KR960002976A

KR960002976A - Laser diode manufacturing method

Info

Publication number: KR960002976A
Application number: KR1019940015444A
Authority: KR
Inventors: 강중구; 김돈수; 강명구; 김남준; 김앙서; 신영근
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1994-06-30
Filing date: 1994-06-30
Publication date: 1996-01-26

Abstract

본 발명은 반도체 레이저 다이오드 제조방법에 관한 것으로, 특히, PBH(Planar Buried Heterostructure)레이져 다이오드 제작시 발생하는 접합 정전용량을 줄이기 위해 3단계 습식 식각방법으로 격리홈을 형성하여 격리 홈의 상부 모서리가 라운딩되도록 형성하고, 보호막과 금속층을 형성할때 피복성을 증대시키는 기술이다.The present invention relates to a method for manufacturing a semiconductor laser diode, and in particular, to form a junction groove by a three-step wet etching method in order to reduce the junction capacitance generated during the production of Planar Buried Heterostructure (PBH) laser diode, the upper edge of the isolation groove is rounded. It forms as much as possible, and it is a technique which increases a coating | cover property when forming a protective film and a metal layer.

Description

Laser diode manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제5A도 내지 제5D도는 본 발명에 의해 격리홈을 형성하는 단계를 도시한 단면도.5A to 5D are cross-sectional views showing the step of forming the isolation groove according to the present invention.

Claims

The n + -InP buffer layer, the u-InGaAsP layer and P-InP layer, which are used as the active layer, are sequentially stacked on the n + -InP substrate, and the P-InP layer, the u-InGaAsP layer, and the n + -InP buffer layer are partially etched. Forming a (Mesa) type protrusion, growing a P-InP layer and an n-InP layer used as a current limiting layer on the side of the protrusion, and then laminating a P-InP layer and a u-InGaAsP layer on top of the entire structure. Then, in the laser diode manufacturing method comprising the step of forming the isolation groove, the step of removing the isolation mask, and depositing a protective film and a metal layer, in the step of forming the isolation groove, forming the isolation mask. Next, wet etching is performed from the P + -InGaAsP layer in the separation region to the n + -InP layer with a non-selective etching solution to form an isolation groove, and the constant etching of the P + -InGaAsP layer in the etching solution for selectively etching the P + -InGaAsP layer. Etching portions, non-selective etching By etching for a short time in a solution that the edge of the isolation grooves at the same time that a portion of etching the InGaAsP layer and the InP layer includes forming a round shape laser diode manufacturing method.

The method of claim 1, wherein the non-selective etching solution is HBr: H ₂ O ₂ : H ₂ O; HC1 or HBr; HNO ₃ ; H ₃ O; H ₂ O ₂ .

※ Note: The disclosure is based on the initial application.