KR970018884A - Laser diode manufacturing method - Google Patents
Laser diode manufacturing method Download PDFInfo
- Publication number
- KR970018884A KR970018884A KR1019950032093A KR19950032093A KR970018884A KR 970018884 A KR970018884 A KR 970018884A KR 1019950032093 A KR1019950032093 A KR 1019950032093A KR 19950032093 A KR19950032093 A KR 19950032093A KR 970018884 A KR970018884 A KR 970018884A
- Authority
- KR
- South Korea
- Prior art keywords
- etching solution
- laser diode
- inp
- layer
- etching
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
- Weting (AREA)
Abstract
본 발명은 광통신용 반도체 레이저 다이오드 제조방법에 관한것으로, 선택적 식각용액과 비선택적 식각용액을 사용하는 2단계 습식식각을 함으로써 역 메사 구조의 표면 상태의 거침과 깨끗하지 못한 단점을 해결할 수 있는 기술로 역메사 형태가 요구되는 모든 화합물 반도체소자에 적용할 수 있는 것이다.The present invention relates to a method for manufacturing a semiconductor laser diode for an optical communication, by performing a two-step wet etching using a selective etching solution and a non-selective etching solution to solve the rough and unclean disadvantages of the surface state of the reverse mesa structure It is applicable to all compound semiconductor devices that require a reverse mesa form.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1도 내지 제5도는 본 발명의 실시예에 레이저 다이오드를 제조하는 단계를 도시한 단면도.1 through 5 are cross-sectional views illustrating steps of manufacturing a laser diode in an embodiment of the present invention.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950032093A KR100372768B1 (en) | 1995-09-27 | 1995-09-27 | Method for fabricating laser diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950032093A KR100372768B1 (en) | 1995-09-27 | 1995-09-27 | Method for fabricating laser diode |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970018884A true KR970018884A (en) | 1997-04-30 |
KR100372768B1 KR100372768B1 (en) | 2003-05-12 |
Family
ID=37416653
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950032093A KR100372768B1 (en) | 1995-09-27 | 1995-09-27 | Method for fabricating laser diode |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100372768B1 (en) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5362675A (en) * | 1991-12-24 | 1994-11-08 | Samsung Electronics Co., Ltd. | Manufacturing method of laser diode and laser diode array |
-
1995
- 1995-09-27 KR KR1019950032093A patent/KR100372768B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100372768B1 (en) | 2003-05-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
LAPS | Lapse due to unpaid annual fee |