KR970018748A - Method of manufacturing ferroelectric capacitor - Google Patents
Method of manufacturing ferroelectric capacitor Download PDFInfo
- Publication number
- KR970018748A KR970018748A KR1019950032982A KR19950032982A KR970018748A KR 970018748 A KR970018748 A KR 970018748A KR 1019950032982 A KR1019950032982 A KR 1019950032982A KR 19950032982 A KR19950032982 A KR 19950032982A KR 970018748 A KR970018748 A KR 970018748A
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- electrode
- interlayer insulating
- insulating layer
- ferroelectric
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 4
- 239000010410 layer Substances 0.000 claims abstract 15
- 239000011229 interlayer Substances 0.000 claims abstract 9
- 238000005530 etching Methods 0.000 claims abstract 6
- 239000004065 semiconductor Substances 0.000 claims abstract 6
- 239000000758 substrate Substances 0.000 claims abstract 6
- 229910052751 metal Inorganic materials 0.000 claims abstract 2
- 239000002184 metal Substances 0.000 claims abstract 2
- 238000000059 patterning Methods 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- -1 Bi3Ti4012 Inorganic materials 0.000 claims 1
- 229910003781 PbTiO3 Inorganic materials 0.000 claims 1
- 229910019899 RuO Inorganic materials 0.000 claims 1
- 229910002113 barium titanate Inorganic materials 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 230000010354 integration Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Semiconductor Memories (AREA)
Abstract
강유전체 커패시터의 제조방법에 대해 기재되어 있다. 이는, 반도체기판에 트랜지스터를 형성하는 제1 단계, 트랜지스터가 형성되어 있는 반도체기판 전면에 층간절연층을 형성하는 제2 단계, 트랜지스터의 소오스 및 드레인 영역을 노출시키기 위한 패턴층을 층간절연층 상에 형성하는 제3 단계, 패턴층을 마스크로 하여 층간절연층을 두께 일부를 등방성식각하는 제4 단계, 패턴층을 마스크로 하여 등방성식각 후 남아 있는 층간절연층을 이방성식각함으로써 소오스 및 드레인을 각각 노출시키는 제1 및 제2 홀을 형성하는 제5 단계, 홀들이 형성되어 있는 반도체기판 전면에 제1 전극, 강유전체 및 제2 전극을 차례대로 적층하는 제6 단계, 제1전극, 강유전체 및 제2전극을 패터닝함으로써 제1 홀 내에만 커패시터를 형성하는 제7 단계 및 금속배선을 형성하는 제8 단계를 포함하는 것을 특징으로 한다. 따라서, 셀 정전용량 및 집적도가 종래 보다 큰 강유전체 커패시터를 얻을 수 있다.A method of making a ferroelectric capacitor is described. This includes a first step of forming a transistor on a semiconductor substrate, a second step of forming an interlayer insulating layer on the entire surface of the semiconductor substrate on which the transistor is formed, and a pattern layer for exposing the source and drain regions of the transistor on the interlayer insulating layer. The third step of forming, the fourth step of isotropically etching the interlayer insulating layer with a pattern layer as a mask, the fourth step, anisotropically etching the remaining interlayer insulating layer after the isotropic etching using the pattern layer as a mask to expose the source and drain, respectively A fifth step of forming the first and second holes to be made; a sixth step of sequentially stacking the first electrode, the ferroelectric, and the second electrode on the entire surface of the semiconductor substrate on which the holes are formed; the first electrode, the ferroelectric, and the second electrode And a seventh step of forming a capacitor only in the first hole by patterning and an eighth step of forming a metal wiring. Therefore, a ferroelectric capacitor having a higher cell capacitance and a higher degree of integration can be obtained.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2A도 내지 제2D도는 본 발명의 일 방법에 의한 강유전체 커패시터의 제조방법을 설명하기 위해 도시한 단면도들이다.2A to 2D are cross-sectional views illustrating a method of manufacturing a ferroelectric capacitor according to one method of the present invention.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950032982A KR970018748A (en) | 1995-09-29 | 1995-09-29 | Method of manufacturing ferroelectric capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950032982A KR970018748A (en) | 1995-09-29 | 1995-09-29 | Method of manufacturing ferroelectric capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR970018748A true KR970018748A (en) | 1997-04-30 |
Family
ID=66616039
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950032982A KR970018748A (en) | 1995-09-29 | 1995-09-29 | Method of manufacturing ferroelectric capacitor |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR970018748A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100602289B1 (en) * | 1998-02-16 | 2006-07-14 | 지멘스 악티엔게젤샤프트 | Circuit with at least one capacitor and process for producing the same |
-
1995
- 1995-09-29 KR KR1019950032982A patent/KR970018748A/en not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100602289B1 (en) * | 1998-02-16 | 2006-07-14 | 지멘스 악티엔게젤샤프트 | Circuit with at least one capacitor and process for producing the same |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |