KR970054966A - Manufacturing method of laser diode for optical communication - Google Patents

Manufacturing method of laser diode for optical communication Download PDF

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Publication number
KR970054966A
KR970054966A KR1019950050430A KR19950050430A KR970054966A KR 970054966 A KR970054966 A KR 970054966A KR 1019950050430 A KR1019950050430 A KR 1019950050430A KR 19950050430 A KR19950050430 A KR 19950050430A KR 970054966 A KR970054966 A KR 970054966A
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KR
South Korea
Prior art keywords
layer
inp
laser diode
etching solution
hbr
Prior art date
Application number
KR1019950050430A
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Korean (ko)
Inventor
강중구
한상국
최보훈
정승조
신영근
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950050430A priority Critical patent/KR970054966A/en
Publication of KR970054966A publication Critical patent/KR970054966A/en

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Abstract

본 발명은 광통신용 레이저 다이오드 제조방법에 관한 것으로, 고속(HIGH SPEED)을 목적으로 하는 소자를 제작할 경우에는 소자특성에 나쁜 영향을 주는 접합정전용량을 줄이기 위해 더블채널을 형성하는 레이저 다이오드에서 소자격리용 홈을 BW:HBr:H2O의 비선택적 식각용액과 H3PO:H2O2:H2O의 선택적 식각용액 및 BW:HBr;H2O의 비선택적 식각용액의 3단계 식각 방법으로 형성하여 홈의 상부 모서리부가 라운드되도록 한다. 그로인하여 소자격리용 홈의 표면에 보호막 중착이나 금속막 중착시 보호막이나 금속이 끊기는 현상을 방지하여 신뢰성있는 중착 조건을 이룰 수 있다.The present invention relates to a method for manufacturing a laser diode for optical communication, in the case of fabricating a device for the purpose of high speed (HIGH SPEED) in the laser diode forming a double channel to reduce the junction capacitance, which adversely affects the device characteristics Lysing groove is a three-step etching method of the non-selective etching solution of BW: HBr: H 2 O, the selective etching solution of H 3 PO: H 2 O 2 : H 2 O and the non-selective etching solution of BW: HBr; H 2 O It is formed so that the upper edge of the groove round. As a result, the protective film or metal may be prevented from being broken when the protective film is deposited or the metal film is deposited on the surface of the device isolation groove, thereby achieving reliable deposition conditions.

Description

광통신용 레이저 다이오드 제조방법Manufacturing method of laser diode for optical communication

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제5도는 본 발며에 의해 레이저 다이오드를 제조하는 단계를 도시한 단면도.5 is a sectional view showing a step of manufacturing a laser diode by the present invention.

Claims (3)

n-InP 기판 상부에 메사구조의 n-InP 버퍼층, InGaAsP층 및 p-InP층을 형성하고, 상기 메사 구조의 측벽에 전류 차단층으로 p-InP 층과 n-InP을 형성하고, 전체구조 상부에 p-InP층, p-InGaAs층이 순차적으로 형성되는 레이저 다이오드 제조방법에 있어서, 각각의 레이저 다이오드를 격리하기 위하여 상기 p-InGaAs층 상부에 소자격리 마스크용 감광막 패턴을 형성하는 단계와, 상기 p-InGaAs층에서 상기 InP 기판의 일정 부분 까지 BW:HBr:H2O의 비선택적 식각용액으로 식각하여 소자격리용 홈을 형성하는 단계와, H3PO:H2O2:H2O의 식각용액으로 상기 P-InGaAs층을 선택적으로 일정한 깊이 식각하는 단계와, BW:HBr:H2O의 비선택적 식각용액에서 짧은 시간동안 식각하여 상기 InGaAs와 InP층이 모두 일정 깊이 식각되는 동시에 소자격리용 홈의 상부 모서리부가 라운드 되도록 하는 단계와, 상기 감광막패턴을 제거하고, 소자격리용 홈의 표면에 보호막과 금속막을 증착하는 단계를 포함하는 레이저 다이오드 제조방법.A n-InP buffer layer, an InGaAsP layer, and a p-InP layer of a mesa structure are formed on an n-InP substrate, and a p-InP layer and n-InP are formed on a sidewall of the mesa structure as a current blocking layer. A method of manufacturing a laser diode in which a p-InP layer and a p-InGaAs layer are sequentially formed on the semiconductor device, the method comprising: forming a photoresist pattern for device isolation mask on the p-InGaAs layer to isolate each laser diode; etching a p-InGaAs layer with a non-selective etching solution of BW: HBr: H 2 O to a predetermined portion of the InP substrate to form a device isolation groove, and forming H 3 PO: H 2 O 2 : H 2 O Selectively etching the P-InGaAs layer with an etching solution, and etching the non-selective etching solution of BW: HBr: H 2 O for a short time to etch both the InGaAs and InP layers at a predetermined depth. The upper edge of the groove System and method for manufacturing a laser diode, comprising the step of removing the photosensitive pattern, depositing the protective film and the metal film on the surface of the small Lyon qualified home. 제1항에 있어서, 상기 BW:HBr:H2O의 비율은 약 1:1:1인 것을 특징으로 하는 레이저 다이오드 제조방법.The method of claim 1, wherein the ratio of BW: HBr: H 2 O is about 1: 1: 1. 제1항에 있어서, 상기 H3PO:H2O2:H2O의 비율은 약 1:1:10인 것을 특징으로 하는 레이저 다이오드 제조방법.The method of claim 1, wherein the ratio of H 3 PO: H 2 O 2 : H 2 O is about 1: 1: 10. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950050430A 1995-12-15 1995-12-15 Manufacturing method of laser diode for optical communication KR970054966A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950050430A KR970054966A (en) 1995-12-15 1995-12-15 Manufacturing method of laser diode for optical communication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950050430A KR970054966A (en) 1995-12-15 1995-12-15 Manufacturing method of laser diode for optical communication

Publications (1)

Publication Number Publication Date
KR970054966A true KR970054966A (en) 1997-07-31

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Application Number Title Priority Date Filing Date
KR1019950050430A KR970054966A (en) 1995-12-15 1995-12-15 Manufacturing method of laser diode for optical communication

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KR (1) KR970054966A (en)

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