KR970018766A - Horizontal Chemical Vapor Deposition of Semiconductor Manufacturing Equipment - Google Patents

Horizontal Chemical Vapor Deposition of Semiconductor Manufacturing Equipment Download PDF

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Publication number
KR970018766A
KR970018766A KR1019950031808A KR19950031808A KR970018766A KR 970018766 A KR970018766 A KR 970018766A KR 1019950031808 A KR1019950031808 A KR 1019950031808A KR 19950031808 A KR19950031808 A KR 19950031808A KR 970018766 A KR970018766 A KR 970018766A
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KR
South Korea
Prior art keywords
chemical vapor
vapor deposition
reaction chamber
reactor
supplied
Prior art date
Application number
KR1019950031808A
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Korean (ko)
Inventor
유영섭
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950031808A priority Critical patent/KR970018766A/en
Publication of KR970018766A publication Critical patent/KR970018766A/en

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Abstract

본 발명은 반도체 제조공정중 화학증착장비에 관한 것으로 특히 프로세스 튜브의 구조를 개선하여 공정의 균일성을 향상하기 위한 것이다. 공정시 N2O 가스가 반응실인 프로세스 튜브의 앞 플랜지부위에서 직접 공급되므로 활성화 되지 않은 상태에서 공정을 진행함으로써 균일성이 좋지 않았다. 본 발명은 상술한 문제점을 극복하기 위한 것으로 반응실내에 가스를 공급하여 증착공정을 하는 저압 화학 기상 증착시스템에 있어서, 공급되는 반응가스를 반응실에 이중구조의 튜브나 분사기를 통해 활성화시켜 공급하여 균일한 증착효과를 가져오도록 한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to chemical vapor deposition equipment in semiconductor manufacturing processes, and in particular, to improve process uniformity by improving the structure of process tubes. During the process, N 2 O gas was supplied directly from the front flange of the process tube, which is the reaction chamber. The present invention is to overcome the above-mentioned problems, in the low pressure chemical vapor deposition system to supply the gas into the reaction chamber to perform the deposition process, by supplying the reaction gas supplied to the reaction chamber through a double tube or injector It is to bring a uniform deposition effect.

Description

반도체 제조장비의 수평방식 화학증착장치Horizontal Chemical Vapor Deposition of Semiconductor Manufacturing Equipment

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 전체적인 구성도.1 is an overall configuration diagram of the present invention.

Claims (4)

반응실내에 가스를 공급하여 증착공정을 하는 저압 화학 기상 증착시스템에 있어서, 공급되는 반응가스를 반응실에 활성화시켜 공급하는 것을 특징으로 하는 반도체 제조장비의 수평방식 화학증착장치(CVD).A low pressure chemical vapor deposition system for supplying gas into a reaction chamber and performing a deposition process, wherein the supplied reaction gas is activated and supplied to the reaction chamber. 제1항에 있어서, 상기 반응가스는 반응로를 이중구조로 형성하고 이 반응로의 뒷면의 플랜지부위에서 바깥쪽 튜브를 통해 유도되어 전면의 플랜지부위에서 내부 튜브로 공급되도록 하는 것을 특징으로 하는 반도체 제조장비의 수평방식 화학증착장치.The semiconductor according to claim 1, wherein the reaction gas forms a double structure of the reactor and is guided through the outer tube at the flange of the rear side of the reactor to be supplied to the inner tube at the flange of the front side. Horizontal chemical vapor deposition equipment in manufacturing equipment. 제1항에 있어서, 반응로의 뒷 플랜지부위에서 반응로 내부의 전부위 방향으로 소정길이로 형성된 분사기(injector)을 통해 반응가스를 분사 공급하는 것을 특징으로 하는 반도체 제조장비의 수평방식 화학증착장치.The horizontal type chemical vapor deposition apparatus of claim 1, wherein the reaction gas is injected through an injector formed at a predetermined length from the rear flange portion of the reactor in the direction of the top of the reactor. . 제1항 또는 제2항에 있어서, 앞 플랜지와 내측 튜브의 간격과, 앞 플랜지와 분사기 끝단 사이의 간격을 각각 100㎜ 이내 한 것을 특징으로 하는 반도체 제조장비의 수평방식 화학증착장치.The horizontal type chemical vapor deposition apparatus according to claim 1 or 2, wherein the distance between the front flange and the inner tube and the distance between the front flange and the tip of the injector are each within 100 mm. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950031808A 1995-09-26 1995-09-26 Horizontal Chemical Vapor Deposition of Semiconductor Manufacturing Equipment KR970018766A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950031808A KR970018766A (en) 1995-09-26 1995-09-26 Horizontal Chemical Vapor Deposition of Semiconductor Manufacturing Equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950031808A KR970018766A (en) 1995-09-26 1995-09-26 Horizontal Chemical Vapor Deposition of Semiconductor Manufacturing Equipment

Publications (1)

Publication Number Publication Date
KR970018766A true KR970018766A (en) 1997-04-30

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950031808A KR970018766A (en) 1995-09-26 1995-09-26 Horizontal Chemical Vapor Deposition of Semiconductor Manufacturing Equipment

Country Status (1)

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KR (1) KR970018766A (en)

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