KR970017903A - Semiconductor process source gas supply method and apparatus therefor - Google Patents

Semiconductor process source gas supply method and apparatus therefor Download PDF

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Publication number
KR970017903A
KR970017903A KR1019950029467A KR19950029467A KR970017903A KR 970017903 A KR970017903 A KR 970017903A KR 1019950029467 A KR1019950029467 A KR 1019950029467A KR 19950029467 A KR19950029467 A KR 19950029467A KR 970017903 A KR970017903 A KR 970017903A
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South Korea
Prior art keywords
source gas
gas supply
tube
supplied
source
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KR1019950029467A
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Korean (ko)
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KR0174987B1 (en
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유영섭
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김광호
삼성전자 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

본 발명은 반도체 제조공정에 있어서 반도체 제조공정에 공급되는 소오스 가스를 보다 활성화시킨 상태로 공정에 제공함으로써 웨이퍼의 균일성(Uniformity)을 향상시킨 반도체 공정 소오스 가스 공급방법 및 그 장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor process source gas supply method and apparatus for improving the uniformity of a wafer by providing the source gas supplied to the semiconductor manufacturing process in a more activated state in the semiconductor manufacturing process.

본 발명의 반도체 공정 소오스 가스 공급방법은 2 이상의 소오스 가스들이 믹싱부에서 혼합되어 가스주입구를 통해 공정 튜브내로 공급되도록 구성되는 공정 소오스 가스 공급방법에 있어서, 공정 튜브내의 가스공급라인의 단부를 프로세스 인너 튜브내로 소정 길이 만큼 연장하여 연장부를 형성함으로써 소오스 가스들이 보다 활성화되도록 하고, 믹싱부없이 각각 단독으로 공정 튜브내로 공급되도록 한 것을 특징으로 한다.The method for supplying a semiconductor process source gas of the present invention is a process source gas supply method in which two or more source gases are mixed in a mixing unit and supplied into a process tube through a gas inlet. By extending the tube by a predetermined length to form an extension, the source gases may be more activated, and each of them may be supplied into the process tube alone without a mixing portion.

상기 연장부를 형성하는 대신에 또는 부가하여 공정 튜브로 유입되기 직전에 600℃ 이상의 고온 가열이 가능한 히팅존을 설치할 수도 있다.Instead of or in addition to forming the extension, a heating zone capable of high temperature heating of 600 ° C. or more may be provided immediately before flowing into the process tube.

본 발명에 따르면 소오스 가스의 예열이 충분히 효과적으로 이루어짐으로써 공정막질 및 웨이퍼의 균일성(Uniformity)이 향상되며 제조 경비가 절감되는 효과가 있다.According to the present invention, since the preheating of the source gas is sufficiently effective, uniformity of the process film and the wafer is improved, and manufacturing cost is reduced.

Description

반도체 공정 소오스 가스 공급방법 및 그 장치Semiconductor process source gas supply method and apparatus therefor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 일실시예에 따른 반도체 공정 소오스 가스 공급방법 및 장치를 보여주는 개략적인 공정도이다.2 is a schematic process diagram showing a method and apparatus for supplying a semiconductor process source gas according to an embodiment of the present invention.

Claims (8)

흡열반응을 필요로 하며 반응을 위해서 반응 가스들의 활성화가 필요한 2 이상의 소오스 가스들이 믹싱부에서 혼합되어 가스주입구를 통해 공정 튜브내로 공급되도록 구성되는 공정 소오스 가스 공급방법에 있어서, 공정 튜브내의 가스공급 라인의 단부를 프로세스 인너 튜브내로 소정 길이 만큼 연장하여 연장부를 형성함으로써 공정 튜브내의 고온의 온도 환경에서 소오스 가스가 보다 활성화되도록 하고, 믹싱부 없이 각각 단독으로 공정 튜브내로 공급되도록 한 것을 특징으로 하는 반도체 공정 소오스 가스 공급방법.A process source gas supply method comprising two or more source gases that require an endothermic reaction and require activation of reaction gases for reaction, are mixed in a mixing section and supplied into a process tube through a gas inlet, wherein the gas supply line in the process tube is provided. A semiconductor process characterized by extending the end portion of the process inner tube by a predetermined length to form an extension portion so that the source gas is more activated in a high temperature environment in the process tube, and is supplied into the process tube alone without a mixing portion. Source gas supply method. 제1항에 있어서, 상기 연장부를 형성하는 대신에 또는 부가하여 공정 튜브 직전에 600℃ 이상의 고온 가열이 가능한 히팅존을 설치하여 예열하는 것을 특징으로 하는 상기 반도체 공정 소오스 가스 공급방법.The semiconductor process source gas supply method according to claim 1, wherein a heating zone capable of high temperature heating of 600 ° C. or more is provided immediately before the process tube instead of or in addition to forming the extension portion. 제1항 또는 제2항에 있어서, 공정 튜브내로 분사되기 전에 상기 소오스 가스들이 300℃이상으로 예열되는 것을 특징으로 하는 상기 반도체 공정 소오스 가스 공급방법.3. The method of claim 1 or 2, wherein the source gases are preheated to at least 300 [deg.] C. before being injected into the process tube. 각 소오스 가스들이 공급 도관을 통해 공급되어 믹싱부에서 혼합되어 가스 인젝터를 통하여 공정 튜브내로 공급되도록 된 반도체 공정 소오스 가스 공급장치에 있어서, 상기 가스 인젝터를 프로세스 인너튜브내로 소정 길이만큼 연장하여 연장부를 형성시키며, 믹싱부를 생략하고 소오스 가스들이 별개의 인젝터를 통해 각각 직접 공정 튜브내로 공급되도록 한 것을 특징으로 한 반도체 공정 소오스 가스 공급 장치.A semiconductor process source gas supply device in which source gases are supplied through a supply conduit, mixed in a mixing section, and supplied into a process tube through a gas injector, wherein the gas injector extends by a predetermined length into the process inner tube to form an extension portion. And omitting the mixing unit so that the source gases are supplied directly into the process tube through separate injectors, respectively. 제4항에 있어서, 상기 연장부가 석영 보우트(Quartz Boat)와 프로세스 인터 튜브 사이로 상방으로 연장되어 공정 튜브 상단부에서 벤트되어 다시 하단부까지 내려오도록 구성된 것을 특징으로 하는 상기 반도체 공정 소오스 가스 공급 장치.The semiconductor process source gas supply device according to claim 4, wherein the extension part is configured to extend upward between the quartz boat and the process inter tube, bent at the upper end of the process tube, and lower back to the lower end. 제4항에 있어서, 상기 연장부가 상기 석영 보우트를 코일처럼 감도록 형성되는 것을 특징으로 하는 상기 반도체 공정 소오스 가스 공급장치.5. The semiconductor process source gas supply device according to claim 4, wherein the extension part is formed to wind the quartz boat like a coil. 제4항에 있어서, 상기 연장부를 형성하는 대신에 또는 부가하여 공정 튜브로 유입되기 직전의 소오스 가스 공급도관 주위에 600℃ 이상의 고온 가열이 가능한 히팅존을 설치하는 것을 특징으로 하는 상기 반도체 공정 소오스 가스 공급 장치.5. The semiconductor process source gas according to claim 4, wherein a heating zone capable of high temperature heating of 600 deg. C or higher is provided around the source gas supply conduit immediately before flowing into the process tube instead of or in addition to forming the extension portion. Feeding device. 제5항에 있어서, 상기 연장부의 상하 높이가 50㎝ 이상으로 되는 것을 특징으로 하는 상기 반도체 공정 소오스 가스 공급 장치.6. The semiconductor process source gas supply device according to claim 5, wherein the vertical height of the extension portion is 50 cm or more. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950029467A 1995-09-07 1995-09-07 Semiconductor process source gas supply method and apparatus therefor KR0174987B1 (en)

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KR1019950029467A KR0174987B1 (en) 1995-09-07 1995-09-07 Semiconductor process source gas supply method and apparatus therefor

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KR1019950029467A KR0174987B1 (en) 1995-09-07 1995-09-07 Semiconductor process source gas supply method and apparatus therefor

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KR0174987B1 KR0174987B1 (en) 1999-04-01

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