution on the side of the conventional main pattern, it is possible to form a fine contact that overcomes the conventional limit resolution.

Description

반도체장치의 미세콘택 형성방법Fine contact formation method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명에 의한 미세콘택형성 마스크 패턴이다,2 is a microcontact formation mask pattern according to the present invention,

제3도는 본 발명에 의해 형성된 콘택홀의 프로파일을 나타낸 도면이다,3 is a view showing a profile of a contact hole formed by the present invention,

제4도는 본 발명에 의한 미세콘택 형성패턴에 입사하는 광의 세기 분포를 나타낸 도면이다.4 is a view showing the intensity distribution of light incident on the microcontact formation pattern according to the present invention.

Claims (4)

반도체장치의 미세 콘택형성방법에 있어서, 상기 미세패턴을 형성하는 주패턴과 상기 주패턴의 측부에 구비된 회절수단으로 구성된 신규한 마스크패턴을 이용하는 것을 특징으로 하는 반도체장치의 미세콘택 형성방법.A method for forming a fine contact in a semiconductor device, the method comprising: forming a micro pattern, and using a novel mask pattern comprising a diffraction means provided on a side of the main pattern. 제2항에 있어서, 상기 더미라인(dummy)은 종래의 한계해상도보다 작은 패턴으로 형성하는 것을 특징으로 하는 반도체장치의 미세콘택 형성방법.The method of claim 2, wherein the dummy line is formed in a pattern smaller than a conventional limit resolution. 제1항에 있어서, 상기 주패턴은 H/T PSM(Hauf Tone PSM)을 사용하는 것을 특징으로 하는 반도체 장치의 미세콘택 형성방법.The method of claim 1, wherein the main pattern is H / T PSM (Hauf Tone PSM). 제1항 또는 제2항에 있어서, 상기 더미라인 및 주패턴을 투과하는 광은 서로 180℃의 위상차를 발생시키는 것을 특징으로 하는 반도체장치의 미세콘택 형성방법.The method of claim 1 or 2, wherein the light passing through the dummy line and the main pattern generates a phase difference of 180 ° C from each other. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950034947A 1995-10-11 1995-10-11 Fine contact formation method of semiconductor device KR970023710A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950034947A KR970023710A (en) 1995-10-11 1995-10-11 Fine contact formation method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950034947A KR970023710A (en) 1995-10-11 1995-10-11 Fine contact formation method of semiconductor device

Publications (1)

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KR970023710A true KR970023710A (en) 1997-05-30

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KR1019950034947A KR970023710A (en) 1995-10-11 1995-10-11 Fine contact formation method of semiconductor device

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KR (1) KR970023710A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100949889B1 (en) * 2008-03-17 2010-03-25 주식회사 하이닉스반도체 The exposure mask and the manufacturing method of semiconductor device using the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100949889B1 (en) * 2008-03-17 2010-03-25 주식회사 하이닉스반도체 The exposure mask and the manufacturing method of semiconductor device using the same

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