JP2912059B2 - Atmospheric pressure CVD equipment - Google Patents
Atmospheric pressure CVD equipmentInfo
- Publication number
- JP2912059B2 JP2912059B2 JP3214896A JP21489691A JP2912059B2 JP 2912059 B2 JP2912059 B2 JP 2912059B2 JP 3214896 A JP3214896 A JP 3214896A JP 21489691 A JP21489691 A JP 21489691A JP 2912059 B2 JP2912059 B2 JP 2912059B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- atmospheric pressure
- nozzle
- manifold
- pressure cvd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【０００１】[0001]
【産業上の利用分野】本発明は、常圧ＣＶＤ装置に関
し、特に反応部への材料ガスの供給部の構成に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an atmospheric pressure CVD apparatus and, more particularly, to a structure of a supply section of a material gas to a reaction section.
【０００２】[0002]
【従来の技術】従来の常圧ＣＶＤ装置の材料ガス供給部
は、図２に示す様に、複数の材料ガス（Ｎ2 ，Ｓｉ
Ｈ4 ，ＰＨ3 ）を各々ガス導入管１より導入し、マスフ
ローコントローラ２により、流量制御した後に、マニホ
ールド３に導入して合流し、ノズル７から混合ガス９と
して反応炉に導入するように構成されていた。この場
合、各材料ガスは、ノズル７に達する迄の間にマニホー
ルド３のみで拡散混合されていた。2. Description of the Related Art As shown in FIG. 2, a material gas supply section of a conventional atmospheric pressure CVD apparatus includes a plurality of material gases (N 2 , Si).
H 4, PH 3) respectively introduced from gas introduction pipe 1, by the mass flow controller 2, after the flow control merges introduced into manifold 3, configured to introduce into the reactor as a mixed gas 9 from the nozzle 7 It had been. In this case, each material gas was diffused and mixed only in the manifold 3 before reaching the nozzle 7.
【０００３】[0003]
【発明が解決しようとする課題】この従来の常圧ＣＶＤ
装置では、材料ガス同志の混合は、マニホールド３での
合流による拡散混合のみである為、ノズル７から噴出す
る時点で均一に混合されていない。また、スリット状の
ノズル７から噴出する材料ガスは、カーテン状のガス流
になるが、このガス流内に材料ガスの温度分布を生じる
為、成膜された膜は、その影響を受けて、膜質や膜厚の
均一性が悪くなるという問題点が有った。The conventional atmospheric pressure CVD
In the apparatus, the mixing of the material gases is only diffusion mixing by merging in the manifold 3, so that the mixing is not uniform at the time of jetting from the nozzle 7. Further, the material gas ejected from the slit-shaped nozzle 7 becomes a curtain-shaped gas flow, and a temperature distribution of the material gas is generated in the gas flow. There is a problem that the uniformity of the film quality and the film thickness is deteriorated.
【０００４】特にリン（Ｐ）やホウ素（Ｂ）を膜中にド
ーピングする場合、Ｐ又はＢ濃度のウェーハ面内均一性
が悪化し、半導体装置の品質及び歩留りを低下させると
いう問題点があった。[0004] In particular, when phosphorus (P) or boron (B) is doped into the film, there is a problem that the uniformity of the P or B concentration in the wafer surface is deteriorated, and the quality and yield of the semiconductor device are reduced. .
【０００５】[0005]
【課題を解決するための手段】本発明の常圧ＣＶＤ装置
は、複数の材料ガスを導入するガス導入管と、このガス
導入管に接続されたマニホールドと、このマニホールド
に接続された混合用のタンクと、このタンクに接続され
たノズルとを含むものであり、特にタンク内に高周波印
加用の電極を設けたものである。SUMMARY OF THE INVENTION An atmospheric pressure CVD apparatus according to the present invention comprises a gas introduction pipe for introducing a plurality of material gases, a manifold connected to the gas introduction pipe, and a mixing pipe connected to the manifold. It includes a tank and a nozzle connected to the tank, and particularly includes an electrode for applying a high frequency in the tank.
【０００６】[0006]
【作用】混合用のタンクを設けることにより材料ガスの
混合は均一になる。また、高周波が印加される材料ガス
は、分子の原子間結合が一部切り離され、一種のプラズ
マ状態となり、更に発生した熱エネルギーにより分子運
動が活発になるため、混合が促進される。By providing a mixing tank, the mixing of the material gases becomes uniform. In addition, the material gas to which the high frequency is applied partially breaks the interatomic bonds of the molecules to form a kind of plasma state, and furthermore, the generated thermal energy activates the molecular motion, so that the mixing is promoted.
【０００７】[0007]
【実施例】次に本発明について図面を参照して説明す
る。図１は本発明の一実施例の構成図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings. FIG. 1 is a configuration diagram of one embodiment of the present invention.
【０００８】図１を参照すると、複数のガス導入管１は
マスフローコントローラ２を介してマニホールド３に接
続しており、このマニホールド３はガス混合用のタンク
５に接続されている。そしてこのタンク５はノズル７に
接続されている。以下材料ガスの流れと共に更に説明す
る。Referring to FIG. 1, a plurality of gas introduction pipes 1 are connected to a manifold 3 via a mass flow controller 2, and the manifold 3 is connected to a gas mixing tank 5. The tank 5 is connected to a nozzle 7. This will be further described below with the flow of the material gas.
【０００９】成膜の為の材料ガス（Ｎ2 ，ＳｉＨ4 ，Ｐ
Ｈ3 ）は、ガス導入管１より導入され、マスフローコン
トローラ２により各々の流量が制御され、マニホールド
３において合流し予め混合される。予め混合された材料
ガスは、混合用のタンク５内に入り、更に拡散混合が促
進され均一となる。Material gases (N 2 , SiH 4 , P
H 3 ) is introduced from the gas introduction pipe 1, the respective flow rates are controlled by the mass flow controller 2, and the H 3 ) is merged and mixed in the manifold 3 in advance. The premixed material gas enters the mixing tank 5, where diffusion mixing is further promoted and becomes uniform.
【００１０】そして特に、このタンク５の内部には、電
極６Ａ，６Ｂが設けられ、これらの電極には高周波発振
装置８により高周波が印加されるように構成されてい
る。この高周波により、電極６Ａ，６Ｂ間に存在する材
料ガスは、プラズマ状態となり、予め混合された状態か
ら更に混合され反応炉内のノズル７に送られる。In particular, inside the tank 5, electrodes 6A and 6B are provided, and a high frequency oscillator 8 applies a high frequency to these electrodes. Due to this high frequency, the material gas existing between the electrodes 6A and 6B becomes a plasma state, and is further mixed from a pre-mixed state and sent to the nozzle 7 in the reaction furnace.
【００１１】また、タンク５からマニホールド３及びノ
ズル７に高周波が大量に漏洩する事を防止する為に、ア
イソレーター４を設けて電気的に絶縁している。一方、
ノズル７にはＯ2 ガスも送られるが、その噴出口は混合
ガスの噴出口の近くに設けられており、ノズル７内では
材料ガス（ＳｉＨ4 ，ＰＨ3 ，Ｎ2 ）とＯ2 ガスは混合
しない。Further, in order to prevent a large amount of high frequency leakage from the tank 5 to the manifold 3 and the nozzle 7, an isolator 4 is provided for electrical insulation. on the other hand,
O 2 gas is also sent to the nozzle 7, and the jet port is provided near the jet port of the mixed gas. In the nozzle 7, the material gas (SiH 4 , PH 3 , N 2 ) and the O 2 gas are Do not mix.
【００１２】[0012]
【発明の効果】以上説明したように本発明は、常圧ＣＶ
Ｄ装置のマニホールドとノズルの間に材料ガス混合用の
タンクを設けることにより、材料ガスをより均一に混合
することができる。更にタンク内に高周波印加用の電極
を設け、混合ガスに高周波を印加する事により、更に均
一に混合した材料ガスを反応部に供給する事が可能にな
る。As described above, the present invention provides a normal pressure CV
By providing a material gas mixing tank between the manifold and the nozzle of the D apparatus, the material gas can be more uniformly mixed. Further, by providing an electrode for applying a high frequency in the tank and applying a high frequency to the mixed gas, it is possible to supply a more uniformly mixed material gas to the reaction section.
【００１３】その結果、反応部のノズルから噴出するカ
ーテン状のガス流内に、材料ガスの濃度分布が生じるこ
とがない為、成膜される膜は、膜質、膜厚の均一性が向
上する。特にＰやＢを膜中にドーピングする場合、Ｐ又
はＢ濃度のウェーハ面内の均一性が良くなるため、半導
体装置の信頼性及び歩留りが向上するという効果を有す
る。As a result, since the concentration distribution of the material gas does not occur in the curtain-shaped gas flow ejected from the nozzle of the reaction section, the film to be formed has improved film quality and uniformity of film thickness. . In particular, in the case where P or B is doped into the film, the uniformity of the P or B concentration in the wafer surface is improved, which has the effect of improving the reliability and yield of the semiconductor device.
【図１】本発明の一実施例の構成図。FIG. 1 is a configuration diagram of an embodiment of the present invention.
【図２】従来の常圧ＣＶＤ装置の材料ガス導入部の構成
図。FIG. 2 is a configuration diagram of a material gas introduction unit of a conventional atmospheric pressure CVD apparatus.
１ ガス導入管 ２ マスフローコントローラ ３ マニホールド ４ アイソレーター ５ タンク ６Ａ，６Ｂ 電極 ７ ノズル ８ 高周波発振装置 ９ 混合ガス DESCRIPTION OF SYMBOLS 1 Gas introduction pipe 2 Mass flow controller 3 Manifold 4 Isolator 5 Tank 6A, 6B Electrode 7 Nozzle 8 High frequency oscillator 9 Mixed gas
Claims (1)
と、このガス導入管に接続されたマニホールドと、この
マニホールドに接続され高周波電圧印加用の電極が設け
られている混合用のタンクと、このタンクに接続された
ノズルとを含むことを特徴とする常圧ＣＶＤ装置。1. A gas introduction pipe for introducing a plurality of material gases, a manifold connected to the gas introduction pipe, and an electrode for applying a high-frequency voltage connected to the manifold.
And a nozzle connected to the tank for mixing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3214896A JP2912059B2 (en) | 1991-08-27 | 1991-08-27 | Atmospheric pressure CVD equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3214896A JP2912059B2 (en) | 1991-08-27 | 1991-08-27 | Atmospheric pressure CVD equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0551747A JPH0551747A (en) | 1993-03-02 |
| JP2912059B2 true JP2912059B2 (en) | 1999-06-28 |
Family
ID=16663358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3214896A Expired - Fee Related JP2912059B2 (en) | 1991-08-27 | 1991-08-27 | Atmospheric pressure CVD equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2912059B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004081986A2 (en) * | 2003-03-12 | 2004-09-23 | Asm America Inc. | Method to planarize and reduce defect density of silicon germanium |
| JP4506677B2 (en) * | 2005-03-11 | 2010-07-21 | 東京エレクトロン株式会社 | Film forming method, film forming apparatus, and storage medium |
| WO2023175740A1 (en) * | 2022-03-15 | 2023-09-21 | 株式会社Kokusai Electric | A substrate processing device, a substrate processing method, a semiconductor device manufacturing method, a program, and a gas supply unit |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3011057U (en) * | 1994-11-10 | 1995-05-16 | 平湘 何 | Pen type survey instrument detection device |
| JP3078061U (en) * | 2000-12-01 | 2001-06-22 | ティーディーケイ株式会社 | Storage case |
-
1991
- 1991-08-27 JP JP3214896A patent/JP2912059B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0551747A (en) | 1993-03-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19990309 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
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|
| LAPS | Cancellation because of no payment of annual fees |